25V N-Channel MOSFET
SSF2506
Main Product Characteristics
V
DSS
R
DS(on)
I
D
25V
4.1mΩ(Typ.)
60A
TO-252 (DPAK)
Features and Benefits
Advanced trench MOSFET process technology
Ideal for PWM, load switching and general
purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175°C operating temperature
Marking and Pin
Assignment
Schematic
D
iagram
Description
The SSFM2506 utilizes FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve
extremely low on-resistance, fast switching speed, and short reverse recovery time. These features make
this device extremely efficient and reliable for use in PWM, load switching, and a wide variety of other
applications.
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
I
SM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
V
DS
V
GS
dv/dt
E
AS
E
AR
I
AR
T
J
, T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
①
Continuous Drain Current, V
GS
@ 10V
①
Pulsed Drain Current
②
Pulsed Source Current (Body Diode)
②
Power Dissipation
③
Power Dissipation
③
Drain-Source Voltage
Gate-to-Source Voltage
Peak Diode Recovery Voltage
Single Pulse Avalanche Energy @ L=0.1mH
②
Repetitive Avalanche Energy
Avalanche Current @ L=0.1mH
②
Operating Junction and Storage Temperature Range
Max.
60
50
130
130
45
22
25
± 20
1.5
90
228
42
-55 to + 175
W
W
V
V
V/nS
mJ
A
°
C
A
Units
1/8
25V N-Channel MOSFET
SSF2506
Thermal Resistance
Symbol
Characteristics
Junction-to-Case
③
Junction-to-Ambient (t
≤ 10s)
④
Junction-to-Ambient (PCB mounted, steady-state)
④
Value
Unit
R
θJC
R
θJA
2.5
13
36
°C/W
°C/W
°C/W
Electrical Characteristics
(T
A
=25°C
Symbol
BV
DSS
Parameter
Drain-to-Source
Breakdown Voltage
Static Drain-to-Source
On-resistance
Min.
25
unless otherwise specified)
Typ.
—
Max.
—
Units
V
Conditions
V
GS
= 0V, I
D
= 250μA
V
GS
=10V
mΩ
I
D
= 30A
T
J
= 125 °C
V
DS
= VGS,
V
I
D
= 250μA
T
J
= 125°C
V
DS
= 25V,
μA
V
GS
= 0V
V
DS
= 25V, V
GS
= 0V,
T
J
= 55°C
V
GS
=20V
nA
V
GS
= -20V
I
D
= 30A,
nC
V
DS
=12.5V,
V
GS
= 10V
V
GS
=10V, V
DS
=12.5V,
ns
R
L
=0.42Ω,
R
GEN
=3Ω
V
GS
= 0V,
pF
V
DS
= 12.5V,
ƒ = 1.0MHz
Ω
V
GS
=0V,V
DS
=0V,
f=1MHz
R
DS(on
)
—
—
1.2
—
—
—
—
-100
—
—
—
—
—
—
—
—
—
—
—
4.1
6.5
1.9
1.2
—
—
—
—
6
—
2.5
—
10
50
100
—
40
6
15
—
—
—
—
—
—
—
—
V
GS(th)
Gate Threshold Voltage
I
DSS
Drain-to-Source
Leakage Current
Gate-to-Source
I
GSS
Forward Leakage
Gate-to-Source
Reverse Leakage
Total Gate Charge
Gate-to-Source charge
Gate-to-Drain("Miller")
Charge
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Resistance
Q
g
Q
gs
Q
gd
t
d(on
)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
35.8
3.8
13.1
10.5
65.7
27.0
8.2
1732
512
323
1.4
2/8
25V N-Channel MOSFET
SSF2506
Source-Drain Ratings and Characteristics
Symbol
I
S
V
SD
t
rr
Q
rr
Parameter
Maximum Body-Diode
Continuous Curren
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
—
—
—
—
Typ.
60
0.69
18.3
6.4
Max.
—
1
—
—
Units
A
V
ns
nC
I
S
=1A, V
GS
=0V
T
J
= 25°C, I
F
=30A, di/dt =
150A/μs
Conditions
Test Circuits and Waveforms
E
AS
Test Circuit
Gate Charge Test Circuit
Switching Time Test Circuit
Switching Waveform
3/8
25V N-Channel MOSFET
SSF2506
Typical Electrical and Thermal Characteristics
100
10V
6V
4.5V
100
90
ID,drain current(A)
ID,drain current(A)
80
60
40
7V
80
70
60
50
40
30
20
10
0
V
DS
=5V
4V
3.5V
20
0
0
1
2
3
4
5
VDS,drain to source voltage(V)
125℃
25℃
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
VGS,gate to source voltage(V)
Figure 1. Typical Output Characteristics
10
Rdson,Drain-to-Source On
Resistance
Figure 2. Typical Transfer Characteristics
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0
25
50
75
100
125
150
175
200
Tj,Junction Temperature(°C)
9
8
7
6
5
4
3
0
5
10
V
GS
=4.5V
Rdson,Drain-to-Source On
Resistance(Normalized)
V
GS
=10V
I
D
=30A
V
GS
=4.5V
I
D
=20A
V
GS
=10V
15
20
25
30
ID,drain current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
30
25
20
15
10
5
0
2
3
4
5
6
7
8
9
10
Figure 4. On-Resistance vs. Junction
Temperature
1.
ID=30A
IS,source to drain current(A)
Rdson,Drain-to-Source On
Resistance(Normalized)
1.
1.
1.
1.
1.
1.
1.
0
125°C
125°C
25°C
25°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VSD,source to drain voltage(V)
1
1.1
VGS,gate to source voltage(V)
Figure 5. Drain-to-Source Resistance vs
Gate-to-Source Voltage
Figure 6. Body-Diode Characteristics
4/8
25V N-Channel MOSFET
SSF2506
Typical Electrical and Thermal Characteristics
VGS,gate to source voltage(V)
10
9
Capacitance (pF)
3000
2500
2000
1500
1000
500
0
0
5
10
15
20
25
30
35
VGS=0,F=1MHZ
Ciss=Cgd+Cgs, Cds shorted
Coss=Cds+Cgd
Crss=Cgd
8
7
6
5
4
3
2
1
0
QG,gate charge(nC)
C
iss
V
DS
=12.5V
I
D
=30A
C
oss
C
rss
0
5
10
15
20
25
VDS, drain to source voltage(V)
Figure 7. Gate-Charge Characteristics
1000
200
180
ID,drain current(A)
Figure 8. Capacitance Characteristics
100
Power ( W)
Ron limited
10
10uS
100uS
DC
1mS
10mS
160
140
120
100
80
60
40
20
0
0.0001
Tj(max)=175°C
Ta=25°C
1
Tj(max)=175℃ Tc=25°C
0.1
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
VDS,drain to source voltage(V)
Pulse Width (s)
Figure 9. Maximum Forward Biased Safe
Operating Area⑤
60
Power Dissipation (W)
ID,drain current(A)
Figure 10. Single Pulse Power Rating
Junction-to-Case⑤
60
50
40
30
20
10
0
50
40
30
20
10
0
0
25
50
75
100
125
150
175
TCASE (°C)
0
25
50
75
100
125
150
175
TCASE (°C)
Figure 11: Power De-rating③
Figure 12: Current De-rating③
5/8
测试/测量
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