HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200602
Issued Date : 2006.02.01
Revised Date : 2006.02.07
Page No. : 1/5
H03N60 Series
N-Channel Power Field Effect Transistor
H03N60 Series Pin Assignment
Tab
Description
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
1
2
3
3-Lead Plastic
TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic
TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
1
2
3
D
G
S
Features
H03N60 Series
Symbol:
•
Robust High Voltage Termination
•
Avalanc he Energy Specified
•
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
•
Diode is Characterized for Use in Bridge Circuits
•
I
DSS
and V
DS(on)
Specified at Elevated Temperature
Absolute Maximum Ratings
Symbol
I
D
I
DM
V
GS
Parameter
Drain to Current (Continuous)
Drain to Current (Pulsed)
Gate-to-Source Voltage (Continue)
Total Power Dissipation (T
C
=25
o
C)
H03N60E (TO-220AB)
P
D
H03N60F (TO-220FP)
Derate above 25°C
H03N60E (TO-220AB)
H03N60F (TO-220FP)
T
j
, T
stg
E
AS
T
L
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C
(V
DD
=100V, V
GS
=10V, I
L
=2A, L=10mH, R
G
=25Ω)
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
0.4
0.33
-55 to 150
35
260
°C
mJ
°C
W/°C
55
28
W
Value
3
12
±30
Units
A
A
V
H03N60E, H03N60F
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance Junction to Case Max.
Thermal Resistance Junction to Ambient Max.
Value
TO-220AB
TO-220FP
62.5
Spec. No. : MOS200602
Issued Date : 2006.02.01
Revised Date : 2006.02.07
Page No. : 2/5
Units
2
3.3
°C/W
°C/W
ELectrical Characteristics
(Tj=25°C, unless otherwise specified)
Symbol
V
(BR)DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
L
D
L
S
Characteristic
Drain-Source Breakdown Voltage (V
GS
=0V, I
D
=250uA)
Drain-Source Leakage Current (V
DS
=600V, V
GS
=0V)
Drain-Source Leakage Current (V
DS
=480V, V
GS
=0V, T
j
=125°C)
Gate-Source Leakage Current-Forward (V
gsf
=30V, V
DS
=0V)
Gate-Source Leakage Current-Reverse (V
gsr
=-30V, V
DS
=0V)
Gate Threshold Voltage (V
DS
=V
GS
, I
D
=250uA)
Static Drain-Source On-Resistance (V
GS
=10V, I
D
=1.5A)*
Forward Transconductance (V
DS
≥50V,
I
D
=1.5A)*
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to source bond pad)
(V
DS
=300V, I
D
=3A, V
GS
=10V)*
(V
DD
=300V, I
D
=3A, R
G
=18Ω,
V
GS
=10V)*
V
GS
=0V, V
DS
=25V, f=1MHz
Min.
600
-
-
-
-
2
-
1
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
465
66
13
12
21
30
24
18
5
12
4.5
7.5
Max.
-
1
50
100
-100
4
4
-
-
-
-
-
-
-
-
30
-
-
-
-
nH
nH
nC
ns
pF
Unit
V
uA
uA
nA
nA
V
Ω
mhos
*: Pulse Test: Pulse Width
≤300us,
Duty Cycle≤2%
Source-Drain Diode
Symbol
V
SD
t
on
t
rr
Forward On Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
Characteristic
I
S
=3A, V
GS
=0V, T
J
=25
o
C
I
S
=3A, V
GS
=0V, d
IS
/d
t
=100A/us
Min.
-
-
-
Typ.
-
**
340
Max.
1.6
-
-
Units
V
ns
ns
**: Negligible, Dominated by circuit inductance
H03N60E, H03N60F
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
On-Region Characteristic
10
9
V
GS
=10V
V
GS
=8V
800
1000
Spec. No. : MOS200602
Issued Date : 2006.02.01
Revised Date : 2006.02.07
Page No. : 3/5
Capacitance Characteristics
I
D
, Drain-Source Current (A)
8
7
6
5
Capacitance (pF)
V
GS
=6V
V
GS
=5V
600
4
3
2
1
0
0
2
4
6
8
10
V
GS
=4V
400
Ciss
200
Crss
0
0.1
1
10
100
Coss
V
DS
, Drain-Source Voltage (V)
V
DS
, Deain-Source Voltage (V)
Typical On-Resistance & Drain Current
6.0
6
Drain Current Variation with
Gate Voltage and Temperature
V
DS
=10 V
T
C
= 25 C
o
R
DS(ON)
, Drain-Source On-Resistance
...
5.5
V
GS
=10V
4.5
4.0
3.5
3.0
2.5
2.0
0
1
2
3
4
5
6
I
D
, Drain-Source Current (A)
5.0
5
4
3
2
1
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
I
D
, Drain Current (A)
V
GS
, Gate-Source Voltage (V)
Gate Charge Waveforms
12
10
Maximum Safe Operating Area
10
V
DS
=200V
8
I
D
, Drain Current (A)
1ms
10ms
1
V
GS
(V)
6
4
100ms
2
0
0
1
2
3
4
5
0.1
10
100
1000
Q, Gate Charge (nC)
V
DS
, Drain-Source Voltage (V)
H03N60E, H03N60F
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-220AB Dimension
Marking:
A
D
B
E
C
F
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
H
Spec. No. : MOS200602
Issued Date : 2006.02.01
Revised Date : 2006.02.07
Page No. : 4/5
E
0 3N6 0
Date Code
Control Code
H
I
G
Tab
P
L
J
M
3
2
1
O
N
K
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2 & Tab.Drain 3.Source
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Min.
5.58
8.38
4.40
1.15
0.35
2.03
9.66
-
-
3.00
0.75
2.54
1.14
-
12.70
14.48
Max.
7.49
8.90
4.70
1.39
0.60
2.92
10.28
*16.25
*3.83
4.00
0.95
3.42
1.40
*2.54
14.27
15.87
*: Typical, Unit: mm
3-Lead TO-220AB
Plastic Package
HSMC Package Code: E
TO-220FP Dimension
Marking:
A
α
1
D
α
4
E O
C
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
H
F
0 3N6 0
Date Code
Control Code
α
2
α
3
α
5
I
N
3
G
J
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
F
2
K
1
M
L
DIM
Min.
A
6.48
C
4.40
D
2.34
E
0.45
F
9.80
G
3.10
I
2.70
J
0.60
K
2.34
L
12.48
M
15.67
N
0.90
O
2.00
-
α1/2/4/5
-
α3
Max.
7.40
4.90
3.00
0.80
10.36
3.60
3.43
1.00
2.74
13.60
16.20
1.47
2.96
*5
o
*27
o
*: Typical, Unit: mm
3-Lead TO-220FP
Plastic Package
HSMC Package Code: F
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-2521-2056 Fax: 886-2-2563-2712
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-598-3621~5 Fax: 886-3-598-2931
H03N60E, H03N60F
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
P
T
P
Ramp-up
T
L
Ts
max
Temperature
t
L
Spec. No. : MOS200602
Issued Date : 2006.02.01
Revised Date : 2006.02.07
Page No. : 5/5
Critical Zone
T
L
to T
P
Ts
min
t
S
Preheat
Ramp-down
25
t 25
o
C to Peak
Time
Profile Feature
Average ramp-up rate (T
L
to T
P
)
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
Tsmax to T
L
- Ramp-up Rate
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Time within 5
o
C of actual Peak
Temperature (t
P
)
Ramp-down Rate
Time 25
o
C to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Sn-Pb Eutectic Assembly
<3
o
C/sec
100
o
C
150
o
C
60~120 sec
<3
o
C/sec
183
o
C
60~150 sec
240
o
C +0/-5
o
C
10~30 sec
<6
o
C/sec
<6 minutes
Pb-Free Assembly
<3
o
C/sec
150
o
C
200
o
C
60~180 sec
<3
o
C/sec
217
o
C
60~150 sec
260
o
C +0/-5
o
C
20~40 sec
<6
o
C/sec
<8 minutes
Peak temperature
245
o
C
±5
o
C
260
o
C
±5
o
C
Dipping time
10sec
±1sec
10sec
±1sec
H03N60E, H03N60F
HSMC Product Specification
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