BF92301P
BYD Microelectronics Co., Ltd.
20V P-Channel MOSFET
General Description
The BF92301P uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge.
This device is suitable for used as a load switch or in
PWM applications.
Features
V
DS
(V) = -20V
I
D
= -2.8A
Low on-state resistance
R
DS (on)
= 80mΩ TYP. (V
GS
= -4.5V)
R
DS (on)
=100mΩ TYP.(V
GS
= -2.5V)
Absolute Maximum Ratings (Ta = 25℃)
Parameter
P-MOSFET
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
a
a
Symbol
Value
-20
±8
-2.8
-8
1.3
150
-55~+150
Unit
V
V
A
A
W
℃
℃
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
D
T
ch
T
stg
Maximun Power Dissipation
Channel Temperature
Storage Temperature
Note:
Mounted on FR4 Board of 1”x1”.
Caution:
These values must not be exceeded under any conditions.
Ordering Information
Part Number :
Package :
BF92301P
SOT-23
Datasheet
ES-BYD-WDZCE03D-060 Rev.A/1
Page 1 of 5
BYD Microelectronics Co., Ltd.
BF92301P
Electrical Characteristics (T
A
= 25
℃
)
Symbol
Characteristics
Test Conditions
Min.
Typ.
Max.
Unit
I
DSS
I
GSS
V
GS
(th)
|y
fs
|
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
SD
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate threshold voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Drain-Source Diode Forward Voltage
V
DS
= -20V,V
GS
=0V
V
GS
=±8V,V
DS
=0V
V
DS
=V
GS
,I
D
= 250µA
V
DS
= -5V,I
D
= -4A
V
GS
= -4.5V,I
D
= -1.4A
V
GS
= -2.5V,I
D
= -1.4A
V
GS
=0V,
V
DS
=-15V,f=1.0MHZ
-0.45
6.5
80
100
386.6
62.9
20.7
V
DD
=-10V, I
D
=-1.4A,
V
GS
=-4.5V, R
G
=4.7Ω
V
DD
=-10V, I
D
=-1.4A,
V
GS
=-4.5V, R
G
=10Ω
I
s
=-2.8A,V
GS
=0V
5.6
40.05
7.4
6.5
1.5
1.5
-1
±100
-0.95
100
150
µA
nA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
-1.2
V
Typical characteristics (25
℃
unless noted)
Figure 1
20
I
D
(-A)
16
V
GS
=-2.5V
12
V
GS
=-2V
8
V
GS
=-1.5V
Output Caracteristics
Figure 2
10
I
D
(-A)
8
Transfer Characteristics
V
GS
=-4.5V
6
4
4
2
T
C
=25
℃
V
DS
=-10V
0
1
2
3
4 V
GS
(-V)
5
0
0
1
2
3
4 V
DS
(-V)
5
0
Datasheet
ES-BYD-WDZCE03D-060 Rev.A/1
Page 2 of 5
BYD Microelectronics Co., Ltd.
BF92301P
Package Drawing
θ
b
0.25
E1
E
e
e1
L
L1
c
A2
A1
A
D
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Note:
Dimensions In Millimeters
Min
Max
0.009
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950TYP
0.800
2.000
0.550REF
0.300
0.500
0°
8°
Dimensions In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037TYP
0.071
0.079
0.022REF
0.012
0.020
0°
6°
1. Dimension D does not include mold flash, protrusions or gate burrs. mold flash, protrusions or gate
burrs shall not exceed 0.10mm per side.
2. Dimension E1 does not include inter-lead flash or protrusion. Inter-lead flash or protrusion shall not
exceed 0.1mm per side.
Datasheet
ES-BYD-WDZCE03D-060 Rev.A/1
Page 4 of 5
BYD Microelectronics Co., Ltd.
BF92301P
RESTRICTIONS ON PRODUCT USE
The information contained herein is subject to change without notice.
BYD Microelectronics Co., Ltd. (short for BME) exerts the greatest possible effort to ensure high
quality and reliability. Nevertheless, semiconductor devices in general can malfunction or fail due to
their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing BME products, to comply with the standards of safety in making a safe design
for the entire system, including redundancy, fire-prevention measures, and malfunction prevention,
to prevent any accidents, fires, or community damage that may ensue. In developing your designs,
please ensure that BME products are used within specified operating ranges as set forth in the
most recent BME products specifications.
The BME products listed in this document are intended for usage in general electronics
applications (personal equipment, office equipment, domestic appliances, etc.). These BME
products are neither intended nor warranted for usage in equipment that requires extraordinarily
high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments,
airplane or spaceship instruments, transportation instruments, traffic signal instruments,
combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended
Usage of BME products listed in this document shall be made at the customer’s own risk.
BME is not responsible for any problems caused by circuits or diagrams described herein whose
related industrial properties, patents, or other rights belong to third parties. The application circuit
examples explain typical applications of the products, and do not guarantee the success of any
specific mass-production design.
Datasheet
ES-BYD-WDZCE03D-060 Rev.A/1
Page 5 of 5
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