BG100B06LX2R-I
BYD Microelectronics Co., Ltd.
IGBT Power Module
V
CE
=600V
I
C
=100A
General Description
BYD IGBT Power Module BG100B06LX2R-I provides low
switching loss as well as high short circuit capability, which
introduce the advanced IGBT chip/FWD and improved
connection, it is able to take on a perfect performance in
various applications up to 20KHz.
Features
Half-bridge
Low inductance
Standard package
High short circuit capability
Ultra low conduction and switching loss
Including ultra fast & soft recovery anti-parallel FWD
Applications
AC motor control
Inverters
Servo
UPS (Uninterruptible Power Supplies)
Electric welding
Characteristic values
Parameter
Collector-emitter voltage
Continuous collector current
Peak collector current
Gate-emitter voltage
Total power dissipation
IGBT short circuit SOA
Junction temperature
Storage temperature range
Diode DC forward current
Peak forward current
Surge current
Isolation voltage
Datasheet
W
Symbol
Conditions
Temperature
Value
Unit
Absolute Maximum Ratings
V
CES
I
C
I
CM
V
GES
P
tot
t
psc
T
vj
T
stg
I
F
I
FRM
I
FSM
V
isol
V
GE
=0V
—
t
p
=1ms
—
per switch (IGBT)
V
CC
=300V,V
CEM
≤600V
V
GE
≤15V
—
—
—
I
FRM
=2I
F
T
p
=10ms,sin180°
t=1min,f=50Hz
I-D06-J -0059 Rev.A/0
T
vj
=25℃
T
c
=80℃
T
c
=80℃
—
T
c
= 25 °C
T
vj
≤125℃
—
—
—
—
T
j
=25℃
—
600
100
200
+/-20
380
10
-40~150
-40~125
100
200
—
2500
V
A
A
V
W
us
℃
℃
A
A
A
V
Page 1 of 9
BYD Microelectronics Co., Ltd.
BG100B06LX2R-I
Parameter
IGBT
Gate-emitter threshold voltage
Collector-emitter cut-off current
Gate-emitter cut-off current
Collector-emitter
saturation voltage
Integrated gate resistor
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Symbol
Conditions
Temperature
Value
Unit
Characteristics
min.
V
GE(th)
I
CES
I
GES
V
CE(sat)
R
Gint
C
ies
C
oes
C
res
t
d(on)
V
CC
=300V,Ic=100A,
Rise time
t
r
R
Gon
=R
Goff=
1.75Ω,
V
GE
=±15V,
Lσ=80nH,
Turn-off delay time
t
d(off)
Inductive load
T
vj
=25℃
T
vj
=125℃
T
vj
=25℃
T
vj
=125℃
T
vj
=25℃
T
vj
=125℃
T
vj
=25℃
T
vj
=125℃
V
CC
=300V, Ic=100A,
E
on
R
GON
=1.75Ω,
V
GE
=±15V, L
σ
=80nH,
V
CC
=300V,Ic=100A,
Energy dissipation during turn-off
time
E
off
R
Goff
=1.75Ω,V
GE
=±15V
Lσ=80nH,
Inductive load
T
vj
=125℃
T
vj
=25℃
T
vj
=125℃
—
—
—
0.8
2.5
3.0
—
—
—
mJ
mJ
mJ
T
vj
=25℃
V
CE
=25V,V
GE
=0V,
f=1MHz
T
vj
=25℃
V
GE
=V
CE
V
CE
=600V,V
GE
=0V
V
CE
=0V，V
GE
=20V
Ic=100A,V
GE
=15V
—
T
vj
=25℃
T
vj
=25℃
T
vj
=125℃
T
vj
=25℃
T
vj
=25℃
T
vj
=125℃
T
vj
=25℃
5.0
—
—
-300
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
typ.
5.7
—
—
—
1.5
1.6
2
6.16
0.38
0.18
210
216
50
53
250
260
135
160
0.5
max.
6.5
0.2
—
300
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V
mA
mA
nA
V
V
Ω
nF
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
Fall time
t
f
Energy dissipation during turn-on
time
Diode
Forward voltage
Peak reverse recovery current
Recovered charge
Reverse recovery time
Reverse recovery energy
Datasheet
min.
V
F
I
RR
Q
rr
t
rr
E
rec
W
I-D06-J -0059 Rev.A/0
typ.
1.53
1.50
72
6.5
160
1.8
max.
—
—
—
—
—
—
V
V
A
uC
ns
mJ
I
F
=100A
T
vj
=25℃
T
vj
=125
℃
T
vj
=125℃
—
—
—
—
—
—
I
F
=100A,V
R
=300V,
di
F
/dt=2000A/us
T
vj
=125℃
T
vj
=125℃
T
vj
=125℃
Page 2 of 9
BYD Microelectronics Co., Ltd.
BG100B06LX2R-I
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
Thermal-Mechanical Specifications
IGBT thermal resistance
junction to case
Diode thermal resistance
junction to case
Thermal resistance case to
heat-sink
Dimensions
R
th(j-c)
R
th(j-c)
per IGBT
per diode
—
—
—
—
0.4
0.7
K/W
K/W
R
th(c-s)
per module
—
0.05
—
K/W
LxWxH
Typical , see outline drawing
according to IEC
Term. to base:
Term. to term:
Term. to base:
Term. to term:
—
—
4.5
—
—
—
94×34×30.5
—
—
20
10
160
28.0
—
—
—
—
mm
Clearance distance in air
da
60664-1 and EN
50124-1
according to IEC
mm
Surface creepage distance
Mass
ds
m
60664-1and EN
50124-1
—
mm
g
Thermal and mechanical properties according to IEC 60747 – 15
Specification according to the valid application note
.
Datasheet
W
I-D06-J -0059 Rev.A/0
Page 3 of 9
BYD Microelectronics Co., Ltd.
BG100B06LX2R-I
Characterization curves
200
200
V
GE
=15V
T
vj
=25
℃
T
vj
=125
℃
I
C
[A]
100
160
V
CE
=20V
t
p
=10us
T
vj
=125
℃
T
vj
=25
℃
T
vj
=125
℃
150
I
C
[A]
4
120
80
50
40
0
0
1
2
3
0
V
CE
[V]
0
2
4
6
8
10
12
14
V
GE
[V]
Fig.1 Typ. On-state Characteristics
Fig.2 Typ. Transfer Characteristics
200
8
T
vj
=125℃
V
GE
=17V
150
V
cc
=300V
V
GE
=15V
R
G
=1.75Ω
L=80nH
V
GE
=11V
6
‐‐‐Tvj=125
℃
—Tvj=25
℃
V
GE
=15V
V
GE
=13V
E
off
E[mj]
I
C
[A]
100
4
50
V
GE
=9V
2
E
on
0
0
1
2
3
4
0
0
60
120
180
240
V
CE
[V]
I
C
[A]
Fig.3 Typ. Output Characteristics
Fig.4 Switching Loss vs. Collector Current
Datasheet
W
I-D06-J -0059 Rev.A/0
Page 4 of 9
BYD Microelectronics Co., Ltd.
BG100B06LX2R-I
80
16
60
I
RR
[A],E
rec
[mJ],Q
rr
[uC
V
CC
=300V
I
C
=100A
V
GE
=15V
T
vj
=125
℃
10
20
47
1.75
R
G
[Ω]=5.1
12
V
CC
=300V
I
C
=100A
V
GE
=15V
T
vj
=125
℃
E
on
I
RR
E[mj]
40
8
E
off
20
Q
rr
E
rec
4
E
rec
0
400
600
800
1000
1200
1400
1600
0
0
10
20
30
40
50
di/dt[A/us]
R
G
[Ω]
Fig.5 Typ. reverse recovery characteristicsvs di/dt
Fig.6 Switching Loss vs. Gate Resistor
1000
10000
V
cc
=300V
V
GE
=15V
R
G
=1.75Ω
T
vj
=125℃
t
off
t
don
t[ns]
V
CC
=300V
I
C
=100A
V
GE
=15V
T
vj
=125℃
1000
t
don
t
off
t[ns]
100
t
f
t
r
100
t
r
t
f
10
0
40
80
120
160
200
10
0
10
20
30
40
50
I
C
[A]
Fig.7 Typ. switching times vs. I
c
R
G
[Ω]
Fig.8 Typ. switching times vs. gate resistor R
G
Datasheet
W
I-D06-J -0059 Rev.A/0
Page 5 of 9
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