TSC5302DCPRO,TSC5302DCPRO pdf中文资料,TSC5302DCPRO引脚图,TSC5302DCPRO电路-Datasheet-电子工程世界

TSC5302DCPRO: 产品描述High Voltage NPN Transistor with Diode; 产品类别分立半导体晶体管; 文件大小230KB，共6页; 制造商Taiwan Semiconductor; 官网地址http://www.taiwansemi.com/

下载文档详细参数选型对比全文预览

TSC5302DCPRO概述

High Voltage NPN Transistor with Diode

	TSC5302DCPRO	TSC5302DCHC5	TSC5302D_10
描述	High Voltage NPN Transistor with Diode	High Voltage NPN Transistor with Diode	High Voltage NPN Transistor with Diode
厂商名称	Taiwan Semiconductor	Taiwan Semiconductor	-
包装说明	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	-
Reach Compliance Code	compli	compli	-
最大集电极电流 (IC)	2 A	2 A	-
集电极-发射极最大电压	400 V	400 V	-
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-
最小直流电流增益 (hFE)	5	5	-
JEDEC-95代码	TO-252	TO-251	-
JESD-30 代码	R-PSSO-G2	R-PSIP-T3	-
元件数量	1	1	-
端子数量	2	3	-
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	-
封装形状	RECTANGULAR	RECTANGULAR	-
封装形式	SMALL OUTLINE	IN-LINE	-
极性/信道类型	NPN	NPN	-
表面贴装	YES	NO	-
端子形式	GULL WING	THROUGH-HOLE	-
端子位置	SINGLE	SINGLE	-
晶体管应用	SWITCHING	SWITCHING	-
晶体管元件材料	SILICON	SILICON	-

器件捷径: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ