SVD8N60T/SVD8N60F
8A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD8N60T/F is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
S-Rin
TM
structure DMOS technology. The improved planar stripe
cell and the improved guarding ring terminal have been especially
tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
∗
8A,600V,R
DS(on) typ
=0.96Ω@V
GS
=10V
∗
Low gate charge
∗
Low Crss
∗
Fast switching
∗
Improved dv/dt capability
ORDERING SPECIFICATIONS
Part No.
SVD8N60T
SVD8N60F
Package
TO-220-3L
TO-220F-3L
Marking
SVD8N60T
SVD8N60F
Shipping
50Unit/Tube
50Unit/Tube
ABSOLUTE MAXIMUM RATINGS
(T
c
=25°C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
Power Dissipation(T
C
=25°C)
-Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Repetitive Avalanche Energy
Operation Junction Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
DM
P
D
E
AS
E
AR
T
J
Tstg
-55
-55
147
1.18
530
14.2
+150
+150
SVD8N60T
600
±30
8.0
28
48
0.38
SVD8N60F
Unit
V
V
A
A
W
W/°C
mJ
mJ
°C
°C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2009.07.09
Page 1 of 7
SVD8N60T/SVD8N60F
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
JC
R
JA
SVD8N60T
0.85
62.5
SVD8N60F
2.6
62.5
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted)
Parameter
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source On State
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
B
VDSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
(Note 2,3)
V
DS
=480V,I
D
=7.0A,
V
GS
=10V
(Note 2,3)
Test conditions
V
GS
=0V, I
D
=250µA
V
DS
=600V, V
GS
=0V
V
GS
=±30V, V
DS
=0V
V
GS
= V
DS
, I
D
=250µA
V
GS
=10V, I
D
=3.5A
V
DS
=25V,V
GS
=0V,
f=1.0MHZ
V
DD
=300V,I
D
=7.0A,
R
G
=25Ω
Min.
600
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
--
0.96
1095
93
2
39
29
248
36
26.8
5.1
8.5
--
--
--
--
ns
--
--
--
--
--
nC
pF
Max.
--
10
±100
4.0
1.2
Unit
V
µA
nA
V
Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.
L=19.5mH,I
AS
=7.0A,V
DD
=50V,R
G
=25Ω,starting T
J
=25°C;
Symbol
I
S
I
SM
V
SD
T
rr
Q
rr
Test conditions
Integral
Junction
MOSFET
I
S
=8.0A,V
GS
=0V
I
S
=8.0A,V
GS
=0V,
dI
F
/dt=100A/µS
Reverse
Diode
in
P-N
the
Min.
--
--
--
--
--
Typ.
--
--
--
365
3.4
Max.
8.0
28
1.4
--
--
A
V
ns
µC
Unit
2.
Pulse Test: Pulse width 300 s,Duty cycle 2%;
3.
Essentially independent of operating temperature.
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2009.07.09
Page 2 of 7
SVD8N60T/SVD8N60F
NOMENCLATURE
TYPICAL CHARACTERISTICS
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2009.07.09
Page 3 of 7
SVD8N60T/SVD8N60F
TYPICAL CHARACTERISTICS (continued)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2009.07.09
Page 4 of 7
SVD8N60T/SVD8N60F
TYPICAL TEST CIRCUIT
Gate Charge Test Circuit & Waveform
Same Type
as DUT
50
12V
200nF
300nF
V
GS
V
DS
10V
Qg
Qgs
Qgd
V
GS
DUT
Charge
3mA
Resistive Switching Test Circuit & Waveform
V
DS
V
GS
R
G
R
L
V
DD
V
DS
90%
10V
DUT
V
GS
10%
td(on)
tr
t
on
td(off)
t
f
t
off
Unclamped Inductive Switching Test Circuit & Waveform
L
EAS =
V
DS
I
D
R
G
10V
tp
DUT
BV
DSS
1
2
2
LI
AS
BV
DSS
-
V
DD
BV
DSS
I
AS
V
DD
I
D(t)
V
DD
tp
V
DS(t)
Time
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2009.07.09
Page 5 of 7
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