JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT-23
2SC2712
TRANSISTOR (NPN)
1. BASE
2. EMITTER
3. COLLECTOR
FEATURE
·
Low Noise: NF=1 dB (Typ),10dB(MAX)
·
Complementary to 2SA1162
MAXIMUM RATINGS
(T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
50
5
150
150
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Noise Figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
NF
Test conditions
I
C
= 100μA, I
E
=0
I
C
=1mA ,I
B
=0
I
E
= 100μA, I
C
=0
V
CB
= 60 V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=2mA
I
C
= 100mA, I
B
=10mA
V
CE
=10V, I
C
= 1mA
V
CB
=10V, I
E
=0,f=1 MHz
V
CE
=6V,I
C
=0.1mA,f=1kHz,
Rg=10kΩ
80
2.0
1.0
3.5
10
70
0.1
Min
60
50
5
0.1
0.1
700
0.25
V
MHz
pF
dB
Typ
Max
Unit
V
V
V
μA
μA
CLASSIFICATION OF h
FE
Rank
Range
Marking
O
70-140
LO
Y
120-240
LY
GR
200-400
LG
BL
350-700
LL
B,Dec,2011
Typical Characterisitics
Static Characteristic
10
400
2SC2712
h
FE
—— I
C
COMMON EMITTER
VCE=6V
COMMON EMITTER
Ta=25
℃
(mA)
8
50uA
h
FE
45uA
40uA
35uA
30uA
300
I
C
Ta=100
℃
COLLECTOR CURRENT
DC CURRENT GAIN
6
200
Ta=25
℃
4
25uA
20uA
2
15uA
10uA
I
B
=5uA
100
0
0
2
4
6
8
10
0
0.5
1
10
100
150
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
0.3
V
CEsat
β=10
—— I
C
1.2
V
BEsat
—— I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
0.2
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
Ta=25
℃
0.8
Ta=100
℃
Ta=100
℃
0.1
0.4
Ta=25
℃
β=10
0.0
1
10
100
150
0.0
1
10
100
150
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
150
100
I
C
COMMON EMITTER
VCE=6V
—— V
BE
1000
f
T
——
I
C
(mA)
Ta=100
℃
10
I
C
Ta=25
℃
TRANSITION FREQUENCY
COLLECTOR CURRENT
f
T
100
1
(MHz)
COMMON EMITTER
V
CE
=10V
Ta=25 C
o
0.1
0.2
10
0.4
0.6
0.8
1.0
1
3
10
30
70
BASE-EMMITER VOLTAGE V
BE
(V)
COLLECTOR CURRENT
I
C
(mA)
100
C
ob
/ C
ib
—— V
CB
/ V
EB
f=1MHz
I
E
=0/ I
C
=0
Ta=25
℃
Pc
200
——
Ta
Cib
(pF)
10
COLLECTOR POWER DISSIPATION
Pc (mW)
150
C
CAPACITANCE
Cob
1
100
50
0.1
0.2
0
1
10
20
0
25
50
75
100
125
REVERSE VOLTAGE
V
R
(V)
AMBIENT TEMPERATURE
Ta
(
℃
)
B,Dec,2011
150
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