20V N-Channel MOSFET
SSF2356G8
Main Product Characteristics
V
DSS
R
DS(on)
I
D
20V
0.4Ω (typ.)
0.54A
SOT-363
Marking and Pin
Assignment
Schematic Diagram
Features and Benefits
Advanced MOSFET process technology
Ideal for PWM, load switching and general
purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150°C operating temperature
Description
The SSF2356G8 utilizes the latest processing techniques to achieve high cell density low on-
resistance and high repetitive avalanche rating. These features make this device extremely efficient
and reliable for use in power switching applications and a wide variety of other applications.
Absolute Max Rating
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
Limit
20
±8
0.54
1.5
0.2
-55 To 150
Unit
V
V
A
A
W
°C
Thermal Resistance
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
625
°C/W
1/5
20V N-Channel MOSFET
SSF2356G8
Conditions
V
GS
= 0V, I
D
= 250μA
V
GS
=4.5V,I
D
= 0.54A
V
GS
=2.5V,I
D
= 0.5A
V
GS
=1.8V,I
D
= 0.35A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 20V,V
GS
= 0V
V
GS
= ±4.5V
V
GS
= ±8V
V
GS
= 0V
V
DS
= 16V
ƒ = 1MHz
Electrical Characteristics
(T
A
=25°C
unless otherwise specified)
Symbol
V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
20
—
—
—
0.5
—
—
—
—
—
—
Typ.
—
0.4
0.5
0.7
—
—
—
—
87
17
10
Max.
—
0.55
0.7
0.9
1.0
1
±1
±10
—
—
—
pF
Units
V
Ω
Ω
Ω
V
μA
μA
Source-Drain Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Min.
—
—
—
Typ.
—
—
—
Max.
0.54
1.5
1.3
Units
A
A
V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
S
=0.12A, V
GS
=0V
2/5
20V N-Channel MOSFET
SSF2356G8
Test
Circuits
and Waveforms
E
AS
Test Circuit
Gate Charge Test Circuit
Switching Time Test Circuit
Switching Waveforms
Notes:
①Calculated
continuous current based on maximum allowable junction temperature.
②Repetitive
rating; pulse width limited by max. junction temperature.
③The
power dissipation P
D
is based on max. junction temperature, using junction-to-case thermal
resistance.
④
The value of
R
θJA
is measured with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a
still air environment with T
A
=25°C.
3/5
20V N-Channel MOSFET
SSF2356G8
Mechanical Data
SOT-363(SC-88) PACKAGE OUTLINE DIMENSION
4/5
20V N-Channel MOSFET
SSF2356G8
Ordering and Marking Information
Device Marking: MK1
Package (Available)
SOT-363 (SC-88)
Operating Temperature Range
C : -55 to
150°C
Devices per Unit
Package
Type
SOT-363
Units/
Tape
3000
Tapes/Inner
Box
10
Units/Inner Inner
Box
Boxes/Carton
Box
30000
12
Units/
Carton
Box
360000
Reliability Test Program
Test Item
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Conditions
T
j
=125°C to 150°C
@ 80% of Max
V
DSS
/V
CES
/V
R
T
j
=150°C @ 100%
of Max V
GSS
Duration
168 hours
500 hours
1000 hours
168 hours
500 hours
1000 hours
Sample Size
3 lots x 77 devices
3 lots x 77 devices
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5/5
Doc.USSSF2356G8x1.1
嵌入式系统
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