KDF100N03P
N-Channel MOSFET
Features
100V,46A,Rds(on)(typ)=16m @Vgs=10V
High Ruggedness
Fast Switching
100% Avalanche Tested
Improved dv/dt Capability
Preliminary
General Description
This Power MOSFET is produced using KEDA’s advanced
Trench MOS Technology. This latest technology has been
especially designed to minimize on-state resistance, have a
high rugged avalanche characteristics. These devices are well
suited for low voltage application such as automotive,DC/DC
converters,and high efficiency switch for power management in portable and battery products.
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
P
D
T
J
T
STG
Parameter
Drain-Source Voltage
Continuous Drain Current (T
C
=25
℃)
Continuous Drain Current (T
C
=100℃)
Pulsed Drain Current (Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy (Note 2)
Maximum Power Dissipation (T
C
=25
℃)
Derating Factor above 25℃
Operating Junction Temperature Range
Storage Temperature Range
Value
100
46
33
164
+ 30
42
200
1.3
-55 to +150
-55 to +150
Units
V
A
A
A
V
mJ
W
W/℃
℃
℃
Thermal Characteristics
Symbol
R
th j-c
R
th c-s
R
th j-a
Parameter
Thermal Resistance, Junction to case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction to Ambient
Max.
0.75
0.5
62.5
Units
℃
/ W
℃
/ W
℃
/ W
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Total 4 Pages
Preliminary February.2009
KDF100N03P
Electrical Characteristics
(T
C
=25℃ unless otherwise noted)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
Ciss
Coss
Crss
Parameter
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate Leakage Current, Forward
Gate Leakage Current, Reverse
Gate Threshold Voltage
Drain-Source On-State Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
GS
=0V, I
D
=250uA
V
DS
=100V, V
GS
=0V
V
GS
=30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
V
GS
=V
DS
, I
D
=250uA
V
GS
=10V, I
D
=28A
V
DD
=80V
V
GS
=10V
I
D
=28A
(Note 3)
V
DD
=50V,V
GS
=10V
I
D
=28A,R
G
=3.4Ω
T
C
=25
℃
(Note 3)
V
DS
=25V
V
GS
=0V
f = 1MHz
Min.
100
-
-
-
2
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
16
-
-
-
12
70
30
60
2419
232
120
Max.
-
250
100
-100
4
23
96
20
72
-
-
-
-
-
-
-
Units
V
uA
nA
nA
V
m
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode Characteristics
(T
C
=25℃ unless otherwise noted)
Symbol
I
S
I
SM
V
SD
t
r r
Q
r r
Parameter
Test Conditions
Min.
-
-
-
-
-
Typ.
-
-
-
112
535
Max.
46
164
1.5
220
1010
Units
A
A
V
ns
nC
Continuous Source Diode Forward Current
Pulsed Source Diode Forward Current (Note 1)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
=0V, I
S
=28A
V
GS
=0V, I
S
=28A
dI
F
/dt = 100A/us
Notes：
：
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=0.85mH, I
AS
=7A, V
DD
=50V, R
G
=25 , Starting T
J
=25℃
3. Pulse Width ≤ 300 us; Duty Cycle≤2%
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Total 4 Pages
Preliminary February.2009
KDF100N03P
Test Circuits and Waveform
Fig.1 Gate Charge Test Circuit
Fig.2 Gate Charge Waveform
Fig.3 Switching time Test Circuit
Fig.4 Switching time Waveform
Fig.5 Unclamped Inductive
Switching Test Circuit
Fig.6 Unclamped Inductive
Switching Waveform
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Total 4 Pages
Preliminary February.2009
KDF100N03P
Disclaimers
KEDA Semiconductor Co., Ltd reserves the right to make changes without notice in order to improve
reliability, function or design and to discontinue any product or service without notice. Customers should
obtain the latest relevant information before orders and should verify that such information is current and
complete. All products are sold subject to KEDA’s terms and conditions supplied at the time of order
acknowledgement.
KEDA Semiconductor Co., Ltd warrants performance of its hardware products to the specifications at the
time of sale, Testing, reliability and quality control are used to the extent KEDA deems necessary to support
this warrantee. Except where agreed upon by contractual agreement, testing of all parameters of each
product is not necessarily performed.
KEDA Semiconductor Co., Ltd does not assume any liability arising from the use of any product or circuit
designs described herein. Customers are responsible for their products and applications using KEDA’s
components. To minimize risk, customers must provide adequate design and operating safeguards.
KEDA Semiconductor Co., Ltd does not warrant or convey any license either expressed or implied under its
parent rights, nor the rights of others. Reproduction of information in KEDA’s datasheets or data books sis
permissible only if reproduction is without modification or alteration. Reproduction of this information with
any alteration is an unfair and deceptive business practice. KEDA Semiconductor Co., Ltd is not
responsible or liable for such altered documentation.
Resale of KEDA’s products with statements different from or beyond the parameters stated by KEDA
Semiconductor Co., Ltd for that product or service voids all express or implied warrantees for the
associated KEDA’s product or service and is unfair and deceptive business practice. KEDA Semiconductor
Co., Ltd is not responsible or liable for any such statements.
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Total 4 Pages
Preliminary February.2009
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