2SB082020MAJL
2SB082020MAJL SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
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2SB082020MAJL is a schottky barrier diode chips
fabricated in silicon epitaxial planar technology;
Low power losses, high efficiency;
Guard ring construction for transient protection;
High ESD capability;
High surge capability;
Packaged products are widely used in switching
power suppliers, polarity protection circuits and
other electronic circuits.;
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Chip Size:830µm X 830µm;
Chip Thickness: 210±20µm;
Chip Topography and Dimensions
La: Chip Size: 830µm;
Lb: Pad Size: 750µm;
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ORDERING SPECIFICATIONS
Product Name
2SB082020MAJL
Specification
For Au and AlSi wire bonding
package
ABSOLUTE MAXIMUM RATINGS
Parameters
Maximum Repetitive Peak Reverse Voltage
Average Forward Rectified Current
Peak Forward Surge Current@8.3ms
Maximum Operation Junction Temperature
Storage Temperature Range
Symbol
V
RRM
I
FAV
I
FSM
T
J
T
STG
Ratings
20
1
40
150
-40~150
Unit
V
A
A
°C
°C
ELECTRICAL CHARACTERISTICS (T
amb
=25°C)
Parameters
Reverse Voltage
Forward Voltage
Symbol
V
BR
V
F1
V
F2
Reverse Current
I
R1
I
R2
Test Conditions
Min.
20
--
--
--
--
Max.
--
0.530
0.595
10
1
Unit
V
V
V
A
A
I
R
=50
A
I
F
=1A
I
F
=2A
V
R
=20V
V
R
=10V
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2008.05.19
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