-20V P-Channel Enhancement Mode MOSFET
The STP2301 is the P-Channel logic enhancement
mode power field effect transistor is produced using
high cell density. advanced trench technology to
provide excellent R
DS(ON)
. .low gate charge and
operation gate as 2.5V.
This device is suitable for use as a load switch or
other general applications.
STP2301S-TRG ROHS Compliant This is Halogen
Free
-20V/-3.0A, R
DS(ON)
=80m (typ.)@V
GS
=-4.5V
-20V/-2.0A, R
DS(ON)
=110m (typ.)@V
GS
=-2.5V
Super high density cell design for extremely low
Gate Charge
Exceptional on-resistance and Maximum DC
current capability
Power Management in Note book
Portable Equipment
Networking DC-DC Power System
Load Switch
Drain
D
Source
Gate
G
SOT-23
Top View
S
ST P 2301 S - TR G
a
b
c
d
e
f
a : Company name.
b : Channel type.
c : Product Serial number.
d : Package Code
e : Handling Code
f: Lead Plating Code
G : Lead-free product.
This product is Halogen Free
Part Number
STP2301S-TRG
Package Code
S : SOT-23
Handling Code
TR : Tape&Reel
Shipping
3K/Reel
Year Code : 0 ~ 9, 2010 : 0
Week Code : A(1~2) ~ Z(53~54)
SOT-23 : Only available in tape and reel packaging.
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
T
J
T
STG
Drain-Source Voltage
Gate-Source Voltage
Parameter
Typical
-20
±12
V
GS
=-10V
-3.0
-2.8
-10
1.25
0.8
-55 to150
-55 to150
Unit
V
V
A
A
A
W
°C
°C
Continuous Drain Current (T
C
=25°C)
A
Continuous Drain Current (T
C
=70°C)
A
Pulsed Drain Current
B
Power Dissipation
Operation Junction Temperature
Storage Temperature Range
T
A
=25°C
T
A
=70°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Symbol
R
R
JA
JC
Parameter
Thermal Resistance-Junction to Ambient
A
Thermal Resistance Junction to Lead
A
Steady-State
Steady-State
Typ
-
-
Max
125
85
Unit
°C/W
°C/W
Symbol
Static Parameters
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
R
DS(ON)
G
fs
V
SD
I
S
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Note:
Parameter
Condition
Min
-20
-0.5
Typ
Max
Unit
V
Drain-Source Breakdown Voltage V
GS
=0V,I
D
=-250 A
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-source On-Resistance
B
Forward Transconductance
Diode Forward Voltage
Continuous Source Current
AD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
V
DS
=V
GS
,I
D
=-250 A
V
DS
=0V,V
GS
=±12V
V
DS
=-20V,V
GS
=0V, T
J
=25
°C
V
DS
=-20V,V
GS
=0V, T
J
=55
°C
V
GS
=-4.5V,I
D
=-3.0A
V
GS
=-2.5V,I
D
=-2.0A
V
DS
=-5V,I
D
=-3.0A
I
S
=-1.0A,V
GS
=0V
-1.2
±100
-1
80
110
7.5
-0.7
-5
98
130
V
nA
A
m
S
Source-Drain Doide
-1.2
-6
9.4
1.2
3.5
521
81
56
7.2
16
21
9
nS
pF
nC
V
A
Dynamic Parameters
V
DS
=-12V
V
GS
=-4.5V
I
D
-3.0A
V
DS
=-10V
V
GS
=0V
f=1MH
z
V
DD
=-12V
I
D
=-1A
V
GEN
=-4.5V
R
G
=3.3
Turn-Off Time
A. The value of R
JA
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment
with T
A
=25 C.
B. The data tested by pulsed , pulse width
300uS , duty cycle
2%
C. The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH.
D. The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Output Characteristics
10
8
6
4
2
0
0
1
2
3
V
GS
=-3.0V
V
GS
=-2.5V
V
GS
=-1.8V
4
5
-10V
-8V
-6V
V
GS
=-5.0V
V
GS
=-4.5V
200
180
160
140
120
100
80
60
40
20
0
Drain-Source On Resistance
I
D
=-3A
125
25
1
2
3
4
5
6
7
8
9 10
-V
DS
-Drain Source Voltage(V)
-V
GS
-Gate Source Voltage(V)
Drain Source On Resistance
210
190
170
150
130
110
90
70
50
30
0
6
5
Drain Source On Resistance
V
GS
=2.5V
4
3
2
T
J
=150°C
T
J
=25°C
V
GS
=4.5V
1
0
2
4
6
8
10
0
0.3
0.6
0.9
1.2
-I
D
-Drain Current(A)
-VSD-Source Drain Voltage(V)
Gate Charge
4.5
V
DS
=-10V
I
D
=-3A
3
1.8
1.6
1.4
1.2
1
Drain Source On Resistance
I
D
=-3A
V
GS
=-4.5V
1.5
0.8
0.6
0.4
0
0
2
4
6
8
10
-Q
G
-Gate Charge(nC)
-50 -25
0
25
50
75 100 125 150
T
J
-Junction Temperature(°C)
Capacitance
Source Drain Diode Forward
10
800
700
600
500
400
300
200
100
0
0
Ciss
125°C
1
25°C
Coss
Crss
5
10
15
20
25
0.1
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
-V
SD
-Source Drain Voltage(V)
Drain Current
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
20
40
60
80
100 120 140 160
-V
DS
-Drain Source Voltage(V)
Power Dissipation
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
20
40
60
80 100 120 140 160
T
J
-Junction Temperature(°C)
T
J
-Junction Temperature(°C)
Thermal Transient Impedance
10
Duty=0.5, 0.3, 0.1, 0.05, 0.02, 0.01
1
0.1
0.01
0.001
0.0001
Single Pulse
0.001
0.01
0.1
1
10
Square Wave Pulse Duration(Sec)
100
1000
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