PJS50N03
30V N-CHANNEL ENHANCEMENT MODE MOSFET
VOLTAGE
FEATURES
• R
DS(ON)
, V
GS
@10V,I
D
@3.1A< 57 mΩ
• R
DS(ON)
, V
GS
@4.5V,I
D
@2.8A< 94 mΩ
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for DC/DC Converters
• Low Gate Charge
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
30 Volts
CURRENT
2.9 Amperes
MECHANICAL DATA
• Case: SOT-23 6L Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Apporx. Weight : 0.0003 ounces, 0.0084grams
• Marking : N03
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (T
A
=25
O
C unless otherwise noted )
PAR AM E T E R
D r a i n- S o urc e Vo lta g e
Ga te - S o ur c e Vo lta g e
C o nti nuo us D ra i n C urre nt
P uls e d D ra i n C urr e nt
P o we r D i s s i p a ti o n (No te s 1 )
Typ i c a l The r ma l Re s i s ta nc e (No te s 1 )
Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra ture Ra ng e
S te a d y-S ta te
T
A
=2 5
O
C
S te a d y-S ta te
T
A
=2 5
O
C
S YM B OL
V
DS
V
GS
I
D
I
D M
P
D
R
θJ
A
T
J
,T
S TG
L IMIT
30
+2 0
2 .9
16
0 .7
176
-5 5 to + 1 5 0
U N IT S
V
V
A
A
W
O
C /W
O
C
NOTES:
1. Mounted on 7.5cm FR-4 PCB .
2
March 19,2012-REV.00
PAGE . 1
PJS50N03
ELECTRICAL CHARACTERISTICS (T
A
=25
O
C unless otherwise noted )
PAR AME T E R
S ta ti c
D ra i n-S o urc e B re a kd o wn Vo lta g e
Ga te Thre sho ld Vo lta g e
B V
DSS
V
GS (th)
V
GS
= 0 V, I
D
=2 5 0
μA
V
D S
=V
GS
, I
D
= 2 5 0μA
V
GS
= 10V, I
D
= 3.1A
D ra i n-S o urc e On-S ta te Re s i s ta nc e
R
D S (on)
V
GS
= 4.5V, I
D
= 2.8A
Ze ro Ga te Vo lta g e D ra i n C urre nt
Gate -Source Leakage Current
D i o d e F o rwa rd Vo lta g e
Dynamic
Tota l Ga te C ha rg e
Ga te -S o urc e C ha rg e
Ga te -D ra i n C ha rg e
Turn-On D e la y Ti me
Turn-Off D e la y Ti me
Turn-On Ri se Ti me
Turn-Off F a ll Ti me
Inp ut C a p a ci ta nce
Outp ut C a p a ci ta nce
Re ve rse Transfe r C a p a ci ta nce
Q
g
Q
gs
Q
gd
td
on
td
off
t
r
t
f
C
i ss
C
os s
C
rss
V
D S
= 1 5 V, V
GS
=0 V
f=1 .0 MH
Z
V
D S
= 1 5 V, I
D
= 3 .1 A
V
GS
= 10V
-
-
-
-
-
-
-
-
-
-
1 2 .6 3
2 .2 5
2 .6 2
11.6
3 5 .2
1 9 .6
8.2
607
66
59
-
-
-
-
-
ns
-
-
-
-
-
pF
nC
I
D S S
I
GS S
V
SD
V
DS
= 30V, V
GS
=0V
V
GS
= +2 0 V, V
D S
=0 V
I
S
= 1 .2 5 A , V
GS
=0 V
-
-
-
-
40
-
-
0 .9
94
0.5
+1 0 0
1 .2
μA
nA
V
30
1 .0
-
-
2 .0
27
-
3 .0
57
mΩ
V
V
S YMB OL
T E S T C ON D IT ION
MIN .
T YP.
MAX .
U N IT S
V
DS
= 15V , V
GS
= 10V,
R
G
= 6Ω
,
R
L
= 5Ω
March 19,2012-REV.00
PAGE . 2
PJS50N03
RATING
AND CHARACTERISTIC CURVES
I
DS
, Drain-Source Current(A)
1000
16
V
GS
=10V
12
V
GS
=4V
8
V
GS
=5V
C, Capacitance(pF)
900
800
700
600
500
400
300
200
100
0
0
5
10
15
V
GS
=0V
f=1MH
Z
Ciss(pf)
Coss(pf)
Crss(pf)
4
V
GS
=1V,3V
0
0
1
2
3
4
5
20
25
V
DS
, Drain-Source Voltage(V)
Fig.1 Capacitance Variation
V
DS
, Drain-Source Voltage(V)
Fig.2 Drain-Source Current VS Drain-Source Voltage
I
D
, Drain Current(A)
14
12
10
8
6
4
2
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
T
A
=25℃
T
A
=125℃
R
DS
(on), On Resistance(mΩ)
16
100
90
80
70
60
50
40
30
0
2
4
6
8
10
12
14
16
18
20
VGS=4.5V
VGS=10V
V
GS
, Gate-Source Voltage(V)
Fig.3 Drain Current VS Gate-Source Voltage
I
D
, Drain Current(A)
Fig.4 On-Resistance VS Drain Current
500
R
DS
(on), On-Resistance(mΩ)
45
400
300
200
100
0
0
2
4
6
8
10
R
DS
(on)- On-Resistance(mΩ)
I
D
=3.1A
40
35
30
25
20
25
V
GS
=10V
I
D
=3.1A
50
75
100
125
150
V
GS
, Gate-Source Voltage(V)
T
J
, Junction Temperature (℃)
Fig.6 On-Resistance VS Junction Temperature
Fig.5
sistsnce
vs.
On-Resistance VS Gate-Source voltge
Drain current
Fig.5 On-Resistsnce vs. Drain current
March 19,2012-REV.00
PAGE . 3
PJS50N03
RATING
AND CHARACTERISTIC CURVES
V
GS
(
th
), Gate Threshold Voltage(V)
2.2
2.1
2.0
1.9
1.8
1.7
1.6
1.5
25
50
75
100
125
150
I
DS
=-250uA
10.0
I
S
, Source Current(A
)
8.0
6.0
T
J
=150℃
T
J
=125℃
4.0
2.0
0.0
0.2
0.4
0.6
0.8
1
1.2
T
J
=75℃
T
J
=25℃
1.4
1.6
T
J
, Junction Temperature(℃)
V
SD
, Source-Drain Voltage(V)
Fig.8 Body diode forward voltage
Fig.7 Gate Threshoid Voltage VS Junction Temperature
s
March 19,2012-REV.00
PAGE .
4
PJS50N03
MOUNTING PAD LAYOUT
SOT-23 6L
Unit
：
inch(mm)
0.024
(0.60)
0.026
(0.67)
0.037
(0.95)
0.037
(0.95)
ORDER INFORMATION
• Packing information
T/R - 10K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2012
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
March 19,2012-REV.00
0.096
(2.43)
PAGE .
5
ARM技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
