DDR3
72 bit ECC UNB SODIMM Low Voltage
VR7PUxx7298xxx
Module Configuration
Module
Device
Configuration
Configuration
VR7PU287298FBZ
1GB
128Mx72
128Mx8 (9)
VR7PU287298FBA
1GB
128Mx72
128Mx8 (9)
VR7PU287298FBD
1GB
128Mx72
128Mx8 (9)
VR7PU287298FBx
1GB
128Mx72
128Mx8 (9)
VR7PU287298FBF
1GB
128Mx72
128Mx8 (9)
VR7PU567298GBZ
2GB
256Mx72
256Mx8 (9)
VR7PU567298GBA
2GB
256Mx72
256Mx8 (9)
VR7PU567298GBD
2GB
256Mx72
256Mx8 (9)
VR7PU567298GBx
2GB
256Mx72
256Mx8 (9)
VR7PU567298GBF
2GB
256Mx72
256Mx8 (9)
VR7PU567298FBZ
2GB
256Mx72
128Mx8 (18)
VR7PU567298FBA
2GB
256Mx72
128Mx8 (18)
VR7PU567298FBD
2GB
256Mx72
128Mx8 (18)
VR7PU567298FBx
2GB
256Mx72
128Mx8 (18)
VR7PU567298FBF
2GB
256Mx72
128Mx8 (18)
VR7PU127298HBZ
4GB
512Mx72
512Mx8 (9)
VR7PU127298HBA
4GB
512Mx72
512Mx8 (9)
VR7PU127298HBD
4GB
512Mx72
512Mx8 (9)
VR7PU127298HBx
4GB
512Mx72
512Mx8 (9)
VR7PU127298HBF
4GB
512Mx72
512Mx8 (9)
VR7PU127298GBZ
4GB
512Mx72
256Mx8 (18)
VR7PU127298GBA
4GB
512Mx72
256Mx8 (18)
VR7PU127298GBD
4GB
512Mx72
256Mx8 (18)
VR7PU127298GBx
4GB
512Mx72
256Mx8 (18)
VR7PU127298GBF
4GB
512Mx72
256Mx8 (18)
VR7PU1G7298HBZ
8GB
1Gx72
512Mx8 (18)
VR7PU1G7298HBA
8GB
1Gx72
512Mx8 (18)
VR7PU1G7298HBD
8GB
1Gx72
512Mx8 (18)
VR7PU1G7298HBx
8GB
1Gx72
512Mx8 (18)
VR7PU1G7298HBF
8GB
1Gx72
512Mx8 (18)
Notes:
For part numbers containing an x, contact Viking for the complete PN
Viking Part Number
Capacity
Device Package
TFBGA
TFBGA
TFBGA
TFBGA
TFBGA
TFBGA
TFBGA
TFBGA
TFBGA
TFBGA
TFBGA
TFBGA
TFBGA
TFBGA
TFBGA
TFBGA
TFBGA
TFBGA
TFBGA
TFBGA
TFBGA
TFBGA
TFBGA
TFBGA
TFBGA
TFBGA
TFBGA
TFBGA
TFBGA
TFBGA
Module
Ranks
1
1
1
1
1
1
1
1
1
1
2
2
2
2
2
1
1
1
1
1
2
2
2
2
2
2
2
2
2
2
Performance
PC3-6400
PC3-8500
PC3-10600
PC3-12800
PC3-12800
PC3-6400
PC3-8500
PC3-10600
PC3-12800
PC3-12800
PC3-6400
PC3-8500
PC3-10600
PC3-12800
PC3-12800
PC3-6400
PC3-8500
PC3-10600
PC3-12800
PC3-12800
PC3-6400
PC3-8500
PC3-10600
PC3-12800
PC3-12800
PC3-6400
PC3-8500
PC3-10600
PC3-12800
PC3-12800
CAS Latency
CL6 (6-6-6)
CL7 (7-7-7)
CL9 (9-9-9)
CL10 (10-10-10)
CL11 (11-11-11)
CL6 (6-6-6)
CL7 (7-7-7)
CL9 (9-9-9)
CL10 (10-10-10)
CL11 (11-11-11)
CL6 (6-6-6)
CL7 (7-7-7)
CL9 (9-9-9)
CL10 (10-10-10)
CL11 (11-11-11)
CL6 (6-6-6)
CL7 (7-7-7)
CL9 (9-9-9)
CL10 (10-10-10)
CL11 (11-11-11)
CL6 (6-6-6)
CL7 (7-7-7)
CL9 (9-9-9)
CL10 (10-10-10)
CL11 (11-11-11)
CL6 (6-6-6)
CL7 (7-7-7)
CL9 (9-9-9)
CL10 (10-10-10)
CL11 (11-11-11)
Features
•
JEDEC standard Power Supply
o
VDD = 1.35V (1.283V to 1.45V)
o
VDDSPD = +3.0V to +3.6V
o
Backward Compatible with 1.5V DDR3 DIMMs
VDD = 1.5V (1.425V to 1.575V)
204-pin Small Outline Dual-In-Line Memory Module.
8 Internal Banks.
Programmable CAS Latency: 6, 7, 9, 11
Programmable CAS Write Latency (CWL).
Programmable Additive Latency (Posted CAS).
•
•
•
•
•
•
•
•
•
•
•
•
Fixed burst chop (BC) of 4 and burst length (BL) of 8 via
the mode register set (MRS)
Selectable BC4 or BL8 on-the-fly (OTF)
On-Die-Termination (ODT) and Dynamic ODT for improved
signal integrity.
Refresh. Self Refresh and Power Down Modes.
Serial Presence Detect with EEPROM.
On-DIMM Thermal Sensor.
RoHS Compliant* (see last page)
Viking Technology♦20091 Ellipse♦Foothill Ranch, CA 92610
Tel (800) 338-2361 Fax (949) 666-8159♦Website: http://www.vikingtechnology.com
This Data Sheet is subject to change without notice.
Doc. # PS7PUxx7298XXX
Revision B
Page 1 of 28
DDR3
72 bit ECC UNB SODIMM Low Voltage
VR7PUxx7298xxx
PIN FUNCTION DESCRIPTION
SYMBOL
CK0, CK1
#CK0, #CK1
CKE[1:0]
TYPE
IN
IN
IN
POLARITY
Positive Edge
Negative Edge
Active High
DESCRIPTION
Positive line of the differential pair of system clock inputs.
Negative line of the differential pair of system clock inputs.
CKE HIGH activates, and CKE LOW deactivates internal clock signals, and device input
buffers and output drivers of the SDRAMs. Taking CKE LOW provides PRECHARGE
POWER-DOWN and SELF REFRESH operation (all banks idle), or ACTIVE POWER
DOWN (row ACTIVE in any bank)
Enables the associated SDRAM command decoder when low and disables decoder when
high. When decoder is disabled, new commands are ignored and previous operations
continue. These input signals also disable all outputs (except CKE and ODT) of the
register(s) on the DIMM when both inputs are high. When both S[1:0] are high, all register
outputs (except CKE, ODT and Chip select) remain in the previous state. For modules
supporting 4 ranks, S[3:2] operate similarly to S[1:0] for a second set of register outputs.
On-Die Termination control signals
When sampled at the positive rising edge of the clock, CAS#, RAS#, and WE# define the
operation to be executed by the SDRAM.
Reference voltage for DQ0-DQ63 and CB0-CB7.
Reference voltage for A0-A15, BA0-BA2, RAS#, CAS#, WE#, S0#, S1#, CKE0, CKE1,
Par_In, ODT0 and ODT1.
Selects which SDRAM bank of eight is activated. BA0 - BA2 define to which bank an
Active, Read, Write or Precharge command is being applied. Bank address also
determines mode register is to be accessed during an MRS cycle.
Provided the row address for Active commands and the column address
and Auto Precharge bit for Read/Write commands to select one location out of the
memory array in the respective bank. A10 is sampled during a Precharge command to
determine whether the Precharge applies to one bank (A10 LOW) or all banks (A10
HIGH). If only one bank is to be precharged, the bank is selected by BA. A12 is also
utilized for BL 4/8 identification for ‘’BL on the fly’’ during CAS# command. The address
inputs also provide the op-code during Mode Register Set commands.
Data and Check Bit Input/Output pins
Power and ground for the DDR SDRAM input buffers and core logic.
Masks write data when high, issued concurrently with input data.
Power and ground for the DDR SDRAM input buffers and core logic.
Termination Voltage for Address/Command/Control/Clock nets.
Positive line of the differential data strobe for input and output data.
Negative line of the differential data strobe for input and output data.
TDQS, TDQS# is applicable for X8 DRAMs only. When enabled via Mode Register A11=1
in MR1, DRAM will enable the same termination resistance function on TDQS, TDQS#
that is applied to DQS, DQS#. When disabled via mode register A11=0 in MR1, DM,
TDQS will provide the data mask function and TDQS# is not used. X4/X16 DRAMs must
disable the TDQS function via mode register A11=0 in MR1
These signals are tied at the system planar to either VSS or VDDSPD to configure the
serial SPD EEPROM address range.
This bidirectional pin is used to transfer data into or out of the SPD EEPROM. A resistor
must be connected from the SDA bus line to V
DDSPD
on the system planar to act as a
pull-up.
This signal is used to clock data into and out of the SPD EEPROM. A resistor may be
connected from the SCL bus time to VDDSPD on the system planar to act as a pull-up.
This signal indicates that a thermal event has been detected in the thermal sensing
device. The system should guarantee the electrical level requirement is met for the
EVENT pin on TS/SPD part.
S[3:0]#
IN
Active Low
ODT[1:0]
RAS#, CAS#,
WE#
VREFDQ
VREFCA
BA[2:0]
IN
IN
Supply
Supply
IN
Active High
Active Low
-
A[15:13,
12/BC,11,
10/AP,9:0]
DQ [63:0],
CB [7:0]
VDD, VSS
DM [8:0]
VDD, VSS
VTT
DQS[17:0]
DQS [17:0]#
TDQS[17:9],
TDQS[17:9]#
SA [2:0]
SDA
SCL
EVENT#
IN
-
I/O
Supply
IN
Supply
Supply
I/O
I/O
OUT
-
-
Active High
Positive Edge
Negative Edge
IN
I/O
IN
OUT
(open drain)
-
-
-
Active Low
Viking Technology♦20091 Ellipse♦Foothill Ranch, CA 92610
Tel (800) 338-2361 Fax (949) 666-8159♦Website: http://www.vikingtechnology.com
This Data Sheet is subject to change without notice.
Doc. # PS7PUxx7298XXX
Revision B
Page 4 of 28
测试/测量
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