MMBT2222A-AU
NPN GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE
FEATURES
• NPN epitaxial silicon, planar design
• Collector-emitter voltage VCE = 40V
• Collector current IC = 600mA
• Acqire quality system certificate : TS16949
•
AEC-Q101 qualified
•
Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.056(1.40)
0.047(1.20)
0.120(3.04)
0.110(2.80)
40 Volts
POWER
225 mWatts
0.079(2.00)
0.008(0.20)
0.003(0.08)
MECHANICAL DATA
• Case: SOT-23, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.0003 ounces, 0.0084 grams
• Marking: M2A
0.070(1.80)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.013(0.35)
0.044(1.10)
0.035(0.90)
ABSOLUTE RATINGS
PARAMETER
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
40
75
6.0
600
Units
V
V
V
mA
THERMAL CHARACTERISTICS
PARAMETER
Max Power Dissipation (Note 1)
Thermal Resistance , Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
P
TOT
R
θJA
T
J
T
STG
Value
225
556
-55 to 150
-55 to 150
Units
mW
O
C/W
O
C
C
O
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
January 05,2011-REV.00
PAGE . 1
MMBT2222A-AU
PA RA M E TE R
C o lle c to r - E m i tte r B re a k d o wn Vo lta g e
C o lle c to r - B a s e B re a k d o wn Vo lta g e
E m i tte r - B a s e B re a k d o wn Vo lta g e
B a s e C uto ff C ur re nt
S ym b o l
V
( B R)
C E O
V
( B R)
C B O
V
( B R)
E B O
I
B L
I
C E X
C o lle c to r C uto ff C urre nt
I
C B O
E m i tte r C uto ff C urr e nt
I
E B O
Te s t C o nd i ti o n
IC = 1 .0 mA , IB = 0
IC = 1 0 uA , IE = 0
IE =1 0 uA , IC = 0
V C E = 6 0 V, V E B = 3 .0 V
V C E = 6 0 V, V E B = 3 .0 V
V C E = 6 0 V, IE = 0 ,
V C E = 6 0 V, IE = 0 ,TJ = 1 2 5
O
C
V E B = 3 .0 V, IC =0 ,
IC = 0 . 1 mA , V C E = 1 0 V
IC = 1 . 0 mA , V C E = 1 0 V
IC = 1 0 m A , V C E = 1 0 V
IC = 1 0 m A , V C E = 1 0 V,TJ = 1 2 5
O
C
IC = 1 5 0 mA , V C E = 1 0 V (No te 2 )
IC = 1 5 0 mA , V C E = 1 V ( No te 2 )
IC = 5 0 0 mA , V C E = 1 0 V ( No te 2 )
IC = 1 5 0 mA , IB = 1 5 m A
IC = 5 0 0 mA , IB = 5 0 m A
IC = 1 5 0 mA , IB = 1 5 m A
IC = 5 0 0 mA , IB = 5 0 m A
V C B = 1 0 V, IE = 0 , f= 1 M Hz
V C B = 0 .5 V, IC = 0 , f= 1 MHz
V C C = 3 V,V B E = - 5 V,
IC = 1 5 0 mA ,IB = 1 5 mA
V C C = 3 V,V B E = - 5 V,
IC = 1 5 0 mA ,IB = 1 5 mA
V C C = 3 0 V,IC = 1 5 0 mA
IB 1 = IB 2 = 1 5 mA
V C C = 3 0 V,IC = 1 5 0 mA
IB 1 = IB 2 = 1 5 mA
M IN.
40
75
6 .0
-
-
-
-
35
50
75
35
100
50
40
-
0 .6
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MA X .
-
-
-
20
10
10
10
100
-
-
-
-
300
-
-
0 .3
1 .0
1 .2
2 .0
8 .0
25
10
25
225
60
Uni ts
V
V
V
nA
nA
nA
μA
nA
D C C ur re nt Ga i n
h
FE
-
C o lle c to r - E m i tte r S a tur a ti o n Vo lta g e
( No te 2 )
B a s e - E mi tte r S a tura ti o n Vo lta g e
( No te 2 )
C o lle c to r - B a s e C a p a c i ta nc e
E m i tte r - B a s e C a p a c i ta nc e
D e la y Ti me
Ri s e Ti me
S to ra g e Ti m e
F a ll Ti m e
V
C E ( S AT)
V
B E ( S AT)
C
CBO
C
EBO
td
tr
ts
tf
V
V
pF
pF
ns
ns
ns
ns
Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30V
200
W
+ 16V
1.0 to 100us
Duty Cycle ~ 2.0%
1K
W
< 20ns
1N914
C S * < 10pF
+30V
+ 1 6V
0
1.0 to 1 00u s
D uty C ycle ~ 2.0%
200
W
-2 V
< 2ns
1K
W
C S* < 1 0 p F
0
-14 V
Scope rise time < 4ns
-4V
* To t a l s h u n t c a p a c i t a n c e o f t e s t j i g , c o n n e c t o r s , a n d o s c i l l o s c o p e
Fig. 1 Turn-On Time
F i g . 2 T u r n - O ff T i m e
January 05,2011-REV.00
PAGE . 2
NXP MCU
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