160 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB
160 W, 单向, 2 组成, 硅, 瞬态抑制二极管, TO-236AB
| 参数名称 | 属性值 |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | NXP(恩智浦) |
| 零件包装代码 | SOT-23 |
| 包装说明 | PLASTIC PACKAGE-3 |
| 针数 | 3 |
| Reach Compliance Code | compli |
| ECCN代码 | EAR99 |
| 最大击穿电压 | 18.4 V |
| 最小击穿电压 | 17.6 V |
| 击穿电压标称值 | 18 V |
| 配置 | COMMON CATHODE, 2 ELEMENTS |
| 二极管元件材料 | SILICON |
| 二极管类型 | TRANS VOLTAGE SUPPRESSOR DIODE |
| JEDEC-95代码 | TO-236AB |
| JESD-30 代码 | R-PDSO-G3 |
| JESD-609代码 | e3 |
| 湿度敏感等级 | 1 |
| 最大非重复峰值反向功率耗散 | 160 W |
| 元件数量 | 2 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 260 |
| 极性 | UNIDIRECTIONAL |
| 认证状态 | Not Qualified |
| 最大重复峰值反向电压 | 15 V |
| 表面贴装 | YES |
| 技术 | AVALANCHE |
| 端子面层 | Tin (Sn) |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | 30 |
| PESD15VS2UAT | PESD12VS2UAT | PESD3V3S2UAT | PESD5V0S2UAT | PESDXS2UAT | PESD24VS2UAT | |
|---|---|---|---|---|---|---|
| 描述 | 160 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB | 160 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB | 160 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB | 160 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB | Double ESD protection diodes in SOT23 package | 160 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB |
| 是否无铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 | - | 不含铅 |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | - | 符合 |
| 厂商名称 | NXP(恩智浦) | NXP(恩智浦) | - | NXP(恩智浦) | - | NXP(恩智浦) |
| 零件包装代码 | SOT-23 | SOT-23 | SOT-23 | SOT-23 | - | SOT-23 |
| 包装说明 | PLASTIC PACKAGE-3 | PLASTIC PACKAGE-3 | PLASTIC PACKAGE-3 | PLASTIC PACKAGE-3 | - | PLASTIC PACKAGE-3 |
| 针数 | 3 | 3 | 3 | 3 | - | 3 |
| Reach Compliance Code | compli | unknow | compli | compli | - | compli |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | - | EAR99 |
| 最大击穿电压 | 18.4 V | 15.3 V | 6 V | 7.2 V | - | 27.5 V |
| 最小击穿电压 | 17.6 V | 14.7 V | 5.2 V | 6.4 V | - | 26.5 V |
| 击穿电压标称值 | 18 V | 15 V | 5.6 V | 6.8 V | - | 27 V |
| 配置 | COMMON CATHODE, 2 ELEMENTS | COMMON CATHODE, 2 ELEMENTS | COMMON CATHODE, 2 ELEMENTS | COMMON CATHODE, 2 ELEMENTS | - | COMMON CATHODE, 2 ELEMENTS |
| 二极管元件材料 | SILICON | SILICON | SILICON | SILICON | - | SILICON |
| 二极管类型 | TRANS VOLTAGE SUPPRESSOR DIODE | TRANS VOLTAGE SUPPRESSOR DIODE | TRANS VOLTAGE SUPPRESSOR DIODE | TRANS VOLTAGE SUPPRESSOR DIODE | - | TRANS VOLTAGE SUPPRESSOR DIODE |
| JEDEC-95代码 | TO-236AB | TO-236AB | TO-236AB | TO-236AB | - | TO-236AB |
| JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | - | R-PDSO-G3 |
| JESD-609代码 | e3 | e3 | e3 | e3 | - | e3 |
| 湿度敏感等级 | 1 | 1 | 1 | 1 | - | 1 |
| 最大非重复峰值反向功率耗散 | 160 W | 180 W | 330 W | 260 W | - | 160 W |
| 元件数量 | 2 | 2 | 2 | 2 | - | 2 |
| 端子数量 | 3 | 3 | 3 | 3 | - | 3 |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | - | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | - | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 260 | 260 | 260 | 260 | - | 260 |
| 极性 | UNIDIRECTIONAL | UNIDIRECTIONAL | UNIDIRECTIONAL | UNIDIRECTIONAL | - | UNIDIRECTIONAL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified |
| 最大重复峰值反向电压 | 15 V | 12 V | 3.3 V | 5 V | - | 24 V |
| 表面贴装 | YES | YES | YES | YES | - | YES |
| 技术 | AVALANCHE | AVALANCHE | AVALANCHE | AVALANCHE | - | AVALANCHE |
| 端子面层 | Tin (Sn) | Tin (Sn) | Tin (Sn) | Tin (Sn) | - | Tin (Sn) |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | - | GULL WING |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | - | DUAL |
| 处于峰值回流温度下的最长时间 | 30 | 30 | 30 | 30 | - | 30 |
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嵌入式系统
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NXP MCU
FPGA/CPLD
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