JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
2SA1267
TRANSISTOR (PNP)
FEATURES
High h
FE
Excellent h
FE
linearing
TO-92S
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-50
-50
-5
-0.15
0.4
150
-55-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
NF
Test
conditions
MIN
TYP
MAX
UNIT
V
V
V
I
C
=-100
μA,
I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-100
μA,
I
C
=0
V
CB
=-50 V, I
E
=0
V
EB
=-5 V, I
C
=0
V
CE
=-6 V, I
C
=-2mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-10 V, I
C
=-1mA, f=30MHz
V
CB
=-10 V, I
E
=0, f=1KHz
V
CE
=-6 V, I
C
=-0.1 mA,
f=1 KH
Z
, Rg=10 KΩ
-50
-50
-5
-0.1
-0.1
70
80
3.5
10
700
-0.25
μA
μA
V
MHz
pF
dB
CLASSIFICATION OF
Rank
Range
h
FE
O
70-140
Y
120-240
GR
200-400
BL
300-700
B,Apr,2012
Typical Characterisitics
Static Characteristic
-4
400
2SA1267
h
FE
——
I
C
COMMON EMITTER
V
CE
=-6V
COMMON EMITTER
T
a
=25
℃
(mA)
-3
-15.0uA
-13.5uA
h
FE
-12.0uA
-10.5uA
300
I
C
T
a
=100
℃
COLLECTOR CURRENT
-2
-9.0uA
-7.5uA
-6.0uA
DC CURRENT GAIN
200
T
a
=25
℃
-1
-4.5uA
-3.0uA
I
B
=-1.5uA
100
-0
-0
-3
-6
-9
-12
0
-1
-10
-100
-150
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
-1000
V
CEsat
β=10
——
I
C
-1000
V
BEsat
β=10
—— I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
-800
T
a
=25
℃
-100
T
a
=100
℃
T
a
=25
℃
T
a
=100
℃
-600
-10
-1
-10
-100
-150
-400
-1
-10
-100
-150
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
20
C
ob
/ C
ib
——
V
CB
/ V
EB
f=1MHz
I
E
=0/I
C
=0
(MHz)
T
a
=25
℃
1000
f
T
COMMON EMITTER
V
CE
=-10V
T
a
=25
℃
——
I
C
10
(pF)
Cib
TRANSITION FREQUENCY
C
f
T
100
CAPACITANCE
Cob
3
1
-0.1
-1
-10
-20
10
-0.1
-1
-10
-100
REVERSE VOLTAGE
V
(V)
COLLECTOR CURRENT
I
C
(mA)
500
P
C
——
T
a
COLLECTOR POWER DISSIPATION
P
C
(mW)
400
300
200
100
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
B,Apr,2012