WPM3401 场效应晶体管
参数指标
Product:WPM3401
Configuration:P-Channel MOSFET
Channel:1
Drain-Source Voltage VDS(V)(Max.):-30
Gate-Source Voltage VGS(V)(Max.):±12
Gate Threshold Voltage VGS(th)(V)(Max.):-1.5
Drain-to-Source On-Resistance RDS(ON)@(VGS = 4.5V)(Ω)(Typ.):0.043
Drain-to-Source On-Resistance RDS(ON)@(VGS = 4.5V)(Ω)(Max.):0.056
Input Capacitance CISS(pF)(Typ.):1250
Continuous Drain Current ID(@TA = 25℃)(A)(Max.):-4.6
Power Dissipation PD(@TA = 25℃)(W)(Max.):1.3
Body Diode Forward Voltage VSD(V)(Typ.):-0.75
Body Diode Forward Voltage VSD(V)(Max.):-1.5
Package:SOT-23-3L
Size(mm)(LxW):2.92 x 2.8
热搜元器件
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