WPM2015 场效应晶体管
参数指标
Product:WPM2015
Configuration:P-Channel MOSFET
Channel:1
Drain-Source Voltage VDS(V)(Max.):-20
Gate-Source Voltage VGS(V)(Max.):±8
Gate Threshold Voltage VGS(th)(V)(Max.):-0.81
Drain-to-Source On-Resistance RDS(ON)@(VGS = 4.5V)(Ω)(Typ.):0.081
Drain-to-Source On-Resistance RDS(ON)@(VGS = 4.5V)(Ω)(Max.):0.11
Input Capacitance CISS(pF)(Typ.):534
Continuous Drain Current ID(@TA = 25℃)(A)(Max.):-2.2
Power Dissipation PD(@TA = 25℃)(W)(Max.):0.8
Body Diode Forward Voltage VSD(V)(Typ.):-0.74
Body Diode Forward Voltage VSD(V)(Max.):-1.5
Package:SOT-23
Size(mm)(LxW): 2.9 x 2.4
热搜元器件
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