SPC4527
N & P Pair Enhancement Mode MOSFET
DESCRIPTION
The SPC4527 is the N- and P-Channel enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
FEATURES
N-Channel
40V/10A,R
DS(ON)
= 24mΩ@V
GS
= 10V
40V/ 8A,R
DS(ON)
= 30mΩ@V
GS
= 4.5V
40V/ 6A,R
DS(ON)
= 36mΩ@V
GS
= 2.5V
P-Channel
-40V/-10A,R
DS(ON)
= 38mΩ@V
GS
=- 10V
-40V/- 8A,R
DS(ON)
= 46mΩ@V
GS
=- 4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOP – 8P package design
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
PIN CONFIGURATION(SOP – 8P)
PART MARKING
2009/02/15
Ver.1
Page 1
SPC4527
N & P Pair Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
4
5
6
7
8
ORDERING INFORMATION
Part Number
SPC4527S8RGB
Symbol
S1
G1
S2
G2
D2
D2
D1
D1
Description
Source 1
Gate 1
Source 2
Gate 2
Drain 2
Drain 2
Drain 1
Drain 1
Package
SOP- 8P
Part
Marking
SPC4527
※
SPC4527S8RGB 13” Tape Reel ; Pb – Free ; Halogen – Free
e
ABSOULTE MAXIMUM RATINGS
(T
A
=25
℃
Unless otherwise noted)
Typical
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(T
J
=150
℃
)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
T
≤
10sec
Steady State
T
A
=25℃
T
A
=70℃
T
A
=25℃
T
A
=70℃
Symbol
N-Channel
V
DSS
V
GSS
I
D
I
DM
I
S
P
D
T
J
T
STG
R
θJA
40
±20
P-Channel
-40
±20
Unit
V
V
A
A
A
W
℃
℃
10.0
8.0
25
2.3
2.5
1.6
-55/150
-55/150
50
80
-10.0
-8.0
-25
-2.3
2.8
1.8
52
80
℃/W
2009/02/15
Ver.1
Page 2
SPC4527
N & P Pair Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS ( NMOS )
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
I
DSS
I
D(on)
R
DS(on)
gfs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=20V,R
L
=4Ω
I
D
≡5.0A,V
GEN
=10V
R
G
=1Ω
V
DS
=20V,V
GS
=0V
f=1MHz
V
DS
=0V,V
GS
=±20V
V
DS
=40V,V
GS
=0V
V
DS
=40V,V
GS
=0V
T
J
=85℃
V
DS
= 5V,V
GS
=4.5V
V
GS
= 10V,I
D
=10A
V
GS
=4.5V,I
D
= 8A
V
GS
=2.5V,I
D
= 6A
V
DS
=15V,I
D
=6.2A
I
S
=2.3A,V
GS
=0V
40
0.5
1.0
±100
1
10
10
0.020
0.023
0.027
13
0.8
10
2.8
3.2
850
110
75
6
10
20
6
12
20
36
12
0.025
0.030
0.036
1.2
14
V
nA
uA
A
Ω
S
V
V
DS
=20V,V
GS
=4.5V
I
D
= 5A
nC
pF
nS
2009/02/15
Ver.1
Page 3
SPC4527
N & P Pair Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS ( PMOS )
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
=0V,I
D
=-250uA
V
GS(th)
V
DS
=V
GS
,I
D
=-250uA
I
GSS
I
DSS
I
D(on)
R
DS(on)
gfs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-20V,R
L
=4Ω
I
D
≡-5.0A,V
GEN
=-4.5V
R
G
=1Ω
V
DS
=-20V,V
GS
=0V
f=1MHz
V
DS
=0V,V
GS
=±20V
V
DS
=-36V,V
GS
=0V
V
DS
=-36V,V
GS
=0V
T
J
=85℃
V
DS
= -5V,V
GS
=-4.5V
V
GS
=-10V,I
D
=-10A
V
GS
=-4.5V,I
D
=- 8A
V
DS
=-15V,I
D
=-5.7A
I
S
=-2.3A,V
GS
=0V
-40
-0.8
-2.5
±100
-1
-10
-10
0.032
0.036
13
-0.8
13
4.5
6.5
1100
145
115
40
55
30
12
80
100
60
20
0.038
0.046
-1.2
20
V
nA
uA
A
Ω
S
V
V
DS
=-20V,V
GS
=-4.5V
I
D
= -5.0A
nC
pF
nS
2009/02/15
Ver.1
Page 4
SPC4527
N & P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
( NMOS )
2009/02/15
Ver.1
Page 5
PCB设计
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