ZMM1B...ZMM75B
Silicon Epitaxial Planar Zener Diodes
In MiniMELF case especially for automatic insertion.
LL-34
These diodes are also available in DO-35 case with the
type designation BZX55B...
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Power Dissipation
Junction Temperature
Storage Temperature Range
1)
Symbol
P
tot
T
j
T
stg
Value
500
1)
175
- 55 to + 175
Unit
mW
O
C
C
O
Valid provided that electrodes are kept at ambient temperature
Characteristics at T
a
= 25
O
C
Parameter
Thermal Resistance Junction to Ambient Air
Forward Voltage
at I
F
= 100 mA
1)
Symbol
R
θJA
V
F
Max.
0.3
1)
1
Unit
K/mW
V
Valid provided that electrodes are kept at ambient temperature
ZMM1B...ZMM75B
Characteristics at T
a
= 25
O
C
Zener Voltage Range
Type
ZMM1B
2)
1)
Dynamic Resistance
Z
ZT
Max. (Ω)
8
85
85
85
85
85
85
85
85
75
60
35
25
10
8
7
7
10
15
20
20
26
30
40
50
55
55
80
80
80
80
80
90
90
110
125
135
150
200
250
Z
ZK
Max. (Ω)
50
600
600
600
600
600
600
600
600
600
600
550
450
200
150
50
50
50
70
70
90
110
110
170
170
220
220
220
220
220
220
220
500
500
600
700
700
1000
1000
1000
at I
ZK
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Reverse Leakage Current
T
a
= 25 C
O
V
Znom
(V)
0.75
2
2.2
2.4
2.7
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
V
ZT
(V)
0.73…0.77
1.96…2.04
2.16…2.24
2.35…2.45
2.65…2.75
2.94…3.06
3.23…3.37
3.53…3.67
3.82…3.98
4.21…4.39
4.61…4.79
5…5.2
5.49…5.71
6.08…6.32
6.66…6.94
7.35…7.65
8.04…8.36
8.92…9.28
9.8…10.2
10.78…11.22
11.76…12.24
12.74…13.26
14.7…15.3
15.68…16.32
17.64…18.36
19.6…20.4
21.56…22.44
23.52…24.48
26.46…27.54
29.4…30.6
32.34…33.66
35.28…36.72
38.22…39.78
42.14…43.86
46.06…47.94
49.98…52.02
54.88…57.12
60.76…63.24
66.64…69.36
73.5…76.5
at I
ZT
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
T
a
= 125 C
Max. (µA)
-
200
160
100
50
40
40
40
40
20
10
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
5
5
5
10
10
10
10
10
o
at V
R
(V)
-
1
1
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
Temp coefficient
of Zener Voltage
TKvz (%/K)
-0.26...-0.23
-0.09...-0.06
-0.09...-0.06
-0.09...-0.06
-0.09...-0.06
-0.08...-0.05
-0.08...-0.05
-0.08...-0.05
-0.08...-0.05
-0.06...-0.03
-0.05...+0.02
-0.02...+0.02
-0.05...+0.05
0.03...0.06
0.03...0.07
0.03...0.07
0.03...0.08
0.03...0.09
0.03...0.1
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
Max. (µA)
-
100
75
50
10
4
2
2
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
ZMM2B0
ZMM2B2
ZMM2B4
ZMM2B7
ZMM3B0
ZMM3B3
ZMM3B6
ZMM3B9
ZMM4B3
ZMM4B7
ZMM5B1
ZMM5B6
ZMM6B2
ZMM6B8
ZMM7B5
ZMM8B2
ZMM9B1
ZMM10B
ZMM11B
ZMM12B
ZMM13B
ZMM15B
ZMM16B
ZMM18B
ZMM20B
ZMM22B
ZMM24B
ZMM27B
ZMM30B
ZMM33B
ZMM36B
ZMM39B
ZMM43B
ZMM47B
ZMM51B
ZMM56B
ZMM62B
ZMM68B
ZMM75B
1)
2)
Tested with pulses t
p
= 20 ms.
The ZMM1B is a silicon diode with operation in forward direction. Hence, the index of all parameters should be "F" instead of "Z". Connect the cathode
electrode to the negative pole.
ZMM1B...ZMM75B
Breakdown characteristics
T
j
= constant (pulsed)
mA
50
ZMM3B3 ZMM3B9 ZMM4B7
Tj=25 C
ZMM1B
o
ZMM6B8
ZMM...
ZMM2B7
Iz
40
ZMM8B2
ZMM5B6
30
20
10
Test current Iz
5mA
0
0
1
2
3
4
5
6
Vz
7
8
9
10 V
Breakdown characteristics
T
j
= constant (pulsed)
mA
30
ZMM...
ZMM10B
ZMM12B
Tj=25
o
C
Iz
ZMM15B
20
ZMM18B
ZMM22B
Test current Iz
5mA
ZMM27B
ZMM33B
ZMM36B
10
0
0
10
20
Vz
30
40 V
ZMM1B...ZMM75B
Breakdown characteristics
T
j
= constant (pulsed)
mA
10
ZMM51B
ZMM...
Tj=25
o
C
ZMM39B
Iz
8
ZMM43B
Test current Iz
5mA
6
ZMM47B
4
2
0
0
10
20
30
40
50
60
Vz
70
80
90
100 V
Forward characteristics
Admissible power dissipation
versus ambient temperature
Valid provided that electrodes are kept
at ambient temperature.
mA
10
3
ZMM...
mW
500
ZMM...
10
2
i
F
10
Tj=100 C
1
Tj=25 C
10
-1
o
o
P
tot
400
300
10
-2
200
10
-3
100
-4
10
10
-5
0
0
0.2
0.4
0.6
V
F
0.8
1V
0
100
200
o
C
T
amb
ZMM1B...ZMM75B
Pulse thermal resistance
versus pulse duration
Valid provided that the electrodes are kept
at ambient temperature.
K/W
10
3
7
5
5
4
3
2
2
2
4
Dynamic resistance
versus Zener current
ZMM...
ZMM...
1000
T
j
=25 C
o
r
thA
r
zj
3
0.5
100
0.2
5
4
10
7
5
4
3
0.1
0.05
3
2
2
0.02
0.01
V=0
10
7
5
4
3
2
10
ZMM1B
5
4
2B7
3B6
4B7
t
p
t
p
V=
T
P
I
3
2
5B1
ZMM5B6
0.1
2
5
T
1
10
-5
10
-4
10
-3
1
1
10 S
1
2
5
10
-2
10
t
p
-1
10
2
5
100mA
Iz
Capacitance versus
Zener voltage
Dynamic resistance
versus Zener current
ZMM...
pF
1000
7
5
ZMM...
T
j
=25 C
o
100
T
j
=25 C
5
o
r
zj
V
R
=1V
4
3
C
tot
4
3
33B
2
V
R
=2V
2
27B
22B
10
100
7
5
4
3
18B
15B
12B
10B
V
R
=1V
5
4
3
V
R
=2V
2
6B8/8B2
2
ZMM6B2
1
0.1
1
2
3
4 5
2
5
10
10
2
3
4 5
1
2
5
10
2
5
100mA
100V
Iz
Vz at Iz=5 mA
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