NT256D64SH8C0GM
256MB : 32M x 64
PC2700 / PC2100 Unbuffered DDR SO-DIMM
200pin Unbuffered DDR SO-DIMM
Based on DDR333/266 16Mx16 SDRAM
Features
• JEDEC Standard 200-Pin Small Outline Dual In-Line Memory
Module (SO-DIMM)
• 32Mx64 Double Unbuffered DDR SO-DIMM based on 16Mx16
DDR SDRAM.
• Performance:
PC2700 PC2100
Speed Sort
DIMM
CAS
Latency
f
CK
Clock Frequency
t
CK
Clock Cycle
f
DQ
DQ Burst Frequency
-6K
2.5
166
6
333
-75B
2.5
133
7.5
266
MHz
ns
MHz
Unit
• Data is read or written on both clock edges
• DRAM DLL aligns DQ and DQS transitions with clock
transitions.
• Address and control signals are fully synchronous to positive
clock edge
• Programmable Operation:
- DIMM
CAS
Latency: 2, 2.5
- Burst Type: Sequential or Interleave
- Burst Length: 2, 4, 8
- Operation: Burst Read and Write
• Auto Refresh (CBR) and Self Refresh Modes
• Automatic and controlled precharge commands
• 13/9/2 Addressing (row/column/bank)
• 7.8
µs
Max. Average Periodic Refresh Interval
• Serial Presence Detect
• Gold contacts
• SDRAMs in 66-pin TSOP Type II Package
• Intended for 133 MHz and 166 MHz applications
• Inputs and outputs are SSTL-2 compatible
• V
DD
= 2.5Volt ± 0.2, V
DDQ
= 2.5Volt ± 0.2
• SDRAMs have 4 internal banks for concurrent operation
• Module has two physical banks
• Differential clock inputs
Description
NT256D64SH8C0GM is an unbuffered 200-Pin Double Data Rate (DDR) Synchronous DRAM Small Outline Dual In-Line Memory
Module (SO-DIMM), organized as a two-bank 32Mx64 high-speed memory array. The module uses eight 16Mx16 DDR SDRAMs in 400
mil TSOP II packages. These DIMMs are manufactured using raw cards developed for broad industry use as reference designs.
use of these common design files minimizes electrical variation between suppliers. All NANYA DDR SDRAM DIMMs provide a
high-performance, flexible 8-byte interface in a 2.66” long space-saving footprint.
The DIMM is intended for use in applications operating up to 166 MHz clock speeds and achieves high-speed data transfer rates of up to
333 MHz. Prior to any access operation, the device
CAS
latency and burst type/ length/operation type must be programmed into the
DIMM by address inputs A0-A12 and I/O inputs BA0 and BA1 using the mode register set cycle.
The DIMM uses serial presence-detect implemented via a serial 2,048-bit EEPROM using a standard IIC protocol. The first 128 bytes of
serial PD data are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.
The
Ordering Information
Part Number
NT256D64SH8C0GM-6K
133MHz (7.5ns @ CL = 2)
32Mx64
133MHz (7.5ns @ CL = 2.5)
NT256D64SH8C0GM-75B
100MHz (10ns @ CL = 2)
DDR266B
PC2100
Gold
2.5V
Speed
166MHz (6ns @ CL = 2.5)
DDR333
PC2700
Organization
Leads
Power
REV 0.1
12/2003
1
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
© NANYA TECHNOLOGY CORP.
NT256D64SH8C0GM
256MB : 32M x 64
PC2700 / PC2100 Unbuffered DDR SO-DIMM
Pin Description
CK0, CK1, CK2,
CK0, CK1, CK2
CKE0, CKE1
RAS
CAS
WE
S0, S1
A0-A9, A11, A12
A10/AP
BA0, BA1
V
REF
V
DDID
Differential Clock Inputs
Clock Enable
Row Address Strobe
Column Address Strobe
Write Enable
Chip Selects
Address Inputs
Address Input/Autoprecharge
SDRAM Bank Address Inputs
Ref. Voltage for SSTL_2 inputs
V
DD
Identification flag.
DQ0-DQ63
DQS0-DQS7
DM0-DM7
V
DD
V
DDQ
V
SS
NC
SCL
SDA
SA0-2
V
DDSPD
Data input/output
Bi-directional data strobes
Data Masks
Power (2.5V)
Supply voltage for DQs(2.5V)
Ground
No Connect
Serial Presence Detect Clock Input
Serial Presence Detect Data input/output
Serial Presence Detect Address Inputs
Serial EEPROM positive power supply (2.5V)
Pinout
Pin
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
45
47
49
Front
V
REF
V
SS
DQ0
DQ1
V
DD
DQS0
DQ2
V
SS
DQ3
DQ8
V
DD
DQ9
DQS1
V
SS
DQ10
DQ11
V
DD
CK0
CK0
V
SS
DQ16
DQ17
V
DD
DQS2
DQ18
Pin
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
Back
V
REF
V
SS
DQ4
DQ5
V
DD
DM0
DQ6
V
SS
DQ7
DQ12
V
DD
DQ13
DM1
V
SS
DQ14
DQ15
V
DD
V
DD
V
SS
V
SS
DQ20
DQ21
V
DD
DM2
DQ22
Pin
51
53
55
57
59
61
63
65
67
69
71
73
75
77
79
81
83
85
87
89
91
93
95
97
99
Front
V
SS
DQ19
DQ24
V
DD
DQ25
DQS3
V
SS
DQ26
DQ27
V
DD
NC
NC
V
SS
DQS8
NC
V
DD
NC
DU
V
SS
CK2
CK2
V
DD
CKE1
DU
A12
Pin
52
54
56
58
60
62
64
66
68
70
72
74
76
78
80
82
84
86
88
90
92
94
96
98
100
Back
V
SS
DQ23
DQ28
V
DD
DQ29
DM3
V
SS
DQ30
DQ31
V
DD
NC
NC
V
SS
NC
NC
V
DD
NC
DU
V
SS
V
SS
V
DD
V
DD
CKE0
DU
A11
Pin
101
103
105
107
109
111
113
115
117
119
121
123
125
127
129
131
133
135
137
139
141
143
145
147
149
Front
A9
V
SS
A7
A5
A3
A1
V
DD
A10/AP
BA0
WE
S0
DU
V
SS
DQ32
DQ33
V
DD
DQS4
DQ34
V
SS
DQ35
DQ40
V
DD
DQ41
DQS5
V
SS
Pin
102
104
106
108
110
112
114
116
118
120
122
124
126
128
130
132
134
136
138
140
142
144
146
148
150
Back
A8
V
SS
A6
A4
A2
A0
V
DD
BA1
RAS
CAS
S1
DU
V
SS
DQ36
DQ37
V
DD
DM4
DQ38
V
SS
DQ39
DQ44
V
DD
DQ45
DM5
V
SS
Pin
151
153
155
157
159
161
163
165
167
169
171
173
175
177
179
181
183
185
187
189
191
193
195
197
199
Front
DQ42
DQ43
V
DD
V
DD
V
SS
V
SS
DQ48
DQ49
V
DD
DQS6
DQ50
V
SS
DQ51
DQ56
V
DD
DQ57
DQS7
V
SS
DQ58
DQ59
V
DD
SDA
SCL
V
DDSPD
V
DDID
Pin
152
154
156
158
160
162
164
166
168
170
172
174
176
178
180
182
184
186
188
190
192
194
196
198
200
Back
DQ46
DQ47
V
DD
CK1
CK1
V
SS
DQ52
DQ53
V
DD
DM6
DQ54
V
SS
DQ55
DQ60
V
DD
DQ61
DM7
V
SS
DQ62
DQ63
V
DD
SA0
SA1
SA2
DU
Note: All pin assignments are consistent for all 8-byte unbuffered versions.
REV 0.1
12/2003
2
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
© NANYA TECHNOLOGY CORP.
NT256D64SH8C0GM
256MB : 32M x 64
PC2700 / PC2100 Unbuffered DDR SO-DIMM
Input/Output Functional Description
Symbol
CK0, CK1, CK2,
CK0, CK1, CK2
(SSTL)
Type
Polarity
Cross
point
Active
High
Function
The system clock inputs. All address and command lines are sampled on the cross point
of the rising edge of CK and falling edge of CK. A Delay Locked Loop (DLL) circuit is
driven from the clock inputs and output timing for read operations is synchronized to the
input clock.
Activates the DDR SDRAM CK signal when high and deactivates the CK signal when low.
By deactivating the clocks, CKE low initiates the Power Down mode or the Self Refresh
mode.
Enables the associated DDR SDRAM command decoder when low and disables the
S0, S1
(SSTL)
Active
Low
Active
Low
command decoder when high. When the command decoder is disabled, new commands
are ignored but previous operations continue. Physical Bank 0 is selected by S0; Bank 1 is
selected by S1.
RAS, CAS, WE
V
REF
V
DDQ
BA0, BA1
(SSTL)
Supply
Supply
(SSTL)
-
When sampled at the positive rising edge of the clock,
RAS, CAS, WE
define the operation
to be executed by the SDRAM.
Reference voltage for SSTL-2 inputs
Isolated power supply for the DDR SDRAM output buffers to provide improved noise
immunity
Selects which SDRAM bank is to be active.
During a Bank Activate command cycle, A0-A12 defines the row address (RA0-RA12)
when sampled at the rising clock edge.
During a Read or Write command cycle, A0-A9 defines the column address (CA0-CA9)
when sampled at the rising clock edge. In addition to the column address, AP is used to
A0 - A9
A10/AP
A11, A12
(SSTL)
-
invoke autoprecharge operation at the end of the Burst Read or Write cycle. If AP is high,
autoprecharge is selected and BA0/BA1 define the bank to be precharged. If AP is low,
autoprecharge is disabled.
During a Precharge command cycle, AP is used in conjunction with BA0/BA1 to control
which bank(s) to precharge. If AP is high all 4 banks will be precharged regardless of the
state of BA0/BA1. If AP is low, then BA0/BA1 are used to define which bank to pre-charge.
DQ0 - DQ63
DQS0 - DQS7
(SSTL)
(SSTL)
-
Active
High
Active
High
Data and Check Bit input/output pins operate in the same manner as on conventional
DRAMs.
Data strobes: Output with read data, input with write data. Edge aligned with read data,
centered on write data. Used to capture write data.
The data write masks, associated with one data byte. In Write mode, DM operates as a
DM0 – DM7
Input
byte mask by allowing input data to be written if it is low but blocks the write operation if it
is high. In Read mode, DM lines have no effect. DM8 is associated with check bits
CB0-CB7, and is not used on x64 modules.
V
DD,
V
SS
SA0 – SA2
SDA
SCL
V
DDSPD
Supply
Supply
-
-
-
Power and ground for the DDR SDRAM input buffers and core logic
Address inputs. Connected to either V
DD
or V
SS
on the system board to configure the
Serial Presence Detect EEPROM address.
This bi-directional pin is used to transfer data into or out of the SPD EEPROM. A resistor
must be connected from the SDA bus line to V
DD
to act as a pullup.
This signal is used to clock data into and out of the SPD EEPROM. A resistor may be
connected from the SCL bus time to V
DD
to act as a pullup.
Serial EEPROM positive power supply.
CKE0, CKE1
(SSTL)
REV 0.1
12/2003
3
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
© NANYA TECHNOLOGY CORP.
NT256D64SH8C0GM
256MB : 32M x 64
PC2700 / PC2100 Unbuffered DDR SO-DIMM
Functional Block Diagram
(2 Bank, 16Mx16 DDR SDRAMs)
S1
S0
DQS0
DM0
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQS1
DM1
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
LDQS
LDM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
UDQS
UDM
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
D0
CS
LDQS
LDM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
UDQS
UDM
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
D4
DQS5
DM5
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
CS
DQS4
DM4
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
LDQS
LDM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
UDQS
UDM
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
D2
CS
LDQS
LDM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
UDQS
UDM
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
D6
CS
DQS2
DM2
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQS3
DM3
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
LDQS
LDM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
UDQS
UDM
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
CS
LDQS
LDM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS
DQS6
DM6
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
D5
DQS7
DM7
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
LDQS
LDM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
UDQS
UDM
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
CS
LDQS
LDM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS
D1
UDQS
UDM
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
D3
UDQS
UDM
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
D7
BA0-BA1
A0-A12
RAS
CAS
CKE0
CKE1
WE
Notes :
1.
2.
3.
4.
BA0-BA1 : SDRAMs D0-D7
A0-A12 : SDRAMs D0-D7
RAS
: SDRAMs D0-D7
CAS
: SDRAMs D0-D7
CKE : SDRAMs D0-D3
CKE : SDRAMs D4-D7
WE
: SDRAMs D0-D7
SCL
WP
V
DDSPD
V
DD
/V
DDQ
V
REF
V
SS
V
DDID
SPD
D0-D7
D0-D7
D0-D7
Clock Wiring
Clock Input
SDRAMs
CK0/CK0
4 SDRAMs
CK1/CK1
4 SDRAMs
CK2/CK2
NC
Serial PD
A0
SA0
A1
SA1
A2
SA2
R=120 Ohms
CK0/CK1
CK0/CK1
Card
Edge
D1/D5
SDA
* Clock Net Wiring
D0/D4
DQ wiring may differ from that described in this drawing.
DQ/DQS/DM/CKE/S relationships are maintained as shown.
DQ/DQS/DM/DQS resistors are 22+/- 5% Ohms.
V
DDID
strap connections (for memory device V
DD
, V
DDQ
):
STRAP OUT (OPEN): V
DD
= V
DDQ
STRAP IN (V
SS
): V
DD
is not equal to V
DDQ
.
D2/D6
D3/D7
REV 0.1
12/2003
4
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
© NANYA TECHNOLOGY CORP.
NT256D64SH8C0GM
256MB : 32M x 64
PC2700 / PC2100 Unbuffered DDR SO-DIMM
Serial Presence Detect --
Part 1 of 2
32Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 2.5V DDR SDRAMs with SPD
SPD Entry Value
Byte
Description
DDR333
-6K
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36-40
41
42
43
44
45
46-61
62
63
Number of Serial PD Bytes Written during Production
Total Number of Bytes in Serial PD device
Fundamental Memory Type
Number of Row Addresses on Assembly
Number of Column Addresses on Assembly
Number of DIMM Bank
Data Width of Assembly
Data Width of Assembly (cont’)
Voltage Interface Level of this Assembly
DDR SDRAM Device Cycle Time at CL=2.5
DDR SDRAM Device Access Time from Clock at CL=2.5
DIMM Configuration Type
Refresh Rate/Type
Primary DDR SDRAM Width
Error Checking DDR SDRAM Device Width
DDR SDRAM Device Attr: Min CLK Delay, Random Col
Access
DDR SDRAM Device Attributes: Burst Length Supported
DDR SDRAM Device Attributes: Number of Device Banks
DDR SDRAM Device Attributes: CAS Latencies Supported
DDR SDRAM Device Attributes: CS Latency
DDR SDRAM Device Attributes: WE Latency
DDR SDRAM Device Attributes:
DDR SDRAM Device Attributes: General
Minimum Clock Cycle at CL=2
Maximum Data Access Time from Clock at CL=2
Minimum Clock Cycle Time at CL=1
Maximum Data Access Time from Clock at CL=1
Minimum Row Precharge Time (t
RP
)
Minimum Row Active to Row Active delay (t
RRD
)
Minimum RAS to CAS delay (t
RCD
)
Minimum RAS Pulse Width (t
RAS
)
Module Bank Density
Address and Command Setup Time Before Clock
Address and Command Hold Time After Clock
Data Input Setup Time Before Clock
Data Input Hold Time After Clock
Reserved
Minimum Active/Auto-Refresh Time (t
RC
)
SDRAM Device Minimum Auto-Refresh to Active/Auto
Refresh Command Period (t
RFC
)
SDRAM Device Maximum Cycle Time (t
CK
max)
SDRAM Device Maximum DQS-DQ Skew Time (t
DQSQ
)
SDRAM Device Maximum Read Data Hold Skew Factor
(t
QHS
)
Reserved
SPD Revision
Checksum Data
Initial
0.75ns
0.75ns
0.45ns
0.45ns
60ns
72ns
12ns
0.4ns
0.55ns
Undefined
Initial
00
F2
18ns
12ns
18ns
42ns
128MB
0.9ns
0.9ns
0.5ns
0.5ns
75
75
45
45
00
3C
48
30
28
55
00
00
A7
2/2.5
0
1
Differential Clock
+/-0.2V Voltage Tolerance
7.5ns
0.70ns
N/A
N/A
20ns
15ns
20ns
45ns
48
30
48
2A
20
90
90
50
50
10ns
0.75ns
75
70
00
00
50
3C
50
2D
6ns
0.7ns
128
256
SDRAM DDR
13
9
2
X64
X64
SSTL 2.5V
7.5ns
0.75ns
Non-Parity
SR/1x(7.8us)
X16
N/A
1 Clock
2,4,8
4
2/2.5
0C
01
02
20
00
A0
75
60
70
00
82
10
00
01
0E
04
0C
DDR266B
-75B
Serial PD Data Entry
(Hexadecimal)
DDR333
-6K
80
08
07
0D
09
02
40
00
04
75
75
DDR266B
-75B
Note
Undefined
REV 0.1
12/2003
5
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
© NANYA TECHNOLOGY CORP.
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