H1AF THRU H1MF
Surface Mount High Efficient Rectifier
Features
RoHS
COMPLIANT
● Low profile package
● Ideal for automated placement
● Glass passivated chip junction
● High forward surge capability
● Super fast reverse recovery time
● Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °
C
Typical Applications
For use in high frequency rectification of power
supplies, inverters, converters, and freewheeling diodes for
consumer, and telecommunication.
Mechanical Data
●
Package:
SMAF
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, halogen-free
●
Terminals:
Tin plated leads, solderable per
J-STD-002 and JESD22-B102
●
Polarity:
Cathode line denotes the cathode end
■Maximum Ratings
(Ta=25℃ Unless otherwise specified）
PARAMETER
Device marking code
Repetitive peak reverse voltage
Average rectified output current
@60Hz sine wave, resistance load, TL (Fig.1)
Surge(non-repetitive)forward current
@60Hz half-sine wave,1 cycle, Ta=25℃
Storage temperature
Junction temperature
VRRM
IO
V
A
SYMBOL
UNIT
H1AF
H1AF
50
H1BF
H1BF
100
H1DF
H1DF
200
H1GF
H1GF
400
1.0
H1JF
H1JF
600
H1KF
H1KF
800
H1MF
H1MF
1000
IFSM
Tstg
Tj
A
℃
℃
30
-55~+150
-55~+150
■Electrical
Characteristics
（T
a
=25℃ Unless otherwise specified）
PARAMETER
Maximum instantaneous
forward voltage drop per diode
Maximum reverse recovery time
SYMBOL
UNIT
TEST
CONDITIONS
IFM=1.0A
I
F
=0.5A,I
R
=1.0A,
I
rr
=0.25A
Ta =25℃
IRRM
μA
Ta =125℃
100
H1AF
H1BF
H1DF
H1GF
H1JF
H1KF
H1MF
VF
V
1.0
1.3
1.7
t
rr
ns
50
5.0
75
Maximum DC reverse current
at rated DC blocking voltage
per diode @ VRM=VRRM
1/5
S-S058
Rev. 2.2, 28-Apr-14
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
H1AF THRU H1MF
■
Thermal Characteristics
（T
a
=25℃ Unless otherwise specified）
PARAMETER
SYMBOL
RθJ-A
(1)
Thermal resistance
RθJ-L
(1)
℃/W
30
1)
UNIT
H1AF
H1BF
H1DF
H1GF
75
1)
H1JF
H1KF
H1MF
Note:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
■
Characteristics (Typical)
FIG1
：
Io-TL Curve
1.2
FIG2
：
Surge Forward Current Capability
30
Average Forward Output Current(A)
1.0
0.8
Peak Forward Surge Current(A)
25
8.3ms Single Half Sine Wave
20
0.6
15
0.4
10
0.2
Single Phase Sine Wave 60Hz
Resistive Load
0
0
30
60
90
120
150
180
210
5
0
1
Lead Temperature(
℃
)
Number of Cycles
10
100
FIG3: Forward Voltage
6
4
2
H1AF~H1DF
FIG4:Typical Reverse Characteristics
1000
Instantaneous Reverse Current(uA)
Instantaneous Forward Current(A)
1
0.5
H1GF
100
H1JF~H1MF
Tj=125
℃
10
0.1
0.05
Ta=25
℃
1
Tj=25
℃
0.02
0.01
0.4
0.8
1.2
1.6
Instantaneous Forward Voltage(V)
2.0
2.4
0.1
0
Percent of Rated Peak Reverse Voltage(%)
20
40
60
80
100
2/5
S-S058
Rev. 2.1, 28-Apr-14
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
H1AF THRU H1MF
FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
I
D
IF
t
rr
V
R
I
F
R
L
0
I
RR
t
I
R
■
Ordering Information (Example)
PREFERED P/N
H1AF-H1MF
H1AF-H1MF
H1AF-H1MF
H1AF-H1MF
PACKING
CODE
F1
F2
F3
F4
UNIT WEIGHT(g)
Approximate 0.034
Approximate 0.034
Approximate 0.034
Approximate 0.034
MINIMUM
PACKAGE(pcs)
3000
10000
10000
7500
INNER BOX
QUANTITY(pcs)
12000
20000
20000
15000
OUTER CARTON
QUANTITY(pcs)
96000
160000
120000
120000
DELIVERY
MODE
7” reel
13” reel
13” reel
13” reel
■
Outline Dimensions
SMAF
SMAF
Dim
A
Min
2.40
1.35
3.40
4.40
1.05
0.50
0.15
Max
2.80
1.45
3.60
4.80
1.25
1.00
0.22
A
B
F
E
B
C
D
E
F
G
D
C
G
Dimensions in millimeters
3/5
S-S058
Rev. 2.1, 28-Apr-14
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
H1AF THRU H1MF
■ Suggested pad layout
SMAF
Dim
P1
P2
P3
Q1
Millimeters
6.50
4.00
1.50
2.50
1.70
P2
P3
Q1
P1
Dimensions in millimeters
Q2
Q2
4/5
S-S058
Rev. 2.1, 28-Apr-14
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
H1AF THRU H1MF
Disclaimer
The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the
right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design
or otherwise.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with
equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as
medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety
devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such imprope r use
of sale.
This publication supersedes & replaces all information previously supplied. For additional information, please visit our website
http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance.
5/5
S-S058
Rev. 2.1, 28-Apr-14
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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