上海双岭电子有限公司
CC4019
QUAD AND/OR SELECT GATE
s
s
s
s
s
s
s
MEDIUM-SPEED OPERATION
t
PD
= 60ns (Typ.) at V
DD
= 10V
QUIESCENT CURRENT SPECIFIED UP TO
20V
STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
5V, 10V AND 15V PARAMETRIC RATINGS
INPUT LEAKAGE CURRENT
I
I
= 100nA (MAX) AT V
DD
= 18V T
A
= 25°C
100% TESTED FOR QUIESCENT CURRENT
MEETS ALL REQUIREMENTS OF JEDEC
JESD13B ” STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES”
DIP
ORDER CODES
PACKAGE
DIP
TUBE
CC4019
T&R
DESCRIPTION
The CC4019 is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
The CC4019 types are comprised of four AND/
OR select gate configurations, each consisting of
two 2 input AND gates driving a single 2-input OR
gate. Selection is accomplished by control bits K
a
and K
b
. In addition to selection of either channel A
or channel B information, the control bits can be
applied simultaneously to accomplish the logical
A+B function.
PIN CONNECTION
1/3
CC4019
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
6, 4, 2, 15
7, 5, 3, 1
10, 11,12, 13
9, 14
8
16
SYMBOL
A1 to A4
B1 to B4
D1 to D4
K
a
, K
b
V
SS
V
DD
NAME AND FUNCTION
Data Inputs
Data inputs
Data Outputs
Control bits
Negative Supply Voltage
Positive Supply Voltage
TRUTH TABLE
CONTROL
Ka
Kb
X
X
H
H
L
INPUTS
OUTPUT
A1 to A4 B1 to B4 D1 to D4
H
L
X
X
X
X
X
H
L
X
H
L
H
L
L
LOGIC DIAGRAM
H
H
X
X
L
X : Don”t Care
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DD
V
I
I
I
P
D
T
op
T
stg
Supply Voltage
DC Input Voltage
DC Input Current
Power Dissipation per Package
Power Dissipation per Output Transistor
Operating Temperature
Storage Temperature
Parameter
Value
-0.5 to +20
-0.5 to V
DD
+ 0.5
±
10
200
100
-55 to +125
-65 to +150
Unit
V
V
mA
mW
mW
°C
°C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to V
SS
pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
DD
V
I
T
op
2/3
Supply Voltage
Input Voltage
Operating Temperature
Parameter
Value
3 to 1 8
0 to V
DD
-55 to 125
Unit
V
V
°C
CC4019
DC SPECIFICATIONS
Test Condition
Symbol
Parameter
V
I
(V)
0/5
0/10
0/15
0/18
0/5
0/10
0/15
5/0
10/0
15/0
0.5/4.5
1/9
1.5/13.5
4.5/0.5
9/1
13.5/1.5
2.5
4.6
9.5
13.5
0.4
0.5
1.5
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
V
O
(V)
|I
O
| V
DD
(µA) (V)
5
10
15
18
5
10
15
5
10
15
5
10
15
5
10
15
5
5
10
15
5
10
15
18
4.95
9.95
14.95
0.05
0.05
0.05
3.5
7
11
1.5
3
4
-1.36
-0.44
-1.1
-3.0
0.44
1.1
3.0
-3.2
-1
-2.6
-6.8
1
2.6
6.8
±10
-5
5
±0.1
7.5
-1.15
-0.36
-0.9
-2.4
0.36
0.9
2.4
±1
3.5
7
11
1.5
3
4
-1.1
-0.36
-0.9
-2.4
0.36
0.9
2.4
±1
T
A
= 25°C
Min.
Typ.
0.02
0.02
0.02
0.04
Max.
1
2
4
20
4.95
9.95
14.95
0.05
0.05
0.05
3.5
7
11
1.5
3
4
Value
-40 to 85°C
Min.
Max.
30
60
120
600
4.95
9.95
14.95
0.05
0.05
0.05
-55 to 125°C
Min.
Max.
30
60
120
600
Unit
I
L
Quiescent Current
µA
V
OH
High Level Output
Voltage
Low Level Output
Voltage
High Level Input
Voltage
Low Level Input
Voltage
Output Drive
Current
V
V
OL
V
V
IH
V
V
IL
V
I
OH
I
OL
Output Sink
Current
Input Leakage
Current
Input Capacitance
0/5
0/5
0/10
0/15
0/5
0/10
0/15
0/18
mA
mA
µA
pF
I
I
C
I
Any Input
Any Input
The Noise Margin for both ”1” and ”0” level is: 1V min. with V
DD
=5V, 2V min. with V
DD
=10V, 2.5V min. with V
DD
=15V
DYNAMIC ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C, C
L
= 50pF, R
L
= 200KΩ, t
r
= t
f
= 20 ns)
Test Condition
Symbol
Parameter
V
DD
(V)
t
PLH
t
PHL
Propagation Delay Time
5
10
15
5
10
15
Min.
Typ.
150
60
50
100
50
40
Max.
300
120
100
200
100
80
ns
Value (*)
Unit
t
TLH
t
THL
Output Transition Time
ns
(*) Typical temperature coefficient for all V
DD
value is 0.3 %/°C.
3/3
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