Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | NTE |
包装说明 | , |
Reach Compliance Code | unknown |
配置 | Single |
最大漏极电流 (Abs) (ID) | 0.25 A |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码 | e0 |
工作模式 | ENHANCEMENT MODE |
极性/信道类型 | N-CHANNEL |
最大功率耗散 (Abs) | 0.6 W |
表面贴装 | NO |
端子面层 | Tin/Lead (Sn/Pb) |
ECG492 | ECG468 | ECG469 | ECG465 | ECG466 | ECG464 | ECG491 | |
---|---|---|---|---|---|---|---|
描述 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Transistor, | Transistor, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Transistor, | Transistor, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
厂商名称 | NTE | NTE | NTE | NTE | NTE | NTE | NTE |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | JUNCTION | JUNCTION | METAL-OXIDE SEMICONDUCTOR | JUNCTION | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | P-CHANNEL | N-CHANNEL |
最大功率耗散 (Abs) | 0.6 W | 0.36 W | 0.36 W | 0.3 W | 0.36 W | 0.3 W | 0.83 W |
表面贴装 | NO | NO | NO | NO | NO | NO | NO |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
配置 | Single | - | - | Single | - | Single | Single |
最大漏极电流 (Abs) (ID) | 0.25 A | - | - | 0.003 A | - | 0.003 A | 0.28 A |
工作模式 | ENHANCEMENT MODE | - | - | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE |
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