PJE260N02
N-Channel, 20V, 0.78A, Small Signal MOSFET
FEATURES
• Supper high density cell design for extremely low Rds(on)
• Exceptional ON resistance and maximum DC current capability
• Driver: Relays, Solenolds, Lamps, Hammers
• Power supply converters circuit
• Load/Power Switching for potable device
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.013(0.33)
0.009(0.23)
0.052(1.30)
0.043(1.10)
0.067(1.70)
0.059(1.50)
0.044(1.10)
0.035(0.90)
0.067(1.70)
0.059(1.50)
0.024(0.60)
0.019(0.50)
MECHANICAL DATA
Case : SOT-523 plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Approx Weight : 0.002 grams
Marking : 26
0.007(0.17)
0.002(0.07)
0.012(0.30)
0.004(0.10)
Electrical Characteristics (T
A
=25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note1)
Pulsed Drain Current
Maximum Power Dissipation (Note1)
Operating Junction and Storage Temperature Range
Junction-to Ambient Thermal Resistance (Note1)
NOTE : 1.Mounted on min. pad FR-4 PCB.
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J,
T
STG
R
ΘJA
Limit
20
+6
0.78
2.34
0.22
-55 to +150
576
o
Units
V
V
A
A
W
o
C
C/W
April 26.2012-REV.00
PAGE . 1
PJE260N02
Electronlcs Characteristics
Parameter
Static
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Draln Current
Gate-to-source Leakage Current
Gate Threshold Voltage
BV
DSS
I
DSS
I
GSS
V
GS(TH)
V
GS
=0V, I
D
=250μA
V
DS
=20V, V
GS
=0V
V
DS
=0V, V
GS
=+5V
V
GS
=V
DS
, I
D
=250μA
V
GS
=4.5V, I
D
=0.55A
V
GS
=2.5V, I
D
=0.45A
Drain-to-Source On-Resistance
R
DS(ON)
V
GS
=1.8V, I
D
=0.35A
V
GS
=1.5V, I
D
=0.1A
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Riss Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
C
ISS
C
DSS
C
RSS
V
GS
=0V, f=1MHZ,
V
DS
=10V
V
GS
=4.5V, V
DS
=10V,
RL=10Ω, RG=6Ω
V
GS
=-4.5V, V
DS
=-10V,
I
D
=0.55A
-
-
-
-
-
-
-
-
-
-
1.37
0.17
0.29
54
104
864
474
55
19
12
-
-
-
-
-
ns
-
-
-
-
-
pF
nC
V
SD
V
GS
=0V, I
S
=0.35A
-
-
0.5
335
400
0.85
380
1100
1
V
20
-
-
0.45
-
-
-
-
-
0.67
240
270
-
1
+5
1
260
310
mΩ
V
μA
μA
V
Symbol
Conditions
Min.
Typ.
Max.
Units
April 26.2012-REV.00
PAGE . 2
PJE260N02
RATING AND CHARACTERISTIC CURVES
I
DS
-Drain-to-Source Current(A
)
4
2.0
I
DS
-Drain-to-S ource Current(A)
VGS=3Vto5.0V
3
VDS=5V
1.6
1.2
0.8
Ta=75℃
VGS=2.5V
VGS=2V
VGS=1.5V
2
Ta=125℃
0.4
1
Ta=25℃
0.0
0
0.4
0.8
1.2
1.6
2
0
0
0.5
1
1.5
2
V
DS
- Drain-to-Source Voltage(V)
Fig.1 Output Characteristics
V
GS
-Gate-to-Source Voltage(V)
Fig.2 Transfer Characteristics
R
DS
(on)- On-Resistance(mΩ)
400
R
DS
(on)- On-Resistance(mΩ)
VGS=1.8V
VGS=2.5V
2500
2000
1500
1000
500
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
I
D
=0.6A
300
200
VGS=4.5V
100
0
0.2
0.6
1.0
1.4
1.8
I
DS
-Drain-to-Source Current(A)
Fig.3 On-Resistsnce vs. Drain-to-Source Current
V
GS
-Gate-to-Source Voltage(V)
Fig.4 On-Resistsnce vs. Gate-to-Source Voltage
R
DS
(on)- On-Resistance(mΩ)
320
300
280
260
240
220
200
25
50
75
100
125
150
V
GS
(
TH
)Gate Threshold Voltage-(V)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
25
50
75
100
125
150
V
GS
=4.5V ,I
D
=0.55A
ID=250uA
Tj-Junction Temperature (℃)
Tj -Junction Temperature(℃)
Fig.6
Threshoid voltage vs. Temperature
Fig.6 Threshoid Voltage vs. Junction Temperature
Fig.5 On-Resistsnce vs. Junction temperature
Fig.5 On-Resistsnce vs. Drain current
g.3 On-Resistsnce vs. Drain current
April 26.2012-REV.00
PAGE . 3
PJE260N02
RATING AND CHARACTERISTIC CURVES
0.8
60
I
SD
-Source-to-Drain Current(A
)
C-Capacitance(pF)
50
40
30
20
10
0
0
2
C
ISS
C
OSS
0.6
Tj=125℃
Tj=75℃
V
GS
=0V
F=1MH
Z
0.4
0.2
C
RSS
4
6
8
10
Tj=25℃
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0.0
V
DS
-Drain-to-Source Voltage(V)
V
SD
-Source-to-Drain Voltage(V
)
Fg.7 Capacitance
Fig.8 Body Dlode Characterlslcs
April 26.2012-REV.00
PAGE . 4
PJE260N02
MOUNTING PAD LAYOUT
SOT-523
Unit
：
inch(mm)
0.016
(0.40)
0.053
(1.35)
0.019
(0.50)
0.019
(0.50)
ORDER INFORMATION
• Packing information
T/R - 4K per 7" plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2012
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
April 26.2012-REV.00
0.017
(0.45)
PAGE . 5
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