BLF8G27LS-140
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
140 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Test signal
2-carrier W-CDMA
2-carrier W-CDMA
[1]
f
(MHz)
2600 to 2700
2600 to 2700
I
Dq
(mA)
1300
1300
V
DS
(V)
32
28
P
L(AV)
(W)
45
35
G
p
(dB)
17.4
17.0
D
(%)
32
29
ACPR
(dBc)
30
[1]
31
[1]
Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifier for W-CDMA base stations and multi carrier applications in the
2500 MHz to 2700 MHz frequency range
BLF8G27LS-140
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
1
3
2
Graphic symbol
1
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF8G27LS-140
-
earless flanged ceramic package; 2 leads
Version
SOT502B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
[1]
Max
65
+13
+150
225
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability.
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 55 W
Typ
0.27
Unit
K/W
BLF8G27LS-140#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
2 of 14
BLF8G27LS-140
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C; unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
GS
= 0 V; I
D
= 2.16 mA
V
DS
= 10 V; I
D
= 216 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 10.8 A
Min
65
1.5
-
-
-
-
-
Typ
-
1.9
-
40
-
16
0.06
Max
-
2.3
4.5
-
450
-
-
Unit
V
V
A
A
nA
S
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 7.56 A
Table 7.
RF characteristics
Test signal: 2-carrier W-CDMA; PAR 8.4 dB at 0.01 % probability on CCDF; 3GPP test model 1;
64 DPCH; f
1
= 2622.5 MHz; f
2
= 2627.5 MHz; f
3
= 2682.5 MHz; f
4
= 2687.5 MHz; RF performance at
V
DS
= 32 V; I
Dq
= 1300 mA; T
case
= 25
C; unless otherwise specified; in a class-AB production test
circuit.
Symbol
G
p
RL
in
D
ACPR
5M
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio (5 MHz)
Conditions
P
L(AV)
= 45 W
P
L(AV)
= 45 W
P
L(AV)
= 45 W
P
L(AV)
= 45 W
Min
15.8
-
27
-
Typ
18
32
30
Max
8
-
27
Unit
dB
dB
%
dBc
17.4 -
7. Test information
7.1 Ruggedness in class-AB operation
The BLF8G27LS-140 is capable to withstand a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 32 V;
I
Dq
= 1300 mA; P
L
= 180 W (CW); f = 2620 MHz.
7.2 Impedance information
Table 8.
Typical impedance
I
Dq
= 1300 mA; V
DS
= 32 V.
f
(MHz)
2600
2700
[1]
Z
S
and Z
L
defined in
Figure 1.
Z
S[1]
()
2.30
j4.90
3.80
j4.50
Z
L[1]
()
1.40
j3.10
1.40
j3.10
BLF8G27LS-140#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
3 of 14
BLF8G27LS-140
Power LDMOS transistor
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
7.3 Test circuit
40 mm
C4
C2
C3
R1
C5
C6
C7
C1
C8
C9
60 mm
C11
C10
C12
aaa-008010
Printed-Circuit Board (PCB): Taconic RF35;
r
= 3.5; thickness = 0.765 mm;
thickness copper plating = 35
m.
See
Table 9
for a list of components.
Fig 2.
Component layout for class-AB production test circuit
BLF8G27LS-140#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
4 of 14
BLF8G27LS-140
Power LDMOS transistor
Table 9.
List of components
For test circuit see
Figure 2.
Component
C1, C3, C5, C8, C10
C2
C4
C6, C11
C7, C12
C9
R1
[1]
[2]
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
chip resistor
Value
10 pF
1
F,
25 V
470
F,
63 V
1
F,
50 V
10
F,
50 V
0.5 pF
3.9
,
1% tolerance
[2]
[2]
[1]
[1]
[2]
Remarks
ATC100B
Murata
Murata
Murata
ATC100B
Philips SMD 1206
American Technical Ceramics type 100B or capacitor of same quality.
Murata or capacitor of same quality.
7.4 Graphical data
7.4.1 Pulsed CW
aaa-007023
aaa-007024
19
G
p
(dB)
18
60
η
D
(%)
50
40
17
(3)
(2)
(1)
(1)
(2)
(3)
30
16
20
15
10
14
35
39
43
47
51
P
L
(dBm)
55
0
35
39
43
47
51
P
L
(dBm)
55
V
DS
= 32 V; I
Dq
= 1300 mA; f = 860 MHz; t
p
= 100
s;
= 10 %.
(1) f = 2620 MHz
(2) f = 2655 MHz
(3) f = 2690 MHz
V
DS
= 32 V; I
Dq
= 1300 mA; f = 860 MHz; t
p
= 100
s;
= 10 %.
(1) f = 2620 MHz
(2) f = 2655 MHz
(3) f = 2690 MHz
Fig 3.
Power gain as a function of output power;
typical values
Fig 4.
Drain efficiency as a function of output power;
typical values
BLF8G27LS-140#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
5 of 14
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