-20V P-Channel Enhancement Mode MOSFET
The STP3415 is the P-Channel logic enhancement
mode power field effect transistor is produced using
high cell density. advanced trench technology to
provide excellent R
DS
(ON).low gate charge and
operation with gate voltage as 1.5V
This device is suitable for use as a load switch or in
applications.
STP3415S-TRG ROHS Compliant This is Halogen
Free
-20V/-4.0A, R
DS(ON)
=45m
-20V/-4.0A, R
DS(ON)
=54m
-20V/-2.0A, R
DS(ON)
=68m
-20V/-1.0A, R
DS(ON)
=92m
(typ.)@V
GS
=-4.5V
(typ.)@V
GS
=-2.5V
(typ.)@V
GS
=-1.8V
(typ.)@V
GS
=-1.5V
Super high density cell design for extremely low
R
DS(ON)
Exceptional on-resistance and Maximum DC
current capability
ESD Protected : 3KV
Cellular/Portable
Load Switch
D
Drain
Source
Gate
G
S
SOT-23L
Top View
ST P 3415 E S - TR G
a
b
c
d e
f
g
a : Company name.
b : Channel type.
c : Product Serial number.
d : ESD (Blank for product without ESD).
e : Package Code
f : Handling Code
g : Lead Plating Code
G : Lead-free product.
This product is Halogen Free
Part Number
STP3415ES-TRG
Package Code
S : SOT-23L
Handling Code
TR : Tape&Reel
Shipping
3K/Reel
Year Code : 0 ~ 9, 2010 : 0
Week Code : A(1~2) ~ Z(53~54)
SOT-23L : Only available in tape and reel packaging.
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
T
J
T
STG
Drain-Source Voltage
Gate-Source Voltage
Parameter
Typical
-20
±8
V
GS
=-8V
-4.0
-3.5
-20
1.5
0.9
-55 to150
-55 to150
Unit
V
V
A
A
A
W
°C
°C
Continuous Drain Current (T
C
=25°C)
A
Continuous Drain Current (T
C
=70°C)
A
Pulsed Drain Current
B
Power Dissipation
Operation Junction Temperature
Storage Temperature Range
T
A
=25°C
T
A
=70°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Symbol
R
R
JA
JL
Parameter
Thermal Resistance-Junction to Ambient
Thermal Resistance Junction to Lead
Steady-State
Steady-State
Typ
-
-
Max
140
80
Unit
°C/W
°C/W
Symbol
Parameter
Condition
Min
Typ
Max
Unit
Static Parameters
Drain-Source Breakdown
V
(BR)DSS
Voltage
V
GS(th)
Gate Threshold Voltage
I
GSS
I
DSS
Gate Leakage Current
V
GS
=0V,I
D
=-250 A
V
DS
=V
GS
,I
D
=-250 A
-20
-0.3
-1.0
±10
-1
V
V
A
A
-5
44
53
66
85
22
54
62
75
110
R
DS(ON)
G
fs
V
SD
I
S
Q
g
(-4.5V
)
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
=0V,V
GS
=±8V
V
DS
=-20V,V
GS
=0V
Zero Gate Voltage, Drain-Source T
J
=25°C
Leakage Current
V
DS
=-20V,V
GS
=0V
T
J
=55
°C
V
GS
=-4.5V,I
D
=-4.0A
V
GS
=-2.5V,I
D
=-4.0A
Drain-source On-Resistance
B
V
GS
=-1.8V,I
D
=-2.0A
V
GS
=-1.5V,I
D
=-1.0A
Forward Transconductance
V
DS
=-5V,I
D
=-4.0A
Diode Forward Voltage
Continuous Source Current
AD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
I
S
=-1.0A,V
GS
=0V
m
S
V
A
Source-Drain Doide
-0.67 -1.0
-6
11.1
3.1
2.4
989
167
75.5
712
1386
9.1
4
nS
pF
nC
Dynamic Parameters
V
DS
=-10V
V
GS
=-4.5V
I
D
-4.0A
V
DS
=-10V
V
GS
=0V
f=1MH
z
V
DD
=-10V
I
D
=-1A
V
GEN
=-4.5V
R
G
=2.5
A
Note:
A. The value of R
JA
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment
with T
A
=25 C.
300uS , duty cycle
2%
B. The data tested by pulsed , pulse width
C. The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH.
D. The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Output Characteristics
35
30
25
20
15
10
5
0
0
1
2
3
4
5
-V
DS
-Drain Source Voltage(V)
V
GS
=-2.5V
-4.5V
V
GS
=-3V
Drain-Source On Resistance
120
100
80
60
40
125°C
25 C
V
GS
=-1.8V
V
GS
=-1.5V
20
0
2
4
6
8
-V
GS
-Gate Source Voltage(V)
Drain Source On Resistance
100
80
60
40
V
GS
=-4.5V
V
GS
=-1.5V
V
GS
=-1.8V
V
GS
=-2.5
Transfer Characteristics
15
12
9
6
3
0
125°C
25°C
20
1
2
4
6
8
10
-I
D
-Drain Current(A)
0
0.5
1
1.5
2
2.5
-V
GS
-Gate Source Voltage(V)
Gate Charge
6
5
4
3
2
1
0
0
2
2
4
6
8
10
12
Q
G
-Gate Charge(nC)
0.8
0
1.4
1.2
1
1.6
Drain Source Resistance
V
GS
=-2.5V, I
D
=-2.0A
V
GS
=-4.5V, I
D
=-4.0V
V
GS
=-1.8V, I
D
=-1.8A
25
50
75
100
125
150
Tj-Junction Temperature(°C)
Capacitance
1200
1000
800
600
400
200
Crss
Coss
Ciss
Source Drain Diode Forward
10
1
0.1
0.01
0.001
0.0001
0.00001
25°
125°C
0
0
4
8
12
16
20
-V
DS
-Drain Source Voltage(V)
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
-V
SD
-Source Drain Voltage(V)
Power Dissipation
4
3.5
3
2.5
2
1.5
1
0.5
0
0
20
40
60
80 100 120 140 160
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
20
Drain Current
40
60
80
100 120 140 160
T
J
-Junction Temperature(°C)
T
J
-Junction Temperature(°C)
Thermal Transient Impedance
10
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01
1
0.1
0.01
0.001
0.0001
Single Pulse
0.001
0.01
0.1
1
10
Square Wave Pulse Duration(Sec)
100
1000
能源基础设施
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