65V N-Channel
MOSFET
GSFN6905
D
Main Product Characteristics
V
(BR)DSS
R
DS(ON)
I
D
65V
14mΩ
40A
S
SS
G
D
D
D
D
G
S
PPAK3X3
Schematic Diagram
Features and Benefits
Advanced MOSFET process technology
Ideal for high efficiency switched mode power supplies
Low on-resistance with low gate charge
Fast switching and reverse body recovery
Description
The
GSFN6905
utilizes the latest techniques to achieve high cell density and low on-resistance.
These features make this device extremely efficient and reliable for use in high efficiency switch mode
power supply and a wide variety of other applications.
Absolute Maximum Ratings
(T
C
=25°C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous (T
C
=25˚C)
Drain Current – Continuous (T
C
=100˚C)
Drain Current – Pulsed
1
Single Pulse Avalanche Energy
2
Single Pulse Avalanched Current
2
Power Dissipation (T
C
=25˚C)
Power Dissipation – Derate above 25˚C
Storage Temperature Range
Operating Junction Temperature Range
unless otherwise specified)
Rating
65
±20
40
25.3
160
61
35
52
0.42
-55 to +150
-55 to +150
Unit
V
V
A
A
A
mJ
A
W
W/˚C
˚C
˚C
Symbol
V
DS
V
GS
I
D
I
DM
E
AS
I
AS
P
D
T
STG
T
J
Thermal Characteristics
Parameter
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
Symbol
R
θJA
R
θJC
1/5
Typ.
---
---
Max.
62
2.4
Unit
˚C/W
˚C/W
65V N-Channel
MOSFET
GSFN6905
Electrical Characteristics
(T
J
=25°C
Parameter
Symbol
unless otherwise specified)
Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
BV
DSS
V
GS
=0V, I
D
=250uA
65
---
---
---
---
---
0.03
---
---
---
---
---
1
10
±100
V
V/°C
uA
uA
nA
△BV
DSS
/
△T
J
Reference to 25°C, I
D
=1mA
I
DSS
I
GSS
V
DS
=60V, V
GS
=0V, T
J
=25°C
V
DS
=48V, V
GS
=0V, T
J
=125°C
V
GS
=±20V,
V
DS
=0V
On Characteristics
Static Drain-Source On-Resistance
3
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Forward Transconductance
R
DS(ON)
V
GS(th)
△V
GS(th)
gfs
V
DS
=10V, I
D
=6A
V
GS
=10V, I
D
=10A
V
GS
=4.5V, I
D
=8A
V
GS
=V
DS
, I
D
=250uA
---
---
1.2
---
---
12
15
1.6
-4
11.7
14
18.5
2.2
---
---
mΩ
mΩ
V
mV/°C
S
Dynamic and Switching Characteristics
Total Gate Charge
3,
4
Q
g
Q
gs
Q
gd
4
---
V
DS
=30V, V
GS
=10V, I
D
=10A
---
---
---
V
DD
=15V, V
GS
=10V, R
G
=6Ω,
I
D
=1A
---
---
---
---
V
DS
=25V, V
GS
=0V, F=1MHz
---
---
V
GS
=0V, V
DS
=0V, F=1MHz
---
39.2
5.9
8.8
9.6
28.2
45.3
10.9
2100
165
80
1.6
59
9
14
18
54
86
21
3050
240
120
3.2
Ω
pF
nS
nC
Gate-Source Charge
3, 4
Gate-Drain Charge
3, 4
Turn-On Delay Time
3,
Rise Time
3,
4
4
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
R
g
Turn-Off Delay Time
3,
Fall Time
3,
4
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Drain-Source Diode Characteristics and Maximum Ratings
Continuous Source Current
Pulsed Source Current
3
Diode Forward Voltage
3
I
S
I
SM
V
SD
V
G
=V
D
=0V, Force Current
V
GS
=0V, I
S
=1A, T
J
=25°C
---
---
---
---
---
---
40
80
1
A
A
V
Note:
1. Repetitive Rating: Pulsed width limited by maximum junction temperature.
2. V
DD
=25V, V
GS
=10V, L=0.1mH, I
AS
=35A, R
G
=25
,
Starting T
J
=25°C.
3. The data tested by pulsed, pulse width
≦
300uS, duty cycle
≦
2%.
4. Essentially independent of operating temperature.
2/5
V N-Channel MOSFET
GSFN
0
Typical Electrical and Thermal Characteristic Curves
I
D
, Continuous Drain Current (A)
Normalized On Resistance (m)
T
C
, Case Temperature (°C)
Fig.
Normalized Gate Threshold Voltage (V)
Continuous Drain Current vs. T
C
Fig.
V
GS
, Gate to Source Voltage (V)
T
J
, Junction Temperature (°C)
Normali ed R
DS ON
vs. T
T
J
, Junction Temperature (°C)
Fig.3 Normali ed V
th
vs. T
Normalized Thermal Response (R
ΘJC
)
Fig.4
I
D ,
Continuous Drain Current (A)
Q
g
, Gate Charge (nC)
ate Charge
aveform
Fig.
Square Wave Pulse Duration (S)
Normali ed Transient Response
35
V
DS
, Drain to Source Voltage (V)
Fig.
Maximum Safe Operation Area
65V N-Channel
MOSFET
GSFN6905
Typical Electrical and Thermal Characteristic Curves
V
DS
90%
BV
DSS
E
AS
=
1
L x I
AS2
x
2
BV
DSS
BV
DSS
-V
DD
V
DD
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
I
AS
V
GS
Fig.8 E
AS
Waveform
Fig.7 Switching Time Waveform
4/5
65V N-Channel
MOSFET
GSFN6905
Package Outline Dimensions
PPAK3X3
Symbol
A
b
c
D
D1
D2
D3
E
E1
E2
e
H
L
L1
θ
M
www.goodarksemi.com
Dimensions In Millimeters
Min
Max
0.700
0.800
0.250
0.350
0.100
0.250
3.250
3.450
3.000
3.200
1.780
1.980
0.130 REF
3.200
3.400
3.000
3.200
2.390
2.590
0.650 BSC
0.300
0.500
0.300
0.500
0.130 REF
0°
12°
0.150 REF
5/5
Dimensions In Inches
Min
Max
0.028
0.031
0.010
0.013
0.004
0.009
0.128
0.135
0.119
0.125
0.070
0.077
0.005 REF
0.126
0.133
0.119
0.125
0.094
0.102
0.026 BSC
0.011
0.019
0.011
0.019
0.005 REF
0°
12°
0.006 REF
Doc.USGSFN6905xSP2.0
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