2N7002KTB
60V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• R
DS(ON)
, V
GS
@4.5V,I
DS
@200mA=4
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.007(0.17)
0.002(0.07)
0.052(1.30)
0.043(1.10)
0.067(1.70)
0.059(1.50)
0.024(0.60)
0.019(0.50)
0.013(0.33)
0.009(0.23)
• R
DS(ON)
, V
GS
@10V,I
DS
@500mA=3
MECHANICAL DATA
• Case: SOT-523 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Approx. Weight: 0.00007 ounces, 0.002 grams
• Marking : 27
0.012(0.30)
0.004(0.10)
Maximum RATINGS and Thermal Characteristics (T
A
=25
O
C unless otherwise noted )
PA RA ME TE R
D ra i n-S o urc e Vo lta g e
Ga te -S o urc e Volta g e
C o nti nuo us D ra i n C urre nt
P uls e d D ra i n C urre nt
1)
S ymb o l
V
DS
V
GS
I
D
I
D M
T
A
=2 5
O
C
T
A
=7 5
O
C
P
D
T
J
,T
S TG
R
JA
Li m i t
60
+2 0
11 5
800
200
150
-5 5 to + 15 0
883
0.0 44(1.10)
0.0 35(0.90)
0.067(1.70)
0.059(1.50)
U ni ts
V
V
mA
mA
mW
O
Ma xi m um P ow e r D i s s i pa ti o n
Op e ra ti ng J uncti o n a nd S to ra g e Te m p er ature Ra ng e
Junction-to Ambient Thermal Resistance(PCB mounted)
2
C
O
C /W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
July 20,2012-REV.02
PAGE . 1
2N7002KTB
ELECTRICAL CHARACTERISTICS
P a r a me te r
S ta t i c
D r a i n- S o ur c e B r e a k d o wn
Vo l ta g e
Ga t e Thr e s ho ld Vo lt a g e
D r a i n- S o ur c e On- S ta t e
Re s i s ta nc e
D r a i n- S o ur c e On- S ta t e
Re s i s ta nc e
Ze r o Ga t e Vo lta g e D r a i n
C ur r e nt
Gate Body Leakage
Forward Transconductance
Dynamic
To ta l Ga te C ha r g e
Tur n- On D e la y Ti m e
Tur n- Off D e la y Ti me
Inp ut C a p a c i t a nc e
Outp ut C a p a c i ta nc e
Re ve r s e Tr a ns fe r
C a p a c i t a nc e
S o urc e - D r a i n D i o d e
D i o d e F o r wa rd Vo lt a g e
C o nti nuo us D i o d e F o r wa r d
C ur r e nt
P ul s e d D i o d e F o r wa r d
C ur r e nt
V
SD
I
s
I
sM
I
S
=2 0 0 mA , V
G S
=0 V
-
-
-
-
-
0.82
-
-
1 .3
11 5
800
V
mA
mA
Q
g
t d
(o n)
t d
(off)
C
i ss
C
o ss
C
rs s
V
D S
=2 5 V, V
G S
=0 V
f=1 . 0 MH
Z
V
D S
=1 5 V, I
D
=2 0 0 mA
V
GS
=4.5V
V
DD
=30V , R
L
=150
I
D
=200mA , V
GEN
=10V
R
G
=10
-
-
-
-
-
-
-
-
-
-
-
-
0 .8
20
ns
125
35
10
5
pF
nC
B V
D SS
V
GS (th)
R
D S (on)
R
D S (on)
I
D S S
I
G S S
g
fS
V
GS
=0 V, I
D
=1 0
A
V
D S
=V
G S
, I
D
=2 5 0
A
V
GS
=4.5V, I
D
=200mA
V
GS
=10V, I
D
=500mA
V
DS
=60V, V
GS
=0V
V
G S
=+ 2 0 V, V
D S
=0 V
V
D S
=1 5 V, I
D
=2 5 0 mA
60
1
-
-
-
-
100
-
-
-
-
-
-
-
-
2 .5
4 .0
3.0
1
+1 0
-
A
A
mS
V
V
S ymb o l
Te s t C o nd i t i o n
Mi n.
Typ .
Ma x.
Uni t s
Switching
Test Circuit
V
IN
V
DD
R
L
V
OUT
Gate Charge
Test Circuit
V
GS
V
DD
R
L
R
G
1mA
R
G
July 20,2012-REV.02
PAGE . 2
2N7002KTB
Typical Characteristics Curves (T
A
=25 C,unless otherwise noted)
O
I
D
- Drain-to-Source Current (A)
V
GS
= 6.0~10V
1
5.0V
5.0V
I
D
- Drain Source Current (A)
1.2
1.2
1
0.8
0.6
0.4
0.2
0
0
V
DS
=10V
0.8
0.6
0.4
0.2
0
0
1
2
3
4.0V
4.0V
3.0V
3.0V
4
5
T
J
=25
℃
1
2
3
4
5
6
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Fig. 1-TYPICAL FORWARD CHARACTERISTIC
FIG.1- Output Characteristic
5
FIG.2- Transfer Characteristic
5
R
DS(ON)
- On-Resistance (
W
)
R
DS(ON)
- On-Resistance (
W
)
4
3
2
1
0
V
GS
= 4.5V
4
3
2
1
0
I
I
D
=200mA
D
=200m A
I
D
=500m A
V
GS
=10V
0
0.2
0.4
0.6
0.8
1
2
3
4
5
6
7
8
9
10
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
FIG.3- On Resistance vs Drain Current
1.8
1.6
1.4
1.2
1
0.8
0.6
-50
FIG.4- On Resistance vs Gate to Source Voltage
R
DS(ON)
- On-Resistance(Normalized)
V
GS
=10V
I
D
=500mA
-25
0
25
50
75
100
o
125
150
T
J
- Junction Temperature ( C)
FIG.5- On Resistance vs Junction Temperature
July 20,2012-REV.02
PAGE . 3
2N7002KTB
10
8
6
4
2
0
0
0.2
0.4
0.6
0.8
1
Vgs
Qg
Vgs(th)
Qg(th)
Qgs
Qsw
V
GS
- Gate-to-Source Voltage (V)
V
DS
=10V
I
D
=250mA
Qgd
Qg
Q
g
- Gate Charge (nC)
Fig.6 - Gate Charge Waveform
V
th
- G-S Threshold Voltage (NORMALIZED)
Fig.7 - Gate Charge
88
86
84
82
80
78
76
74
72
-50
-25
0
25
50
75
100
125
150
I
D
=250mA
BV
DSS
- Breakdown Voltage (V)
150
1.2
1.1
1
0.9
0.8
0.7
-50
ID = 250uA
-25
0
25
50
75
100
125
T
J
- Junction Temperature (
o
C)
T
J
- Junction Temperature (
o
C)
Fig.8 - Threshold Voltage vs Temperature
10
Fig.9 - Breakdown Voltage vs Junction Temperature
V
GS
=0V
I
S
- Source Current (A)
1
0.1
T
J
=125
℃
25
℃
-55
℃
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
SD
- Source-to-Drain Voltage (V)
Fig.10 - Source-Drain Diode Forward Voltage
July 20,2012-REV.02
PAGE . 4
2N7002KTB
MOUNTING PAD LAYOUT
SOT-523
Unit
：
inch(mm)
0.016
(0.40)
0.053
(1.35)
0.019
(0.50)
0.019
(0.50)
ORDER INFORMATION
• Packing information
T/R - 4K per 7" plastic Reel
0.017
(0.45)
July 20,2012-REV.02
PAGE .
5
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