WSB5511M
WSB5511M
3A Schottky Barrier Diode
Http://www.sh-willsemi.com
Features
Low forward voltage
Extremely low thermal resistance
High current capability
Circuit
SMA (DO-214AC)
Applications
Switching circuit
Middle current rectification
Marking
Absolute maximum ratings
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (DC)
Forward Peak Surge Current
(1)
Junction temperature
Operating temperature
Storage temperature
Symbol
V
RRM
V
R
I
O
I
FSM
T
J
Topr
Tstg
Value
40
40
3.0
50
-55 ~ 150
-55 ~ 150
-55 ~ 150
Unit
V
V
A
A
O
C
C
C
O
O
Electronics characteristics
(T
A
=25
o
C)
Parameter
Forward voltage
(2)
Reverse current
Junction capacitance
Thermal resistance
Order Informations
Device
WSB5511M-2/TR
Package
SMA (DO-214AC)
Marking
.EC*
(3)
Shipping
5000/Reel&Tape
Symbol
V
F
I
R
C
J
R
θ(J-L)
Condition
I
F
=3.0A
V
R
=40V
V
R
=4V, F=1MHz
Junction to Lead (Fig.2)
220
17
Min.
Typ.
Max.
0.50
0.5
Unit
V
mA
pF
K/W
Note1: Pulse width=8.3ms, single pulse;
Note2: Single Pulse, test Tp=380us;
Note3: * =Month code (A~Z); .EC =Device code；
Will Semiconductor Ltd.
1
May, 2014 - Rev. 1.5
WSB5511M
Typical characteristics
(Ta=25
o
C, unless otherwise noted)
100000
+150 C
o
Reverse Current(uA)
1
Forward Current(A)
10000
1000
100
10
1
0.1
0.01
+125 C
+85 C
o
o
+125 C
+85 C
o
o
+65 C
o
0.1
+65 C
o
+25 C
o
+25 C
0C
o
o
0.01
0C
o
-50 C
o
-50 C
o
1E-3
0.0
0.2
0.4
0.6
1E-3
5
10
15
20
25
30
35
40
Forward Voltage(V)
Reverse Voltage(V)
Fig.1 Forward voltage vs. Forward current
Fig.2 Reverse current vs. Reverse voltage
4
Average Forward Current(A)
1000
800
600
400
200
0
3
C
j
(pF)
2
1
0
0
25
50
75
100
o
125
150
0
5
10
15
20
25
Lead temperature( C)
Reverse Voltage(V)
Fig.3 Maximum Forward Current Derating Curve
Fig.4 Junction capacitance vs. Reverse voltage
Will Semiconductor Ltd.
2
May, 2014 - Rev. 1.5
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