RLS245
!
Silicon Epitaxial Planar
High Voltage Switching Diode
LL-34
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Rectified Forward Current
Maximum Forward Current
Surge Forward Current at t < 1 s and T
j
= 25 C
Junction Temperature
Storage Temperature Range
o
Symbol
V
RM
V
R
I
F(AV)
I
FM
I
FSM
T
j
T
stg
Value
250
220
200
625
1000
175
- 65 to + 175
Unit
V
V
mA
mA
mA
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 200 mA
Leakage Current
at V
R
= 220 V
Reverse Breakdown Voltage
at I
R
= 100
μA
Capacitance
at V
F
= V
R
= 0, f = 1 MHz
Reverse Recovery Time
from I
F
= I
R
= 20 mA
Symbol
V
F
I
R
V
BR
C
tot
t
rr
Min.
-
-
250
-
-
Max.
1.5
10
-
3
75
Unit
V
μA
V
pF
ns
RATING AND CHARACTERISTIC CURVES (RLS245)
!
Electrical characteristic curves
(Ta=25°C)
200
100
10µ
50
20
10
5
2
1
0.5
0.2
0
CAPACITANCE BETWEEN TERMINALS : C
T
(pF)
100˚C
1.1
FORWARD CURRENT : I
F
(mA)
REVERSE CURRENT : I
R
(A)
1.0
75˚C
1µ
0.9
50˚C
0.8
25˚C
100n
Ta=25˚C
Ta= 1
75˚C
25˚C
−2
5˚C
0.7
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE : V
F
(V)
10n
0
50
100
150
200
250
300
350
0.6
0
1
2
3
4
5
REVERSE VOLTAGE : V
R
(V)
REVERSE VOLTAGE : V
R
(V)
Fig. 1 Forward characteristics
Fig. 2 Reverse characteristics
Fig. 3 Capacitance between
terminals characteristics
140
REVERSE RECOVERY TIME : t
rr
(ns)
14
SURGE CURRENT : Isurge (A)
120
100
80
60
40
20
0
0
I
R
=10mA
I
rr
=1mA
12
10
8
6
4
2
0
5
10
15
20
25
30
35
1
10
100
1000
FORWARD CURRENT : I
F
(mA)
PULSE WIDTH : Tw (ms)
Fig. 4 Reverse recovery time
characteristics
Fig.5 Surge current characteristics
0.01µF
D.U.T.
5kΩ
PULSE GENERATOR
OUTPUT 50Ω
50Ω
SAMPLING
OSCILLOSCOPE
Fig. 6
Reverse recovery time (t
rr
) measurement circuit
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