HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200513
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 1/4
H9926TS / H9926CTS
Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)
8-Lead Plastic
TSSOP-8L
Package Code: TS
H9926TS Symbol & Pin Assignment
8
7
6
5
Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced
trench process. It has been optimized for power management applications with a
wide range of gate drive voltage (2.5V-10V)
Q2
Q1
1
2
3
4
Pin 1: Drain 1
Pin 2 / 3: Source 1
Pin 4: Gate 1
Pin 5: Gate 2
Pin 6 / 7: Source 2
Pin 8: Drain 2
Features
•
R
DS(on)
=40mΩ@V
GS
=2.5V, I
D
=5.2A; R
DS(on)
=30mΩ@V
GS
=4.5V, I
D
=6A
•
High Density Cell Design for Ultra Low On-Resistance
•
High Power and Current Handing Capability
•
Fully Characterized Avalanche Voltage and Current
•
Ideal for Li ion Battery Pack Applications
H9926CTS Symbol & Pin Assignment
8
7
6
5
Q2
Q1
1
2
3
4
Pin 1: Drain
Pin 2 / 3: Source 1
Pin 4: Gate 1
Pin 5: Gate 2
Pin 6 / 7: Source 2
Pin 8: Drain
Applications
•
Battery Protection
•
Load Switch
•
Power Management
Absolute Maximum Ratings
(T =25 C, unless otherwise noted)
o
A
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
j
, T
stg
R
θJA
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulsed)
*1
Parameter
Ratings
20
±12
6
30
1.5
0.96
-55 to +150
83
Units
V
V
A
A
W
W
°C
°C/W
Total Power Dissipation @T
A
=25
o
C
Total Power Dissipation @T
A
=75
o
C
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient
*2
*1: Maximum DC current limited by the package
*2: 1-in
2
2oz Cu PCB board
H9926TS, H9926CTS
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics
(T
A
=25°C, unless otherwise noted)
Symbol
•
Static
BV
DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
g
FS
•
Dynamic
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DD
=10V, I
D
=1A, V
GS
=4.5V
R
GEN
=6Ω
V
DS
=8V, V
GS
=0V, f=1MHz
V
DS
=10V, I
D
=6A, V
GS
=4.5V
-
-
-
-
-
-
-
-
-
-
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward Transconductance
V
GS
=0V, I
D
=250uA
V
GS
=2.5V, I
D
=5.2A
V
GS
=4.5V, I
D
=6A
V
DS
=V
GS
, I
D
=250uA
V
DS
=20V, V
GS
=0V
V
GS
=±12V, V
DS
=0V
V
DS
=10V, I
D
=6A
20
-
-
0.6
-
-
7
Characteristic
Test Conditions
Min.
Spec. No. : MOS200513
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 2/4
Typ.
Max.
Unit
-
34
25
-
-
-
13
-
40
30
1.5
1
±100
-
V
mΩ
V
uA
nA
S
4.86
0.92
1.4
562
106
75
8.1
9.95
21.85
5.35
-
-
-
-
-
-
-
-
ns
-
-
pF
nC
•
Drain-Source Diode Characteristics
I
S
V
SD
Maximum Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
=0V, I
S
=1.7A
-
-
-
-
1.7
1.2
A
V
Note: Pulse Test: Pulse Width
≤300us,
Duty Cycle≤2%
Switching
Test Circuit
V
DD
t
d(on)
t
on
t
r
Switching
Waveforms
t
d(off)
t
off
t
f
90%
90%
R
D
V
IN
V
GEN
R
G
G
S
Input, V
IN
10%
Pulse Width
50%
50%
90%
D
V
OUT
Output, V
OUT
10%
10%
Inverted
H9926TS, H9926CTS
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TSSOP-8L Dimension
D
Spec. No. : MOS200513
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 3/4
H9926TS
Marking:
Pb-Free: "
.
"
(Note)
Normal: None
Pb Free Mark
Control Code
Data Code
Pin 1 Index
8
7
6
5
E1
Pin1
index
2
3
4
E
Pin Style: 1.S2 2.G2 3.S1 4.G1 5 & 6.D1 7 & 8.D2
DIM
A
A1
b
C
D
E
E1
e
L
S
Min.
Max.
-
1.20
0.05
0.15
0.19
0.3
0.09
0.20
2.90
3.10
6.20
6.60
4.30
4.50
0.65 BSC
0.45
0.75
o
0
8
o
*: Typical, Unit: mm
H9926CTS
Marking:
Pb-Free: "
.
"
(Note)
Normal: None
Detail F
A1
b
R 0.15
C
Seating
Plane
Control Code
Data Code
Pin 1 Index
Pin Style: 1.S2 2.G2 3.S1 4.G1 5 & 6 & 7 & 8.D
A
e
S
L
0.25
Detail F
Note: Green label is used for pb-free packing
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
8-Lead TSSOP-8L Plastic
Surface Mounted Package
HSMC Package Code: TS
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H9926TS, H9926CTS
H 9 9 2 6 CT S
Pb Free Mark
H9 9 2 6 TS
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
P
T
P
Ramp-up
T
L
Ts
max
Temperature
t
L
Spec. No. : MOS200513
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 4/4
Critical Zone
T
L
to T
P
Ts
min
t
S
Preheat
Ramp-down
25
t 25
o
C to Peak
Time
Profile Feature
Average ramp-up rate (T
L
to T
P
)
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
Tsmax to T
L
- Ramp-up Rate
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Time within 5
o
C of actual Peak
Temperature (t
P
)
Ramp-down Rate
Time 25
o
C to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Sn-Pb Eutectic Assembly
<3
o
C/sec
Pb-Free Assembly
<3
o
C/sec
100
o
C
150
o
C
60~120 sec
150
o
C
200
o
C
60~180 sec
<3
o
C/sec
<3
o
C/sec
183
o
C
60~150 sec
240
o
C +0/-5
o
C
10~30 sec
<6
o
C/sec
<6 minutes
217
o
C
60~150 sec
260
o
C +0/-5
o
C
20~40 sec
<6
o
C/sec
<8 minutes
Peak temperature
245
o
C
±5
o
C
260
o
C +0/-5
o
C
Dipping time
5sec
±1sec
5sec
±1sec
H9926TS, H9926CTS
HSMC Product Specification
模拟电子
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