BG300B12LY2R-I
BYD Microelectronics Co., Ltd.
IGBT Power Module
V
CE
=1200V
I
C
=300A
General Description
BYD IGBT Power Module BG300B12LY2R-I provides low
switching loss as well as high short circuit capability, which
introduce the advanced IGBT chip/FWD and improved
connection, it is able to take on a perfect performance in
various applications up to 20KHz.
Features
Half-bridge
Low inductance
Standard package
High short circuit capability
Ultra low conduction and switching loss
Including ultra fast & soft recovery anti-parallel FWD
Applications
AC motor control
Inverters
Servo
UPS (Uninterruptible Power Supplies)
Electric welding
Characteristic values
Parameter
Collector-emitter voltage
Continuous collector current
Peak collector current
Gate-emitter voltage
Total power dissipation
IGBT short circuit SOA
Junction temperature
Storage temperature range
Diode DC forward current
Peak forward current
I
2
t-value, Diode
Isolation voltage
Datasheet
Symbol
Conditions
Temperature
Value
Unit
Absolute Maximum Ratings
V
CES
I
C
I
CRM
V
GES
P
tot
t
psc
T
vj
T
stg
I
F
I
FRM
I
2
t
V
isol
V
GE
=0V
—
I
CRM
=2I
C
—
per switch (IGBT)
V
CC
=900V, V
GE
≤15V
V
CEM
≤1200V
—
—
—
I
FRM
=2I
F
V
R
=0V,t=10ms
t=1min,f=50Hz
T
vj
=25℃
T
c
=80℃
T
c
=80℃
—
T
c
= 25 °C
T
vj
≤125℃
—
—
T
c
=80℃
—
T
j
=125℃
—
1200
300
600
+/-20
1500
10
-40~150
-40~125
300
600
—
2500
V
A
A
V
W
us
℃
℃
A
A
kA
2
s
V
Page 1 of 9
TS-PDM-PD-0071 Rev.A/1
BYD Microelectronics Co., Ltd.
BG300B12LY2R-I
Parameter
IGBT
Gate-emitter threshold voltage
Collector-emitter cut-off current
Gate-emitter cut-off current
Collector-emitter
saturation voltage
Integrated gate resistor
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Symbol
Conditions
Temperature
Value
Unit
Characteristics
min.
V
GE(th)
I
CES
I
GES
V
CE(sat)
R
Gint
C
ies
C
oes
C
res
t
d(on)
V
CC
=600V,Ic=300A,
R
Gon
=R
Goff=
15Ω,
V
GE
=±15V,
Turn-off delay time
t
d(off)
Lσ=80nH,
Inductive load
T
vj
=25℃
T
vj
=125℃
T
vj
=25℃
T
vj
=125℃
T
vj
=25℃
T
vj
=125℃
T
vj
=25℃
T
vj
=125℃
V
CC
=600V, Ic=300A,
Energy dissipation during turn-on
time
E
on
R
GON
=15Ω,
V
GE
=+15V, L
σ
=80nH,
inductive load
V
CC
=600V,Ic=300A,
Energy dissipation during turn-off
time
E
off
R
Goff
=15Ω,V
GE
=-15V
Lσ=80nH,
Inductive load
T
vj
=25℃
T
vj
=125℃
T
vj
=25℃
T
vj
=125℃
V
CE
=25V,V
GE
=0V,
f=1MHz
T
vj
=25℃
V
GE
=V
CE
V
CE
=1200V,V
GE
=0V
V
CE
=0V,V
GE
=±20V,
Ic=300A,V
GE
=15V
—
T
vj
=25℃
T
vj
=25℃
T
vj
=125℃
T
vj
=25℃
T
vj
=25℃
T
vj
=125℃
T
vj
=25℃
5.0
—
—
-400
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
typ.
5.8
—
—
—
2.0
2.2
2.5
18.6
1.16
1.02
920
1000
200
230
1050
1280
100
110
80
98
34
38
max.
6.5
0.2
—
400
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V
mA
mA
nA
V
V
Ω
nF
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
Rise time
t
r
Fall time
t
f
Diode
Forward voltage
Peak reverse recovery current
Recovered charge
Reverse recovery time
Reverse recovery energy
Datasheet
min.
V
F
I
RR
Q
rr
t
rr
E
rec
I
F
=300A,V
R
=600V,
di
F
/dt=1200A/us
I
F
=300A
T
vj
=25℃
T
vj
=125
℃
T
vj
=125℃
T
vj
=125℃
T
vj
=125℃
T
vj
=125℃
TS-PDM-PD-0071 Rev.A/1
typ.
1.7
1.7
150
44
640
12
max.
—
—
—
—
—
—
V
V
A
uC
ns
mJ
—
—
—
—
—
—
Page 2 of 9
BYD Microelectronics Co., Ltd.
BG300B12LY2R-I
Parameter
Symbol
Conditions
min.
typ.
max
.
Unit
Thermal-Mechanical Specifications
IGBT thermal resistance
junction to case
Diode thermal resistance junction to
case
Thermal resistance case to
heat-sink
Dimensions
R
th(j-c)
R
th(j-c)
per IGBT
per diode
—
—
0.10
0.12
—
—
K/W
K/W
R
th(c-s)
per module
—
0.03
—
K/W
LxWxH
Typical , see outline drawing
according to IEC
Term. to base:
Term. to term:
Term. to base:
Term. to term:
—
106.4×61.4×31.5
—
—
—
—
—
28.3
6.0
24
14
320
—
—
—
—
—
mm
Clearance distance in air
da
60664-1 and EN
50124-1
according to IEC
mm
Surface creepage distance
Mass
ds
m
60664-1and EN
50124-1
—
mm
g
Thermal and mechanical properties according to IEC 60747 – 15
Electrical characteristics according to IEC 60747 – 9
Specification according to the valid application note
.
Datasheet
TS-PDM-PD-0071 Rev.A/1
Page 3 of 9
BYD Microelectronics Co., Ltd.
BG300B12LY2R-I
Characterization curves
640
V
GE
=15V
480
640
V
CE
=20V
480
T
vj
=25
℃
I
C
[A]
320
I
C
[A]
T
vj
=125
℃
320
T
vj
=125
℃
160
160
T
vj
=25
℃
0
0
1
2
3
4
5
0
2
5
8
11
14
V
CE
[V]
Fig.1 Typ. On-state Characteristics
V
GE
[V]
Fig.2 Typ. Transfer Characteristics
600
320
T
vj
=125℃
480
V
GE
=17V
V
GE
=15V
240
V
cc
=600V
‐‐‐Tvj=125
℃
V
GE
=15V —Tvj=25
℃
R
G
=15Ω
L=80nH
E
on
E
on
I
C
[A]
V
GE
=13V
240
E[mj]
360
V
GE
=11V
160
E
off
120
V
GE
=9V
80
E
off
0
0
1
2
3
4
0
0
160
320
480
640
V
CE
[V]
Fig.3 Typ. Output Characteristics
I
C
[A]
Fig.4 Switching Loss vs. Collector Current
Datasheet
TS-PDM-PD-0071 Rev.A/1
Page 4 of 9
BYD Microelectronics Co., Ltd.
BG300B12LY2R-I
320
240
I
RR
[A],E
rec
[mJ],Q
rr
[uC
V
CC
=600V
I
C
=300A
V
GE
=15V
T
vj
=125
℃
7.6
160
R
G
[Ω]=3.3
120
V
CC
=600V
I
C
=300A
V
GE
=15V
T
vj
=125
℃
E
on
160
15
20
E[mj]
I
RR
80
80
Q
rr
E
rec
E
off
40
E
rec
0
700
1000
1300
1600
1900
0
0
6
12
18
24
di/dt[A/us]
R
G
[Ω]
Fig.6 Switching Loss vs. Gate Resistor
Fig.5 Typ. Reverse Recovery Characteristics
10000
V
cc
=600V
V
GE
=15V
R
G
=15Ω
T
vj
=125℃
10000
1000
t
doff
t
don
t
r
t
f
V
CC
=600V
I
C
=300A
V
GE
=15V
T
vj
=125
℃
1000
t[ns]
t[ns]
t
doff
t
don
t
r
100
100
t
f
10
0
200
400
600
10
0
6
12
18
24
I
C
[A]
Fig.7 Typ. Switching Times vs. I
c
R
G
[Ω]
Fig.8 Typ. Switching Times vs. Gate Resistor
Datasheet
TS-PDM-PD-0071 Rev.A/1
Page 5 of 9
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