1N5221C~1N5267C
Zener diode
Features
1. High reliability
2. Very sharp reverse characteristic
3. Low reverse current level
4. V
Z
-tolerance±2%
Applications
Voltage stabilization
Absolute Maximum Ratings
T
j
=25℃
Parameter
Power dissipation
Z-current
Junction temperature
Storage temperature range
Test Conditions
T
amb
≤75℃
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
200
-65~+200
Unit
mW
mA
℃
℃
Maximum Thermal Resistance
T
j
=25℃
Parameter
Junction ambient
Test Conditions
I=9.5mm(3/8”) T
L
=constant
Symbol
R
thJA
Value
300
Unit
K/W
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Electrical Characteristics
T
j
=25℃
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.1
Unit
V
Excel Semiconductor
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Rev. 3e, 1-Nov-2006
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1N5221C~1N5267C
V
Znom1)
I
ZT
for
r
zjT
r
zjK
at
I
ZK
I
R
at
V
R
TK
VZ
V
mA
Ω
Ω
mA
μA
V
%/K
1N5221C
2.4
20
<30
<1200
0.25
<100
1.0
<-0.085
1N5222C
2.5
20
<30
<1250
0.25
<100
1.0
<-0.085
1N5223C
2.7
20
<30
<1300
0.25
<75
1.0
<-0.080
1N5224C
2.8
20
<30
<1400
0.25
<75
1.0
<-0.080
1N5225C
3.0
20
<29
<1600
0.25
<50
1.0
<-0.075
1N5226C
3.3
20
<28
<1600
0.25
<25
1.0
<-0.070
1N5227C
3.6
20
<24
<1700
0.25
<15
1.0
<-0.065
1N5228C
3.9
20
<23
<1900
0.25
<10
1.0
<-0.060
1N5229C
4.3
20
<22
<2000
0.25
<5
1.0
<+0.055
1N5230C
4.7
20
<19
<1900
0.25
<5
2.0
<+0.030
1N5231C
5.1
20
<17
<1600
0.25
<5
2.0
<+0.030
1N5232C
5.6
20
<11
<1600
0.25
<5
3.0
<+0.038
1N5233C
6.0
20
<7
<1600
0.25
<5
3.5
<+0.038
1N5234C
6.2
20
<7
<1000
0.25
<5
4.0
<+0.045
1N5235C
6.8
20
<5
<750
0.25
<3
5.0
<+0.050
1N5236C
7.5
20
<6
<500
0.25
<3
6.0
<+0.058
1N5237C
8.2
20
<8
<500
0.25
<3
6.5
<+0.062
1N5238C
8.7
20
<8
<600
0.25
<3
6.5
<+0.065
1N5239C
9.1
20
<10
<600
0.25
<3
7.0
<+0.068
1N5240C
10
20
<17
<600
0.25
<3
8.0
<+0.075
1N5241C
11
20
<22
<600
0.25
<2
8.4
<+0.076
1N5242C
12
20
<30
<600
0.25
<1
9.1
<+0.077
1N5243C
13
9.5
<13
<600
0.25
<0.5
9.9
<+0.079
1N5244C
14
9.0
<15
<600
0.25
<0.1
10
<+0.082
1N5245C
15
8.5
<16
<600
0.25
<0.1
11
<+0.082
1N5246C
16
7.8
<17
<600
0.25
<0.1
12
<+0.083
1N5247C
17
7.4
<19
<600
0.25
<0.1
13
<+0.084
1N5248C
18
7.0
<21
<600
0.25
<0.1
14
<+0.085
1N5249C
19
6.6
<23
<600
0.25
<0.1
15
<+0.086
1N5250C
20
6.2
<25
<600
0.25
<0.1
16
<+0.086
1N5251C
22
5.6
<29
<600
0.25
<0.1
17
<+0.087
1N5252C
24
5.2
<33
<600
0.25
<0.1
18
<+0.088
1N5253C
25
5.0
<35
<600
0.25
<0.1
19
<+0.089
1N5254C
27
4.6
<41
<600
0.25
<0.1
21
<+0.090
1N5255C
28
4.5
<44
<600
0.25
<0.1
21
<+0.091
1N5256C
30
4.2
<49
<600
0.25
<0.1
23
<+0.091
1N5257C
33
3.8
<58
<700
0.25
<0.1
25
<+0.092
1N5258C
36
3.4
<70
<700
0.25
<0.1
27
<+0.093
1N5259C
39
3.2
<80
<800
0.25
<0.1
30
<+0.094
1N5260C
43
3.0
<93
<900
0.25
<0.1
33
<+0.095
1N5261C
47
2.7
<105
<1000
0.25
<0.1
36
<+0.095
1N5262C
51
2.5
<125
<1100
0.25
<0.1
39
<+0.096
1N5263C
56
2.2
<150
<1300
0.25
<0.1
43
<+0.096
1N5264C
60
2.1
<170
<1400
0.25
<0.1
46
<+0.097
1N5265C
62
2.0
<185
<1400
0.25
<0.1
47
<+0.097
1N5266C
68
1.8
<230
<1600
0.25
<0.1
52
<+0.097
1N5267C
75
1.7
<270
<1700
0.25
<0.1
58
<+0.098
1) Based on DC-measurement at thermal equilibrium while maintaining the lead temperature(T
L
)at 30℃,
Type
9.5mm(3/8”) from the diode body.
Excel Semiconductor
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FaxBack +86-512-66607370
Rev. 3e, 1-Nov-2006
2/5
1N5221C~1N5267C
Characteristics
(T
j
=25℃ unless otherwise specified)
Figure 1. Zener Voltage versus Zener Current – Vz=1 thru 16 Volts
Figure 2. Zener Voltage versus Zener Current – Vz=15 thru 30 Volts
Excel Semiconductor
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FaxBack +86-512-66607370
Rev. 3e, 1-Nov-2006
3/5
1N5221C~1N5267C
Figure 3. Zener Voltage versus Zener Current – Vz=30 thru 75 Volts
Figure 4. Thermal resistance from junction to ambient as a function of pulse duration
Excel Semiconductor
www.excel-semi.com
FaxBack +86-512-66607370
Rev. 3e, 1-Nov-2006
4/5
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