2SB035030MLJY
2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø
2SB035030MLJY is a schottky barrier diode chips
Lb
La
fabricated in silicon epitaxial planar technology;
Ø
Ø
Ø
Ø
Ø
Low power losses, high efficiency;
Guard ring construction for transient protection;
High ESD capability;
High surge capability;
Packaged products are widely used in switching
power suppliers, polarity protection circuits and
other electronic circuits;
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Chip Size:350µm X 350µm;
Chip Thickness: 155±20µm
Chip Topography and Dimensions
La: Chip Size: 350µm;
Lb: Pad Size: 300µm;
ORDERING SPECIFICATIONS
Product Name
2SB035030MLJY
Specification
For Au and AlSi wire bonding
package
Ø
ABSOLUTE MAXIMUM RATINGS
Parameters
Maximum Repetitive Peak Reverse Voltage
Average Forward Rectified Current
Peak Forward Surge Current@8.3ms
Maximum Operation Junction Temperature
Storage Temperature Range
Symbol
V
RRM
I
FAV
I
FSM
T
J
T
STG
Ratings
30
200
1
125
-40~125
Unit
V
mA
A
°C
°C
ELECTRICAL CHARACTERISTICS
(Tamb=25°C)
Parameters
Reverse Voltage
Forward Voltage
Reverse Current
Symbol
V
BR
V
F
I
R
Test Conditions
IR=0.1mA
IF=200mA
VR=10V
Min.
30
--
--
Max.
--
0.50
30
Unit
V
V
µA
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2007.09.18
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