PJ4N3KDW
30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• R
DS(ON)
, V
GS
@2.5V,I
DS
@1mA=7.0Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• The MOSFET elements are independent,eliminating interference
• Mounting cost and area can be cut in half
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems,Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• Low voltage drive (2.5V) makes this device ideal for portable
equipment
• ESD Protected 2KV HBM
• Lead free in comply with EU RoHS 2002/95/EC directives.
•
Green molding compound as per IEC61249 Std. . (Halogen Free)
0.044(1.10)
MAX.
SOT-363
Unit
：
inch(mm)
0.087(2.20)
0.074(1.90)
0.010(0.25)
0.054(1.35)
0.045(1.15)
0.030(0.75)
0.021(0.55)
0.056(1.40)
0.047(1.20)
MECHANICAL DATA
• Case: SOT-363 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : 4N3
•
Apporx. Weight:
0.0002 ounces, 0.006 grams
0.012(0.30)
0.005(0.15)
6
5
1
2
Absolute Maximum Ratings (T
A
=25
O
C )
P a r a m e te r
D ra i n-S o urc e Vo lta g e
Ga te - S o ur c e Vo lta g e e
C o nti nuo us D ra i n C ur r e nt
P uls e d D r a i n C ur re nt
(1 )
S ym b o l
V
DS
V
GS
I
I
T
A
=2 5
O
C
T
A
=7 5
O
C
D
Li mi t
30
+ 20
100
800
200
120
-5 5 to + 1 5 0
625
0.040(1.00)
0.031(0.80)
0.010(0.25)
0.003(0.08)
4
3
Uni ts
V
V
mA
mA
mW
O
DM
M a xi m um p o we r D i s s i p a ti o n
P
D
T
J
,T
S TG
Rθ
J A
Op e r a ti ng J unc ti o n a nd S to r a g e Te m p e r a tur e Ra ng e
J unc ti o n- to A m b i e nt The r m a l Re s i s ta nc e
( P C B m o unte d )
2
O
C /W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
REV.0.3-SEP.25.2009
0.087(2.20)
0.078(2.00)
0.018(0.45)
0.006(0.15)
• R
DS(ON)
, V
GS
@4.0V,I
DS
@10mA=5.0Ω
C
PAGE . 1
PJ4N3KDW
ELECTRICAL CHARACTERISTICS (T
A
=25
O
C )
P a ra me te r
S ta ti c
D ra i n- S o ur c e B r e a k d o wn
Vo lta g e
Ga te Thr e s ho ld Vo lta g e
D ra i n- S o ur c e On- S ta te
Re s i s ta nc e
D ra i n- S o ur c e On- S ta te
Re s i s ta nc e
Ze ro Ga te Vo lta g e D r a i n
C ur re nt
Gate Body Leakage
Forward Transconductance
D i o d e F o r wa rd Vo lta g e
Dynamic
To ta l Ga te C ha rg e
Tur n- On D e la y Ti m e
Ri s e Ti me
Tur n- Off D e la y Ti m e
F a ll ti me
Inp ut C a p a c i ta nc e
Outp ut C a p a c i ta nc e
Re ve r s e Tr a ns fe r
C a p a c i ta nc e
Q
g
td
( ON )
t
r
t d
(OF F )
t
f
C
iss
C
oss
C
rss
V
D S
= 5 V, V
G S
=0 V
f=1 .0 MH
Z
V
DD
=5V , R
L
=500Ω
I
D
=10mA , V
GEN
=5V
R
G
=10Ω
V
D S
= 1 5 V, I
D
=1 0 mA
V
GS
=4.5V
-
-
-
-
-
-
-
-
-
30
8 .5
84
32
25
8
2.5
0 .8
35
12
ns
100
40
35
12
5
pF
nC
B V
DSS
V
G S ( t h)
R
D S ( o n)
R
D S ( o n)
I
D S S
I
G S S
g
fS
V
SD
V
G S
= 0 V, I
D
=1 0 uA
V
D S
= 3 .0 V, I
D
=1 0 0 uA
V
GS
=2.5V, I
D
=1mA
V
GS
=4.0V, I
D
=10mA
V
DS
=30V, V
GS
=0V
V
GS
=+ 2 0 V, V
D S
= 0 V
V
D S
= 3 V, I
D
=1 0 mA
I
S
= 11 5 mA , V
G S
=0 V
30
0 .8
-
-
-
-
10
-
-
-
-
-
-
-
-
0 .7 8
-
1 .5
7 .0
Ω
5.0
1
5
-
1 .3
uA
uA
mS
V
V
V
S ymb o l
Te s t C o nd i ti o n
Mi n.
Typ .
Ma x.
Uni ts
REV.0.3-SEP.25.2009
PAGE . 2
PJ4N3KDW
MOUNTING PAD LAYOUT
SOT-363
Unit
：
inch(mm)
0.018
(0.45)
0.020
(0.50)
0.026
(0.65)
0.026
(0.65)
ORDER INFORMATION
• Packing information
T/R - 10K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2012
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
REV.0.3-SEP.25.2009
0.075
(1.90)
PAGE . 3
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