SVD5N60AT/SVD5N60AF
5A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD5N60AT/F is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
S-Rin
TM
structure DMOS technology. The improved planar stripe
cell and the improved guarding ring terminal have been especially
tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
∗
5A,600V,R
DS(on) typ
=2.0Ω@V
GS
=10V
∗
Low gate charge
∗
Low Crss
∗
Fast switching
∗
Improved dv/dt capability
ORDERING SPECIFICATIONS
Part No.
SVD5N60AT
SVD5N60AF
Package
TO-220-3L
TO-220F-3L
Marking
SVD5N60AT
SVD5N60AF
Shipping
50Unit/Tube
50Unit/Tube
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation(T
C
=25°C)
-Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Repetitive Avalanche Energy (Note 2)
Operation Junction Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
P
D
E
AS
E
AR
T
J
T
stg
-55
-55
100
0.8
330
7.3
+150
+150
SVD5N60AT
600
±30
5.0
33
0.26
SVD5N60AF
Unit
V
V
A
W
W/°C
mJ
mJ
°C
°C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2009.07.09
Page 1 of 7
SVD5N60AT/SVD5N60AF
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
JC
R
JA
SVD5N60AT
1.25
62.5
SVD5N60AF
3.79
62.5
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
c
=25°C unless otherwise noted)
Parameter
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source On State
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
B
VDSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
(Note 3,4)
V
DS
=480V,I
D
=4.4A,
V
GS
=10V
(Note 3,4)
V
DD
=300V,I
D
=4.4A,
R
G
=25Ω
Test conditions
V
GS
=0V, I
D
=250µA
V
DS
=600V, V
GS
=0V
V
GS
=±30V, V
DS
=0V
V
GS
= V
DS
, I
D
=250µA
V
GS
=10V, I
D
=2A
V
DS
=25V,V
GS
=0V,
f=1.0MHZ
Min.
600
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
--
2.0
672
66
4.7
27
19
160
22
19.8
4
7.2
Max.
--
10
±100
4.0
2.4
--
--
--
--
--
ns
--
--
--
--
--
nC
pF
Unit
V
µA
nA
V
Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.
2.
3.
4.
L=30mH,I
AS
=4.4A,V
DD
=85V,R
G
=25Ω,starting T
J
=25°C;
Repetitive Rating: Pulse width limited by maximum junction temperature;
Pulse Test: Pulse width 300 s,Duty cycle 2%;
Essentially independent of operating temperature.
Symbol
I
S
I
SM
V
SD
T
rr
Q
rr
Test conditions
Integral Reverse P-N
Junction Diode in the
MOSFET
I
S
=5.0A,V
GS
=0V
I
S
=5.0A,V
GS
=0V,
dI
F
/dt=100A/µs (Note 3)
Min.
--
--
--
--
--
Typ.
--
--
--
300
2.2
Max.
5.0
16
1.4
--
--
A
V
ns
µC
Unit
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2009.07.09
Page 2 of 7
SVD5N60AT/SVD5N60AF
NOMENCLATURE
TYPICAL CHARACTERISTICS
Figure 1. On-Region Characteristics
100
10.0
Va r i ab l e
VGS=4 . 0V
VGS=4 . 5V
VGS=5 . 0V
VGS=5 . 5V
VGS=6 . 0V
VGS=6 . 5V
VGS=7 . 0V
Figure 2. Transfer Characteristics
T=-55
T=25
10
T=150
1.0
VGS=7 . 5V
VGS=8 . 0V
VGS=10V
VGS=15V
1
No t es :
1 . 250 s Pu l se Tes t
2 . TC = 25
Notes :
1. VDS = 50V
2. 250 s Pulse Test
0.1
0
1
2
3
4
5
6
7
8
9
10
0.1
0.1
1.0
10.0
V
DS
Drain-Source Voltage [V]
V
GS
Gate-Source Voltage [V]
Figure 3. On-Resitance Variation vs.
Drain Current and Gate Voltage
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
-2
0
2
4
6
8
10
Note : TJ = 25
0.1
0.2
1
10
Figure 4. Body Diode Forward Voltage Variation vs.
Source Current and Temperature
T=25
T=150
VGS= 10.0V
VGS= 20.0V
Notes :
1. VGS = 0V
2. 250 s Pulse Test
0.4
0.6
0.8
1
1.2
1.4
I
D
Drain Current [A]
V
SD
Source-Drain Voltage [V]
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2009.07.09
Page 3 of 7
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