PESDNC2XD3V3U
ESD Protector
Description
The PESDNC2XD3V3U protects sensitive semiconductor components from
damage or upset due to electrostatic discharge (ESD) and other voltage induced
transient events. They feature large cross-sectional area junctions for conducting
high transient currents, offer desirable electrical characteristics for board level
protection, such as fast response time, low operating voltage. It gives designer
the flexibility to protect one unidirectional line in applications where arrays are not
practical.
Feature
DFN0603-2L package
Replacement for MLV(0201)
Bidirectional configurations
Response time is typically < 1 ns
Low clamping voltage
RoHS compliant
Transient protection for data lines to IEC 61000-4-2(ESD)
±30KV(air), ±30KV(contact).
Applications
Cellular phones
Portable devices
Digital cameras
Power supplies
Mechanical Characteristics
Lead finish:100% matte Sn(Tin)
Mounting position: Any
Qualified max reflow temperature:260℃
Device meets MSL 2 requirements
Pure tin plating: 7 ~ 17 um
Pin flatness:≤3mil
Electronics Parameter
Symbol
V
RWM
I
R
V
BR
I
T
I
PP
V
C
P
PP
C
J
I
F
V
F
Parameter
Peak Reverse Working Voltage
Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Peak Pulse Power
Junction Capacitance
Forward Current
Forward Voltage @ I
F
V
C
V
BR
V
RWM
I
F
I
V
I
R
V
F
I
T
I
PP
Rev.06.1
1
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ESD Protector
PESDNC2XD3V3U
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Peak Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
V
C
C
j
Conditions
Min.
Typ.
Max.
3.3
Units
V
V
I
t
= 1mA
V
RWM
=3.3V
I
PP
= 1A
I
PP
= 6A
V
R
=0V
T=25℃
5
1
7.0
9.6
39
μA
V
V
pF
t
P
= 8/20μs
t
P
= 8/20μs
f = 1MHz
Absolute maximum rating@25℃
Rating
Peak Pulse Power (t
p
=8/20μS)
Operating Temperature
Storage Temperature
Symbol
P
pp
T
J
T
STG
Value
60
-55 to +150
-55 to +150
Units
W
℃
℃
Rev.06.1
2
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ESD Protector
Typical Characteristics
I
PP
100
80
60
t
P
=20μs(I
PP
/2)
40
20
0
0
5
10
15
20
25
30
t - Time -μs
% Of Rated Power
t
f
=8μs
100
80
60
40
20
0 0
PESDNC2XD3V3U
I
PP
– Peak Pulse Current - % of
25
50
75
100
125
150
T
L
– Lead Temperature -
℃
Fig 1.Pulse Waveform
10
Pulse waveform: tp=8/20us
8
C-Junction capacitance (pF)
V
C
-Clamping Voltage (V)
40
50
Fig 2.Power Derating Curve
6
30
4
20
2
10
0
0
1.4
2.8
4.2
I
PP
-Peak pulse current (A)
5.6
7
0
0
0.48
1.44
2.4
V
R
-Reverse voltage (V)
3.36.
Fig 3. Clamping voltage vs. Peak pulse current
Fig 4. Capacitance vs. Reveres voltage
1000
Peak Pulse Power (W)
100
10
0
0
10
100
Pulse Duration(us)
1000
Fig 5. Non Repetitive Peak Pulse Power vs. Pulse time
Rev.06.1
3
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ESD Protector
Solder Reflow Recommendation
Peak Temp=257℃, Ramp Rate=0.802deg.
℃/sec
280
PESDNC2XD3V3U
240
200
160
120
80
40
0
0
30
60
90
120
150
180
210
240
270
300
330
360
390
420
450
480
Time (sec)
PCB Design
For TVS diodes a low-ohmic and low-inductive path to chassis earth is absolutely mandatory in order to achieve good ESD
protection. Novices in the area of ESD protection should take following suggestions to heart:
Do not use stubs, but place the cathode of the TVS diode directly on the signal trace.
Do not make false economies and save copper for the ground connection.
Place via holes to ground as close as possible to the anode of the TVS diode.
Use as many via holes as possible for the ground connection.
Keep the length of via holes in mind! The longer the more inductance they will have.
Rev.06.1
4
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ESD Protector
Product dimension (DFN0603-2L)
PESDNC2XD3V3U
D
L1
E
B
L2
E
H1
F1
H2
F2
A
Millimeters
Dim
MIN
A
B
D
E
F1
F2
L1
L2
H1
H2
0.290
0.210
0.570
0.270
0.140
0.140
0.015
0.015
0.030
0.030
Typ.
0.300
0.240
0.600
0.300
0.170
0.170
0.030
0.030
0.045
0.045
MAX
0.325
0.270
0.630
0.330
0.200
0.200
0.045
0.045
0.060
0.060
Ordering information
Device
PESDNC2XD3V3U
Package
DFN0603-2L (Pb-Free)
Shipping
10000 / Tape & Reel
Rev.06.1
5
www.prisemi.com
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