DONGGUAN NANJING ELECTRONICS LTD.,
SOT-223 Plastic-Encapsulate Transistors
PZTA44
TRANSISTOR (NPN)
SOT-223
FEATURES
Low current : 300mA(max)
High voltage: V
CEO
=400V
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Current -Pulsed
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
400
400
6
200
300
1
150
-65~150
Unit
V
V
V
mA
mA
W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
h
FE(4)
V
CE(sat)
Collector-emitter saturation voltage
V
CE(sat)
V
CE(sat)
Base-emitter saturation voltage
Transition frequency
Collector ca pacitance
Emitter capacitance
V
BE(sat)
f
T
C
C
C
e
Test conditions
I
C
=100μA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=100μA,I
C
=0
V
CB
=400V,I
E
=0
V
EB
=4V,I
C
=0
V
CE
=10V,I
C
=1mA
V
CE
=10V,I
C
=10mA
V
CE
=10V,I
C
=50mA
V
CE
=10V,I
C
=100mA
I
C
=1mA,I
B
=0.1mA
I
C
=10mA,I
B
=1mA
I
C
=50mA,I
B
=5mA
I
C
=10mA,I
B
=1mA
V
CE
=10V,I
C
=10mA,f=100MHz
V
CB
=20V,I
E
=0,f=1MHz
V
EB
=0.5V,I
C
=0,f=1MHz
20
7
180
40
50
45
40
0.4
0.5
0.75
0.85
V
V
V
V
MHz
pF
pF
200
Min
400
400
6
0.1
0.1
Typ
Max
Unit
V
V
V
μA
μA
C,Jun,2013
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