WPM2014
WPM2014
Single P-Channel, -20V, -4.9A, Power MOSFET
V
DS
(V)
-20
Rds(on) (Ω)
0.050 @ V
GS
=–4.5V
0.063 @ V
GS
=–2.5V
0.074 @ V
GS
=–1.8V
DFN2x2-6L
Http//:www.sh-willsemi.com
Descriptions
The WPM2014 is P-Channel enhancement MOS
Field
Effect
Transistor.
Uses
advanced
trench
(ON)
D
6
D
5
D
S
4
technology and design to provide excellent R
DS
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WPM2014 is Pb-free.
1
D
2
D
S
3
G
Pin configuration (Top view)
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package DFN2x2-6L
WLSI
S
Y
WW
6
5
WLSI
SYWW
4
1
2
3
= Company code
= Device code
= Year (Last digit)
= Week
Marking
Applications
Device
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
Order information
Package
DFN2x2-6L
Shipping
3000/Reel&Tape
WPM2014-6/TR
Will Semiconductor Ltd.
1
Oct, 2013-Rev.1.3
WPM2014
ABSOLUTE MAXIMUM RATINGS
(Ta = 25 °C, unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
Maximum Power Dissipation
a
a
Symbol
V
DS
V
GS
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
b
10 S
Steady State
-20
±8
Unit
V
I
D
P
D
I
D
P
D
I
DM
T
J
T
stg
-4.9
-3.9
2.0
1.3
-3.5
-2.8
1.0
0.6
-20
150
-4.1
-3.2
1.4
0.9
-2.9
-2.3
0.7
0.4
A
W
A
W
A
°C
°C
Continuous Drain Current (T
J
= 150 °C)
Maximum Power Dissipation
Pulsed Drain Current
c
b
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
Operating Junction Temperature
Storage Temperature Range
-55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient Thermal Resistance
Junction-to-Ambient Thermal Resistance
Junction-to-Case Thermal Resistance
a
Symbol
t ≤ 10 s
Steady State
b
Typical
45
62
80
120
32
Maximum
60
85
115
170
40
Unit
R
θJA
R
θJA
R
θJC
t ≤ 10 s
Steady State
Steady State
°C/W
a
b
c
d
Surface mounted on FR4 Board using 1 in sq pad size, 1oz Cu.
Surface mounted on FR4 board using the minimum recommended pad size, 1oz Cu.
Repetitive rating, pulse width limited by junction temperature, t
p
=10µs, Duty Cycle=1%
Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C.
Will Semiconductor Ltd.
2
Oct, 2013-Rev.1.3
WPM2014
Electronics Characteristics
(Ta=25
o
C, unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
R
DS(on)
g
FS
V
GS
= V
DS
, I
D
= -250uA
V
GS
= -4.5V, I
D
= -4.0A
Drain-to-source On-resistance
V
GS
= -2.5V, I
D
= -3.5A
V
GS
= -1.8V, I
D
= -2.3A
Forward Transconductance
V
DS
= -5 V, I
D
=-3.5A
-0.4
-0.55
50
63
74
10
-0.9
60
72
98
S
mΩ
V
BV
DSS
I
DSS
I
GSS
V
GS
= 0 V, I
D
= -250uA
V
DS
=-16 V, V
GS
= 0V
V
DS
= 0 V, V
GS
= ±8.0V
-20
-1
±100
V
uA
nA
Symbol
Test Conditions
Min
Typ
Max
Unit
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Forward Voltage
td(ON)
tr
td(OFF)
tf
V
SD
V
GS
= 0 V, I
S
= -1.6A
-0.5
V
GS
= -4.5 V, V
DS
= -6 V,
R
L
=6
Ω,
R
G
=3
Ω
7.6
5.5
62
18
-0.74
-1.5
V
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
= -4.5 V, V
DS
= -6 V,
I
D
= -3.3 A
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= -6V
1200
130
115
11.5
0.7
1.0
1.5
nC
pF
DRAIN-to-SOURCE DIODE CHARACTERISTICS
Will Semiconductor Ltd.
3
Oct, 2013-Rev.1.3
WPM2014
Typical Characteristics
(Ta=25
o
C, unless otherwise noted)
20
20
-I
DS
-Drain to Source Current(A)
VGS=-3.0 ~ -4.5V
VGS=-2.5V
V
DS
= -5V
16
12
T=125 C
8
T=25 C
4
0
0.0
o
o
-I
DS
-Drain-to-Source Current (A)
15
VGS=-2.0V
10
VGS=-1.5V
5
VGS=-1.0V
0
0
1
2
3
4
5
T=-50 C
o
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-V
DS
-Drain-to-Source Voltage(V)
-V
GS
-Gate-to-Source Voltage(V)
Output characteristics
Transfer characteristics
100
R
DS(on)
- On-Resistance(m
)
80
R
DS(on)
- On-Resistance (m
)
80
V
GS
=-2.5V
60
V
GS
=-4.5V
70
I
DS
=-3.3A
60
40
50
20
2
4
6
8
-I
DS
-Drain-to-Source Current(A)
10
40
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
-V
GS
-Gate-to-Source Voltage(V)
On-Resistance vs. Drain current
80
R
DS(on)
- On-Resistance (m
)
70
60
50
40
30
20
-50
-25
0
25
50
75
o
On-Resistance vs. Gate-to-Source voltage
0.8
-V
GS(TH)
Gate Threshold Voltage (V)
0.7
0.6
0.5
0.4
0.3
-50
-25
0
25
50
o
I
DS
=-250uA
VGS=-4.5V,ID=-3.3A
100 125 150
Temperature( C)
75
100 125 150
Temperature ( C)
On-Resistance vs. Junction temperature
Threshold voltage vs. Temperature
Will Semiconductor Ltd.
4
Oct, 2013-Rev.1.3
WPM2014
1750
1.5
-ISD-Source to Drain Current(A)
V
GS
=0V
F=1MHz
1500
C - Capacitance(pF)
1250
1000
750
500
250
0
0
4
8
12
1.2
0.9
0.6
0.3
0.3
0.4
0.5
0.6
0.7
0.8
0.9
o
T=150 C
o
T=25 C
Ciss
Coss
Crss
16
20
-V
DS
Drain-to-Source Voltage (V)
-V
SD
-Source-to-Drain Voltage(V)
Capacitance
30
Drain-to-Source diode forward voltage
100
Limited by R
DS(on)
I
D
- Drain Current (A)
10
100 μs
1
25
20
Power (W)
15
1 ms
10 ms
100 ms
1 s, 10 s
DC
BVDSS Limited
10
0.1
5
T
A
= 25 °C
Single Pulse
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
0.01
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
100
Single pulse power
Safe operating power
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
Notes:
2. Per Unit Base = R
thJA
= 6 2 °C/W
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
1000
Square Wave Pulse Duration (s)
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd.
5
Oct, 2013-Rev.1.3
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