SHANGHAI
MICROELECTRONICS CO., LTD.
Feb 2008
SE8810
Dual N-Channel Enhancement Mode Field Effect Transistor
Revision:A
Features
For a single mosfet
●V
DSS
= 20 V
●R
DS(ON)
< 20mΩ @ V
GS
=4.5V @Ids=7A
R
DS(ON)
< 25mΩ @ V
GS
=2.5V @Ids=4A
Applications
●Battery
protection
●Load
switch
●Power
management
Construction
●Silicon
epitaxial planer
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Continuous
Pulsed
Drain-Source Diode Forward Current
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
T
STG
20
±12
7
28
1.7
1.5
-55 to 150
V
V
A
A
W
°C
ShangHai Sino-IC Microelectronics Co., Ltd.
1.
SE8810
Electrical Characteristics
Symbol
B
VDSS
B
(T
J
=25°C unless otherwise noted)
Test Conditions
Min
20
1
±10
0.5
-
-
0.8
17
20
19
693
189
136
11
1.8
4.9
31
nC
1.2
20
25
mΩ
S
pF
pF
pF
Typ
Max
Units
V
μA
μA
V
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-Off DelayTime
Turn-On Rise Time
Turn-Off Fall Time
OFF CHARACTERISTICS
I
D
=250μA, V
GS
=0 V
V
DS
=16 V, V
GS
=0 V
V
DS
=0 V, V
GS
=±12 V
I
DSS
I
GSS
V
GS
(th)
R
DS
(ON)
g
FS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
t
d(off)
t
d(r)
t
d(f)
ON CHARACTERISTICS
V
DS
=VGS I
D
=250μA
V
GS
=4.5V, I
D
=7A
V
GS
=2.5V, I
D
=5A
V
DS
=5V, I
D
=5A
DYNAMIC PARAMETERS
V
GS
=0V,
f=1.0MHz
V
DS
=8V,
SWITCHING PARAMETERS
V
GS
=4.0V
V
DS
=10V
I
D
=5A
V
GEN
=4.0V
R
GEN
=10Ω
V
DD
=10V
I
D
=1A
96
62
40
ns
ShangHai Sino-IC Microelectronics Co., Ltd.
2.
SE8810
ShangHai Sino-IC Microelectronics Co., Ltd.
3.
SE8810
Typical Characteristics
The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd.
© 2005 SINO-IC – Printed in China – All rights reserved.
SHANGHAI SINO-IC MICROELECTRONICS CO., LTD
Add:
Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong,
Shanghai 201203, China
Phone:
+86-21-33932402 33932403 33932405 33933508 33933608
Fax:
+86-21-33932401
Email:
webmaster@sino-ic.com
Website:
http://www.sino-ic.com
ShangHai Sino-IC Microelectronics Co., Ltd.
4.
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
