GaAlAs T-1 Standard 3
Infrared Emitting Diode
LTE-4206/LTE-4206C/LTE-4216/LTE-4216C
Features
Selected to specific on-line intensity and radiant inten-
sity ranges.
Low cost plastic end looking package.
Mechanically and spectrally matched to the LTR-4206
series of phototransistor.
The LTE-4206 series are made with Gallium Aluminum
Arsenide window layer on Gallium Arsenide infrared
emitting diodes.
Package Dimensions
Description
The LTE-4206 series are high intensity Gallium Aluminum
Arsenide infrared emitting diodes mounted in clear plas-
tic end looking packages. The LTE-4206 series provides
a broad range of intensity selection. Suffix C-smoke
color lens.
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is 0.25mm (.010") unless otherwise noted.
3. Protruded resin under flange is 1.5mm (.059") max.
4. Lead spacing is measured where the leads emerge from
the package.
5. Specifications are subject to change without notice.
Absolute Maximum Ratings at Ta=25
Parameter
Power Dissipation
Peak forward Current (300pps, 10
Continuous Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
[1.6mm (.063 in.) from body]
s pulse)
Maximum Rating
90
1
60
5
-40
-55
260
to +85
to +100
for 5 Seconds
Unit
mW
A
mA
V
Electrical Optical Characteristics at Ta=25
Parameter
*Aperture Radiant Incidence
Radiant Intensity
Peak Emission Wavelength
Spectral Line Half-Width
Forward Voltage
Reverse Current
View Angle (See Fig.6)
2
VF
IR
1/2
20
2
Symbol
Ee
Ie
Peak
Min.
0.3
2.25
Typ.
0.7
5.26
940
50
1.2
Max.
Unit
mW/cm
2
mW/sr
nm
nm
Test
Condition
I
F
=20mA
I
F
=20mA
I
F
=20mA
I
F
=20mA
I
F
=20mA
V
R
=5V
1.6
100
V
A
deg
10-10
Note: *Ee is a measurement of the average radiant incidence upon a sensing area 1cm in perpendicular to and
centered on the mechanical axis of the lens and 26.8mm from lens.
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