LITE-ON
SEMICONDUCTOR
STPR805DF thru 860DF
REVERSE VOLTAGE -
50
to
600
Volts
FORWARD CURRENT -
8.0
Amperes
SUPER FAST
GLASS PASSIVATED RECTIFIERS
FEATURES
Glass passivated chip
Superfast switching time for high efficiency
Low forward voltage drop and high current capability
Low reverse leakage current
High surge capacity
Plastic package has UL flammability classification
94V-0
B
C
K
PIN
1
2
TO-220AC
L
M
D
A
E
TO-220AC
MAX.
MIN.
DIM.
14.22
15.88
A
10.67
9.65
B
3.43
2.54
C
6.86
D
5.84
9.28
8.26
E
F
G
I
H
J
N
G
H
-
12.70
6.35
14.73
F
MECHANICAL DATA
Case : TO-220AC molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
PIN 1
PIN 2
CASE
5.33
4.83
0.51
1.14
I
J
0.30
0.64
K
3.53
4.09
L
3.56
4.83
M
1.14
1.40
2.92
2.03
N
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
STPR STPR STPR STPR STPR STPR STPR STPR
UNIT
805DF 810DF 815DF 820DF 830DF 840DF 850DF 860DF
V
50
100
150
200
300
400
500
600
V
35
70
105
140
210
280
350
420
50
100
150
200
300
400
500
600
V
8
A
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
@T
C
=
100 C
Peak Forward Surge Current
8.3ms single half-sine-wave
superimposed on rated load (JEDEC Metod)
Maximum Forward Voltage at 8.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction
Capacitance (Note 1)
Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
I
FSM
125
A
V
F
I
R
C
J
T
RR
R
0JC
0.95
5
500
110
35
2.5
-55 to +150
1.3
1.5
V
uA
@T
J
=25 C
@T
J
=100 C
60
50
pF
ns
C/W
T
J
,T
STG
C
REV. 3, 13-Sep-2001, KTGA04
NOTES :1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Reverse Recovery Test Conditions:I
F
=0.5A,I
R
=1.0A,I
RR
0.25A.
3.Thermal Resistance Junction to Case.
RATING AND CHARACTERISTIC CURVES
STPR805DF thru STPR860DF
AVERAGE FORWARD CURRENT
AMPERES
10
WITH HEAT SINK T
C
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
150
125
100
75
50
25
0
1
2
5
10
20
50
100
8
6
4
FREE AMBIENT T
A
2
RESISTIVE OR INDUCTIVE LOAD
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
0
0
25
50
75
100
125
150
CASE TEMPERATURE , C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
100
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
T
J
= 125 C
INSTANTANEOUS
REVERSE CURRENT ,(uA)
INSTANTANEOUS FORWARD CURRENT ,(A)
10
T
J
= 125 C
50-200V
300-400V
500-600V
10
T
J
= 100 C
1.0
T
J
= 75 C
1.0
T
J
= 25 C
0.1
T
J
= 25 C
0.01
0
20
40
60
80
100
120
140
0.1
0
0.2
0.4
0.6
0.8
1.0
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
PULSE WIDTH 300us
2% Duty cycle
1.2
1.4
1.6
1.8
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
CAPACITANCE , (pF)
50-400V
100
500-600V
T
J
= 25 C, f= 1MHz
10
0.1
1
4
10
100
REVERSE VOLTAGE , VOLTS
REV. 3, 13-Sep-2001, KTGA04
NXP MCU
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