DONGGUAN NANJING ELECTRONICS LTD.,
SOD-323 Plastic-Encapsulate Diodes
B5817WS-5819WS
FEATURES
For use in low voltage, high frequency inverters
Free wheeling, and polarity protection applications
MARKING:
B5817WS:SJ
B5818WS:SK
B5819WS:SL
SCHOTTKY BARRIER DIODE
SOD-323
The marking bar indicates the cathode
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Non-repetitive peak reverse voltage
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current
Non-repetitive Peak
Forward
Surge Current
@t=8.3ms
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
I
FRM
Pd
R
θJA
T
J
T
STG
B5817WS
20
20
14
B5818WS
30
30
21
1
B5819WS
40
40
28
Unit
V
V
V
A
A
Repetitive peak forward current
Power dissipation
Thermal resistance junction to
ambient
Junction temperature
Storage temperature
1.5
250
400
125
-55~+150
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta= 25℃ unles s other wise specified)
Pa
rameter
Symbol
V
(BR)
V
R
=20V
V
R
=30V
V
R
=40V
B5817WS
B5818WS
B5819WS
Test c onditions
I
R
= 1mA
Reverse breakdown voltage
B5817WS
B5818WS
B5819WS
B5817WS
B5818WS
B5819WS
I
F
=1A
I
F
=3A
Forward voltage
V
F
I
F
=1A
I
F
=3A
I
F
=1A
I
F
=3A
Diode capacitance
C
D
V
R
=4V, f=1MHz
Min
20
30
40
1
0.45
0.75
0.55
0.875
0.6
0.9
120
Max
Unit
V
Reverse voltage leakage current
I
R
mA
V
V
V
pF
1
C,Oct,2014
SOD-323 Package Outline Dimensions
Symbol
A
A1
A2
b
c
D
E
E1
L
L1
θ
Dimensions In Millimeters
Min
Max
1.000
0.000
0.100
0.800
0.900
0.250
0.350
0.080
0.150
1.200
1.400
1.600
1.800
2.500
2.700
0.475 REF
0.250
0.400
0°
8°
Dimensions In Inches
Min
Max
0.039
0.000
0.004
0.031
0.035
0.010
0.014
0.003
0.006
0.047
0.055
0.063
0.071
0.098
0.106
0.019 REF
0.010
0.016
0°
8°
SOD-323 Suggested Pad Layout
3
C,Oct,2014
stm32/stm8
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