LTP60N10
N-Channel 100V Power MOSFET
Features:
•
Avalanche
energy specified
• Diode is characterized for use in bridge circuits
• Source to Drain diode recovery time comparable
to a discrete fast recovery diode.
Application
• DC to DC converter
• For high-frequency switching
• Synchronous rectification (S/R)
B
VDSS
=100V ,
R
DS(ON)
=15.8m ,
I
D
=60A
Absolute Maximum Ratings
(T
A
=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
a
Symbol
V
DSS
V
GS
T
C
=25°C
T
C
=100°C
I
D
I
DM
T
C
=25°C
T
C
=100°C
PD
T
J,
T
stg
E
AS
Limit
100
±25
60
44
240
150
75
-55 to175
540
Unit
V
V
A
A
W
℃
mJ
Operating Junction and Storage Temperature Range
Single Pulsed Avalanche Energy
Note:
a. Pulse width limited by safe operating area
b. Starting Tj=25℃, I
D
=60A, V
DD
=60V, L=0.1mH
b
Thermal Characteristics
Symbol
R
θJC
R
θJA
Characteris
Junction-to-Case
Junction-to-Ambient
Typ
----
-
----
-
Max.
1
48
Units
°C/W
Rev.0, Feb. 2012
LTP60N10
N-Channel 100V Power MOSFET
Electrical Characteristics
(T
A
=25℃Unless Otherwise Specified)
Symbol
STATIC
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(ON)
DYNAMIC
Qg
Qgs
Qgd
C
iss
C
oss
C
rss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DD
= 30 V, V
GEN
= 10 V,
R
G
= 6 , R
L
= 30 ,
I
DS
= 1 A
V
GS
=0V, V
DS
=50V,
f=1MHz
V
GS
=10V,V
DS
=50V,
I
D
=30A
-
-
-
-
-
-
-
-
-
-
38
11
12
2000
290
120
18
9
60
32
74
-
-
-
-
-
35
17
115
62
n
S
P
F
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Test Condition
V
GS
=0V,I
D
=250 A
V
DS
=V
GS
,I
D
=250 A
V
GS
=±25V
V
DS
=100V,V
GS
=0V
V
GS
=10V,I
D
=30A
Min.
100
2.0
Typ.
Max.
Unit
V
V
nA
A
m
--
--
--
4.0
±100
10
15.8
--
--
--
--
--
13
nC
t
d(on)
t
r
t
d(off)
t
r
Source-Drain Diode Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
Trr
Qrr
Characteristic
Continuous Source current
Pulsed Source Current
Diode Forward voltage
Reverse Recovery Time
d
e
Min.
Typ.
Max. Units
60
240
1.1
-
-
V
nS
uC
A
Test Condition
Integral reverse PN diode in The
MOSFET
I
S
=1A,V
GS
=0V
V
GS
= 0V, I
DS
=30A,V
DD
=25V
dI
SD
/ dt = 100A/uS
--
--
-
-
-
--
--
0.7
45
85
Reverse Recovery Charge
Note:
d. Pulse width limited by safe operating area
e. Pulsed: pulse duration=300 s, duty cycle 1.5%
Rev.0, Feb. 2012
LTP60N10
N-Channel 100V Power MOSFET
I
DS
=30A
Rev.0, Feb. 2012
LTP60N10
N-Channel 100V Power MOSFET
V
GS
=10V
I
DS
=30A
V
DS
=50V
I
DS
=30A
Rev.0, Feb. 2012
LTP60N10
N-Channel 100V Power MOSFET
Rev.0, Feb. 2012
下载中心专版
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
