SRV05-4
Low Capacitance TVS Array
Description
The SRV05-4 is low capacitance transient voltage suppressor array for
high speed data interface that designed to protect sensitive electronics
from damage or latch-up due to ESD lightning, and other voltage induced
transient events. All pins are rated to withstand 15kV ESD pulses using the
IEC 61000-4-2 contact discharge method, which can meet the requirement
of level 4.
6
5
4
S
Applications
1
2
3
Feature
350W peak pulse power (t
P
= 8/20μs)
SOT-23-6L package
Working voltage: 5.0V
Low clamping voltage
Low capacitance
RoHS compliant transient protection for high speed data
lines to IEC61000-4-2(ESD)±15kV(air),±8kV(contact)
USB 2.0 power & data line protection
DVI & HDMI port protection
Serial ATA port protection
Mobile handsets
Digital cameras and camcorders
PDA & MP3 players
Digital TV and set-top boxes
Other portable electronic components
Mechanical Characteristics
Lead finish:100% matte Sn(Tin)
Mounting position: Any
Qualified max reflow temperature:260℃
Device meets MSL 1 requirements
Pure tin plating: 7 ~ 17 um
Pin flatness:≤3mil
Electronics Parameter
Symbol
V
RWM
I
R
V
BR
I
T
I
PP
V
C
P
PP
C
J
I
F
V
F
Parameter
Peak Reverse Working Voltage
Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Peak Pulse Power
Junction Capacitance
Forward Current
Forward Voltage @ I
F
I
PP
V
C
V
BR
V
RWM
I
R
V
F
I
T
I
F
I
V
Rev.06
1
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Low Capacitance TVS Array
Electrical characteristics per line@( unless otherwise specified)
Parameter
Peak Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Forward Voltage
Clamping Voltage
Clamping Voltage
Peak Pulse Current( t
p
=8/20μs))
Junction Capacitance
SRV05-4
Symbol
V
RWM
V
BR
I
R
V
F
V
C
V
C
I
PP
C
J
Conditions
Min.
Typ.
Max.
5
Units
V
V
I
t
= 1mA
V
RWM
=5.0V, T=25℃
I
T
=15mA
I
PP
= 1A,
t
P
= 8/20μs
6
1
1.2
12.5
28.0
12
3
μA
V
V
V
A
pF
I
PP
=5A, t
P
= 8/20μs
t
P
= 8/20μs
0V, f = 1MHz
Absolute maximum rating@25℃
Rating
Peak Pulse Power (t
p
=8/20μs)
Operating Temperature
Storage Temperature
Symbol
P
pp
T
J
T
STG
Value
350
-55 to +150
-55 to +150
Units
W
℃
℃
Typical Characteristics
t
f
=8μs
I
PP
100
80
60
40
20
0
0
5
Test
Waveform
Parameters
t
f
=8us
t
p
=20us
100
% Of Rated Power
80
60
40
20
0
I
PP
– Peak Pulse Current - % of
t
P
=20μs(I
PP
/2)
10
15
t - Time -μs
20
25
30
0
25
50
75
100
125
150
T
L
– Lead Temperature -
℃
Fig 1.Pulse Waveform
Fig 2.Power Derating Curve
Rev.06
2
www.prisemi.com
Low Capacitance TVS Array
10000
SRV05-4
Peak Pulse Power (W)
1000
100
10
1
Fig 3. Non Repetitive Peak Pulse Power vs. Pulse time
10
100
Pulse Duration(us)
1000
Solder Reflow Recommendation
Peak Temp=257℃, Ramp Rate=0.802deg.
℃/sec
280
240
200
160
120
80
40
0
0
30
60
90
120
150
180
210
240
270
300
330
360
390
420
450
480
Time (sec)
PCB Design
For TVS diodes a low-ohmic and low-inductive path to chassis earth is absolutely mandatory in order to achieve good ESD
protection. Novices in the area of ESD protection should take following suggestions to heart:
Do not use stubs, but place the cathode of the TVS diode directly on the signal trace.
Do not make false economies and save copper for the ground connection.
Place via holes to ground as close as possible to the anode of the TVS diode.
Use as many via holes as possible for the ground connection.
Keep the length of via holes in mind! The longer the more inductance they will have.
Rev.06
3
www.prisemi.com
FPGA/CPLD
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