Power Bipolar Transistor
参数名称 | 属性值 |
厂商名称 | Toshiba(东芝) |
包装说明 | , |
Reach Compliance Code | unknow |
2SB1667(TE24L) | 2SB1667(SM)-GR | 2SB1667(SM)-O | 2SB1667(SM)-Y | |
---|---|---|---|---|
描述 | Power Bipolar Transistor | TRANSISTOR 3 A, 60 V, PNP, Si, POWER TRANSISTOR, LEAD FREE, 2-10S2, 3 PIN, BIP General Purpose Power | TRANSISTOR 3 A, 60 V, PNP, Si, POWER TRANSISTOR, LEAD FREE, 2-10S2, 3 PIN, BIP General Purpose Power | TRANSISTOR 3 A, 60 V, PNP, Si, POWER TRANSISTOR, LEAD FREE, 2-10S2, 3 PIN, BIP General Purpose Power |
包装说明 | , | LEAD FREE, 2-10S2, 3 PIN | LEAD FREE, 2-10S2, 3 PIN | LEAD FREE, 2-10S2, 3 PIN |
Reach Compliance Code | unknow | unknow | unknow | unknow |
是否无铅 | - | 不含铅 | 含铅 | 含铅 |
针数 | - | 3 | 3 | 3 |
ECCN代码 | - | EAR99 | EAR99 | EAR99 |
外壳连接 | - | COLLECTOR | COLLECTOR | COLLECTOR |
最大集电极电流 (IC) | - | 3 A | 3 A | 3 A |
集电极-发射极最大电压 | - | 60 V | 60 V | 60 V |
配置 | - | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | - | 150 | 60 | 100 |
JESD-30 代码 | - | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
元件数量 | - | 1 | 1 | 1 |
端子数量 | - | 2 | 2 | 2 |
最高工作温度 | - | 150 °C | 150 °C | 150 °C |
封装主体材料 | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | - | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | - | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | - | PNP | PNP | PNP |
认证状态 | - | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | - | YES | YES | YES |
端子形式 | - | GULL WING | GULL WING | GULL WING |
端子位置 | - | SINGLE | SINGLE | SINGLE |
晶体管应用 | - | AMPLIFIER | AMPLIFIER | AMPLIFIER |
晶体管元件材料 | - | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | - | 9 MHz | 9 MHz | 9 MHz |
Base Number Matches | - | 1 | 1 | 1 |
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