2SD966
NPN Silicon Epitaxial Planar Transistor
for low-frequency power amplification and
stroboscope.
The transistor is subdivided into three groups P, Q
and R, according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (T
a
= 25
O
C)
Symbol
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Peak Collector Current
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V
CBO
V
CEO
V
EBO
I
CP
I
C
Pc
T
j
T
S
Value
40
20
7
8
5
1
150
-55 to +150
Unit
V
V
V
A
A
W
O
O
C
C
2SD966
Characteristics at T
amb
=25
O
C
Symbol
DC Current Gain
at V
CE
=2V, I
C
=0.5A
P
Q
R
at V
CE
=2V, I
C
=2A
Collector Cutoff Current
at V
CB
=10V
Emitter Cutoff Current
at V
EB
=7V
Collector Output Capacitance
at V
CB
=20V,f=1.0MHz
Collector to Emitter Voltage
at I
C
=1mA
Emitter to Base Voltage
at I
E
=10μA
Collector to Emitter Saturation Voltage
at I
C
=3A,I
B
=0.1A
Transition Frequency
at V
CB
=6V, I
E
=-50mA,f=200MHz
f
T
-
150
-
MHz
V
CE(sat)
-
-
1
V
V
EBO
7
-
-
V
V
CEO
20
-
-
V
Cob
-
-
50
pF
I
EBO
-
-
0.1
μA
I
CBO
-
-
0.1
μA
h
FE
h
FE
h
FE
h
FE
120
230
340
150
-
-
-
-
250
380
600
-
-
-
-
-
Min.
Typ.
Max.
Unit
2SD966
Pc-Ta
1.2
Collector power dissipation Pc (W)
I
C
-V
CE
2.4
Ta=25
o
C
I
B
=7mA
6mA
6
I
C
-V
BE
V
CE
=2V
25
o
C
1.0
2.0
5
Ta=75
o
C
Collector Current Ic (A)
-25
o
C
0.8
Collector Current Ic (A)
1.6
5mA
4mA
3mA
4
0.6
1.2
3
0.4
0.8
2mA
0.4
1mA
2
0.2
1
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta ( C)
o
0
0
0.4 0.8 1.2 1.6 2.0 2.4
Collector to emitter voltage V
CE
(V)
0
0
0.4
0.8
1.2
1.6
2.0
Base to emitter voltage V
BE
(V)
(v)
V
CE(sat)
-I
C
10
3
1
0.3
0.1
0.03
0.01
0.003
0.001
0.01 0.03
Ta=75
o
C
25
o
C
-25 C
o
h
FE
-I
C
I
C
/I
B
=30
Forward current transfer ratio h
FE
f
T
-I
E
V
CE
=2V
400
350
Transition frequency f
T
(MHz)
Collector to emitter saturation voltage V
CE(sat)
600
500
V
CB
=6V
Ta=25
o
C
300
250
200
150
100
50
0
-0.01 -0.03 -0.1 -0.3
400
Ta=75
o
C
300
25
o
C
-25
o
C
200
100
0.1
0.3
1
3
10
0
0.01 0.03
0.1
0.3
1
3
10
-1
-3
-10
Collector current Ic (A)
Collector current Ic (A)
Emitter current I
E
(A)
Cob-V
CB
100
Collector output capacitance C
ob
(pF)
I
E
=0
f=1MHz
o
Ta=25 C
80
60
40
20
0
1
3
10
30
100
Collector to base voltge V
CB
(V)
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
