DONGGUAN NANJING ELECTRONICS LTD.,
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
A44
TRANSISTOR (NPN)
1. BASE
2. COLLECTOR
3. EMITTER
FEATURES
Low Collector-Emitter Saturation Voltage
High Breakdown Voltage
MARKING: A44
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-Continuous
Collector Current
-Pulsed
Collector Power Dissipation
Thermal Resistance
from
Junction
to
Ambient
Junction Temperature
Storage Temperature
Value
500
400
6
200
300
500
250
150
-55~+150
Unit
V
V
V
mA
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
I
CBO
I
EBO
h
FE(1)
*
DC current gain
h
FE(2)
*
h
FE(3)
*
h
FE(4)
*
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Emitter input capacitance
V
CE(sat)
*
V
BE(sat)
*
C
ob
C
ib
*
T est conditions
I
C
=100µA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=10µA,I
C
=0
V
CB
=400V,I
E
=0
V
EB
=4V,I
C
=0
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=50mA
V
CE
=10V, I
C
=100mA
I
C
=1mA,I
B
=0.1mA
I
C
=10mA,I
B
=1mA
I
C
=50mA,I
B
=5mA
I
C
=10mA,I
B
=1mA
V
CB
=20V, I
E
=0, f=1MHz
V
BE
=0.5V, I
C
=0, f=1MHz
Min
500
400
6
Typ
Max
Unit
V
V
V
V
(BR)EBO
0.1
0.1
40
50
45
40
0.4
0.5
0.75
0.75
7
130
200
µA
µA
V
V
V
V
pF
pF
*Pulse test: pulse width
≤300μs,
duty cycle≤ 2.0%.
B,May,2012
stm32/stm8
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