Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Microchip(微芯科技) |
| 包装说明 | CHIP CARRIER, S-CQCC-N20 |
| Reach Compliance Code | compli |
| 其他特性 | LOGIC LEVEL COMPATIBLE |
| 最大集电极电流 (IC) | 0.5 A |
| 集电极-发射极最大电压 | 50 V |
| 配置 | 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| 最小直流电流增益 (hFE) | 1000 |
| JESD-30 代码 | S-CQCC-N20 |
| JESD-609代码 | e0 |
| 元件数量 | 8 |
| 端子数量 | 20 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | SQUARE |
| 封装形式 | CHIP CARRIER |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | NPN |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | NO LEAD |
| 端子位置 | QUAD |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| SG2803L/DESC | SG2803J | SG2803J/883B | SG2803J/DESC | SG2803L | SG2803L/883B | |
|---|---|---|---|---|---|---|
| 描述 | Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon | Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon | Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon | Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon | Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon | Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) |
| 包装说明 | CHIP CARRIER, S-CQCC-N20 | IN-LINE, R-CDIP-T18 | IN-LINE, R-CDIP-T18 | IN-LINE, R-CDIP-T18 | CHIP CARRIER, S-CQCC-N20 | CHIP CARRIER, S-CQCC-N20 |
| Reach Compliance Code | compli | compli | compli | compli | compli | compli |
| 其他特性 | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE |
| 最大集电极电流 (IC) | 0.5 A | 0.5 A | 0.5 A | 0.5 A | 0.5 A | 0.5 A |
| 集电极-发射极最大电压 | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V |
| 配置 | 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| 最小直流电流增益 (hFE) | 1000 | 1000 | 1000 | 1000 | 1000 | 1000 |
| JESD-30 代码 | S-CQCC-N20 | R-CDIP-T18 | R-CDIP-T18 | R-CDIP-T18 | S-CQCC-N20 | S-CQCC-N20 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
| 元件数量 | 8 | 8 | 8 | 8 | 8 | 8 |
| 端子数量 | 20 | 18 | 18 | 18 | 20 | 20 |
| 最高工作温度 | 150 °C | 150 °C | 125 °C | 150 °C | 125 °C | 150 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | SQUARE | RECTANGULAR | RECTANGULAR | RECTANGULAR | SQUARE | SQUARE |
| 封装形式 | CHIP CARRIER | IN-LINE | IN-LINE | IN-LINE | CHIP CARRIER | CHIP CARRIER |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | NPN | NPN | NPN | NPN | NPN | NPN |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | NO | NO | NO | YES | YES |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | NO LEAD | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | NO LEAD | NO LEAD |
| 端子位置 | QUAD | DUAL | DUAL | DUAL | QUAD | QUAD |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
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